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onsemi AFGBG70T65SQDC N-Channel Field Stop IV IGBT

onsemi AFGBG70T65SQDC N-Channel Field Stop IV High Speed IGBT uses the novel field stop 4th generation IGBT technology and Generation 1.5 SiC Schottky Diode technology. This 650V collector-to-emitter (VCES) rated IGBT comes in a D2PAK7 package. It is rated at 1.54V collector-to-emitter saturation voltage (VCE(SAT)) and a collector current (IC) of 70A. The onsemi AFGBG70T65SQDC offers optimal performance with both low conduction and switching losses, enabling high efficiency in various applications.

Features

  • +175°C maximum junction temperature (TJ)
  • Positive temperature coefficient for easy parallel operation
  • High current capability
  • Low 1.54V (typ.) saturation voltage (VCE(SAT)) at IC = 70A
  • 100% of the parts are tested for ILM
  • Fast switching
  • Tight parameter distribution
  • No reverse recovery and no forward recovery
  • AEC-Q101 qualified and PPAP capable

Applications

  • Automotive HEVEV onboard chargers
  • Automotive HEVEV DC-DC converters
  • Totem pole bridgeless PFCs

Specifications

  • 650V collector-to-emitter voltage (VCES)
  • ±20V gate-to-emitter voltage (VGES)
  • ±30V transient gate-to-emitter voltage (VGES)
  • Collector current (IC) of 75A (TC = +25°C), 70A (TC = +100°C)
  • Power dissipation (PD) of 617W (TC = +25°C), 309W (TC = +100°C)
  • 280A pulsed collector current (ICM) (TC = +25°C, tp = 10µs)
  • Diode forward current (IF) of 35A (TC = +25°C), 20A (TC = +100°C)
  • 80A pulsed diode maximum forward current (IFM) (TC = +25°C, tp = 10µs)
  • -55°C to +175°C operating junction/storage temperature range (TJ, Tstg)
  • +260°C lead temperature for soldering purposes (TL)

Circuit Diagram

Schematic - onsemi AFGBG70T65SQDC N-Channel Field Stop IV IGBT
Paskelbta: 2025-09-30 | Atnaujinta: 2025-10-13