onsemi NTMFS3D0N08X Single N-Channel Power MOSFET
onsemi NTMFS3D0N08X Single N-Channel Power MOSFET is an 80V T10 standard gate MOSFET ideal for Cloud power, 5G Telecom, and other PSU applications, as well as DC/DC and industrial applications. NTMFS3D0N08X provides better performance with improved system efficiency and high power density with below-performance features. This MOSFET provides improved overall efficiency, improved switching losses, reduced ringing/overshoot/noise, and improved Avalanche ruggedness in fast-switching applications.
Features
- Low QRR, soft recovery body diode
- Low RDS(on) to minimize conduction losses
- Low QG and capacitance to minimize driver losses
- Pb-free, Halogen-free/BFR-free, and RoHS-compliant
Applications
- Synchronous Rectification (SR) in DC-DC and AC-DC
- Primary switches in isolated DC-DC converters
- Motor drives
Specifications
- 80V maximum drain-to-source voltage
- ±20V maximum gate-to-source voltage
- 109A to 154A maximum continuous drain current range
- 133W maximum power dissipation
- 634A maximum pulsed drain/source current
- 201A maximum body diode source current
- 140mJ maximum single pulse avalanche energy
- 100nA maximum gate-to-source leakage current
- 2.6mΩ to 5.2mΩ maximum drain-to-source on resistance range
- 2.4V to 3.6V gate threshold voltage range
- 115S typical forward transconductance
- 66nC typical output charge
- 28nC to 45nC typical total gate charge range
- 10nC typical threshold gate charge
- 15nC typical gate-to-source charge
- 7nC typical gate-to-drain charge
- 4.7V typical gate plateau voltage
- 0.8Ω typical gate resistance
- Typical switching times
- 24ns turn-on delay
- 8ns rise
- 35ns turn-off delay
- 6ns fall
- Typical capacitances
- 3200pF input
- 930pF output
- 14pF reverse transfer
- Thermal resistance
- 1.12°C/W junction-to-case
- 39°C/W junction-to-ambient
- -55°C to +175°C operating junction temperature range
Paskelbta: 2024-02-19
| Atnaujinta: 2024-05-01