NXP Semiconductors A5G35S008N Evaluation Board

NXP Semiconductors A5G35S008N Evaluation Board is used with the A5G35S008N Airfast RF Power GaN Transistor. The board is a driver for 32T discrete mMIMO solutions. It has a 48V GaN discrete transistor, 3300-4000MHz, and a 40dBm peak (10W).

Features

  • 48V GaN discrete transistor
  • At 13dB OBO
    • 27dBm avg. (0.5W)
    • 21dB gain
    • 18% drain efficiency (Class AB)
  • 3300-4000MHz
  • 40dBm peak (10W)
  • DFN 4.5 x 4 over-molded plastic package
  • Single-ended, input pre-matched, output unmatched

Typical Lineup

NXP Semiconductors A5G35S008N Evaluation Board
Paskelbta: 2022-04-26 | Atnaujinta: 2023-01-12