onsemi FAD1100-F085 Ignition Gate Drive IC

onsemi FAD1100-F085 Ignition Gate Drive IC is engineered to directly drive an ignition IGBT and regulate both the coil current and the resulting spark event. Coil current is managed through the device’s input pin. When this pin is driven high, the FAD1100‑F085 activates the IGBT and initiates the coil‑charging process. The device draws an input current (IIN) determined by the programmed value on the RA line.

To ensure reliable operation, an internal spike filter suppresses input pulses shorter than 13 microseconds. The device also incorporates a programmable Max Dwell timer that disables the IGBT if the input signal remains active beyond the preset interval. This dwell period can be adjusted using an external capacitor on the CSSD pin. When the dwell limit is exceeded, the onsemi FAD1100‑F085 enters Soft‑Shut‑Down mode, gradually reducing the gate drive to the IGBT. This controlled decrease in collector current safely discharges the coil and prevents an unintended spark event. During soft shutdown, the device ignores any further input transitions until the sequence is complete. Additionally, the FAD1100‑F085 enforces collector‑current limiting (IC[lim]) during coil charging, using a sense resistor in the IGBT’s emitter path to generate a signal for the VSENSE pin.

Features

  • 5V output level optimized to drive ignition IGBTs
  • Programmable input current through RA line with 13s input spike filter
  • IGBT current sense and current limit
  • Configurable maximum dwell time with soft shutdown protection
  • Operation from ignition on battery line down to 6V
  • 28V battery capable for jump start
  • Overvoltage protection
  • ±1.5V ground shift tolerance
  • SOIC8 package (case 751EB) or die sales
  • AEC-Q100 Grade 0 qualified
  • Lead-free and RoHS-compliant

Applications

  • Designed specifically for driving ignition IGBTs in automotive ignition systems
  • Suitable for “switch‑on‑coil” ignition applications, where compact size and high system performance are required
  • Used to control the coil current and spark event in ignition coil driver circuits
  • Applicable in systems requiring programmable dwell time, soft shutdown, and current limiting for ignition control

Specifications

  • 12A typical operating collector (coil) operating current
  • 1.5mH typical operating coil primary inductance
  • 0.4Ω typical operating coil primary resistance (+25°C)
  • 2Ω typical operating load resistance (for delay time measurements)
  • 0.625W maximum continuous power dissipation at TA = +25°C
  • Power supply
    • 4V to 28V coil switching function operating voltage range
    • 6V to 28V operating voltage for all functions
    • 5mA maximum supply current
    • 33V to 40V battery clamp voltage range
  • Sense pin
    • 170mV to 215mV sense voltage threshold range at current limit
    • 70µA maximum current sourced out of VSENSE pin
    • 13µs typical input spike filter
    • 15µs typical turn-on/-off delay time
  • Input control
    • 1.2V minimum input low voltage
    • 2.0V maximum input high voltage
    • 0.5mA (RA = 200kΩ) to 15mA (RA = 5.2kΩ) input current range
  • Gate output voltage
    • 4.5V to 6V maximum range with a 16KΩ pulldown resistor
    • 0.0V to 0.4V minimum range (0mA < IGATE < 0.4mA at TA = +25°C)
  • Diagnostic protections and functions
    • 5.2kΩ to 200kΩ resistor range for input reference current
    • 2.3nF minimum dwell time capacitor
    • 30ms to 60ms maximum dwell time range
    • 0.7A/ms to 2.5A/ms soft-shut-down slew rate range
    • 0.75µA to 1.25µA CSSD pin current range for TDMAX
  • 200°C/W maximum junction-to-ambient thermal resistance
  • -40°C to +150°C maximum ambient operating temperature range
  • +260°C maximum lead soldering temperature
  • 2kV ESD voltage capability (HBM)

Typical Application Schematic

Schematic - onsemi FAD1100-F085 Ignition Gate Drive IC

Simplified Block Diagram

Block Diagram - onsemi FAD1100-F085 Ignition Gate Drive IC
Paskelbta: 2026-02-25 | Atnaujinta: 2026-03-03