Grįžti į onsemi

onsemi NTMFS005P03P8Z Single P-Channel Power MOSFET

onsemi NTMFS005P03P8Z Single P-Channel Power MOSFET is ideal for power load switches, battery management, and protection (reverse current, over-voltage, and reverse negative voltage). Operating within a -55°C to +150°C junction temperature range, the NTMFS005P03P8Z delivers -30V drain-to-source voltage, a 2.7mΩ on-resistance at 10V, and a 164A drain/standby current. The onsemi NTMFS005P03P8Z is packaged in a 5mm x 6mm SO8-FL package utilizing advanced package technology for space saving and excellent thermal conduction.

Features

  • Ultra-low RDS(on) to improve system efficiency
  • Advanced package technology for space saving and excellent thermal conduction
  • 5mm x 6mm, SO8-FL package
  • Pb-free, Halogen-free/BFR-free, and RoHS-compliant

Applications

  • Protections
    • Reverse current
    • Over-voltage
    • Reverse negative voltage
  • Power load switches
  • Battery management

Specifications

  • -30V maximum drain-to-source voltage
  • ±25V maximum gate-to-source voltage
  • -11A to -164A maximum continuous drain current range
  • 0.9W to 104W maximum power dissipation range
  • -597A maximum pulsed drain current
  • -1.0µA maximum zero gate voltage drain current
  • ±10µA maximum gate-to-source leakage current
  • 165.8mJ maximum single pulse drain-to-source avalanche energy
  • 2.7mΩ to 4.4mΩ maximum drain-to-source on resistance range
  • 87S typical forward transconductance
  • 183nC typical total gate charge
  • 57ns typical reverse recovery time
  • 34ns typical charge time
  • 23ns typical discharge time
  • 77nC typical reverse recovery charge
  • Typical capacitance
    • 7880pF input
    • 2630pF output
    • 2550pF reverse transfer
  • Maximum steady-state thermal resistance
    • 1.2°C/W junction-to-case
    • 40°C/W to 137°C/W junction-to-ambient range
  • -55°C to +150°C operating junction temperature range
Paskelbta: 2024-02-19 | Atnaujinta: 2024-03-05