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onsemi NVMFD027N10MCL Dual N-Channel Power MOSFET

onsemi NVMFD027N10MCL Dual N-Channel Power MOSFET is a 100V, 28A, 26mΩ Automotive Power MOSFET designed for compact and efficient designs. The AEC-Q101-qualified and PPAP-capable device is housed in a 5mm x 6mm flat lead package with a wettable flank option available for enhanced optical inspection. The onsemi NVMFD027N10MCL MOSFET features high thermal performance and low RDS(on) to minimize conduction losses.

Features

  • Small footprint (5mm x 6mm) for compact design
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • AEC-Q101 qualified and PPAP capable
  • Pb-free, halogen-free/BFR-free, beryllium-free, and RoHS compliant

Applications

  • 48V systems
  • Switching power supplies
  • Power switches (high-side driver, low-side driver, H-bridges, etc.)

Specifications

  • 28A maximum continuous drain current
  • 26mΩ at 10V and 35mΩ at 4.5V RDS(ON) maximum
  • 100V drain-to-source voltage
  • ±20V gate-to-source voltage
  • 115A pulsed drain current
  • -55°C to +175°C operating junction and storage temperature range

Typical Application

Application Circuit Diagram - onsemi NVMFD027N10MCL Dual N-Channel Power MOSFET
Paskelbta: 2023-12-28 | Atnaujinta: 2024-05-29