Grįžti į onsemi

onsemi NVMFD6H846NL Dual N-Channel Power MOSFET

onsemi NVMFD6H846NL Dual N-Channel Power MOSFET is designed for compact and efficient designs with high thermal performance. This onsemi MOSFET features low RDS(on) to minimize conduction losses and low QG/capacitance to minimize driver losses. The NVMFD6H846NL MOSFET offers a small footprint with 5mm x 6mm dimensions. This MOSFET is AEC-Q101 Qualified and PPAP capable. Typical applications include reverse battery protection, power switches (high-side driver, low-side driver, and H-bridges), and switching power supplies.

Features

  • Low drain-to-source resistance (RDS(on)) to minimize conduction losses
    • 15mΩ at 10V
    • 19mΩ at 4.5V
  • 31A maximum continuous drain current (ID)
  • 80V drain-to-source voltage (V(BR)DSS)
  • Low QG and capacitance to minimize driver losses
  • AEC-Q101 qualified and PPAP capable
  • Small footprint with 5mm x 6mm dimensions for compact design

Additional Resource

Paskelbta: 2020-09-18 | Atnaujinta: 2024-06-04