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onsemi NTBS9D0N10MC Single N-Channel MOSFET

onsemi NTBS9D0N10MC Single N-Channel MOSFET offers low drain-to-source ON-resistance RDS(ON) that minimizes conduction losses. This MOSFET provides low total gate charge (QG) and capacitance that minimizes driver losses. onsemi NTBS9D0N10MC MOSFET lowers switching noise/electromagnetic interference (EMI). This MOSFET features 100V drain-to-source voltage (VDSS) and 60A maximum continuous drain current (ID). Typical applications include power tools, battery-operated vacuums, unmanned aerial vehicles (UAVs)/drones, material handling, battery management systems (BMS)/storage, and home automation.

Features

  • 9mΩ (max) RDS(on) at 10V minimizes conduction losses
  • Optimized switching performance
  • Low QG and capacitance to minimize driver losses
  • Lowers switching noise/EMI
  • 60A ID (max)
  • 100V VDSS

Applications

  • Power tools
  • Battery-operated vacuums
  • UAV/drones
  • Material handling
  • BMS/storage
  • Home automation

Performance Graphs

Performance Graph - onsemi NTBS9D0N10MC Single N-Channel MOSFET

Additional Resource

Paskelbta: 2020-09-10 | Atnaujinta: 2024-06-11