NXP Semiconductors A5G26H110N Evaluation Board
NXP Semiconductors A5G26H110N Evaluation Board is used with the A5G26H110N Airfast RF Power GaN Transistor. The board is designed for 32T, 320W radio units (10W avg. at each antenna). Its target band is n41, and it offers 2x more power in the same package as 64T solutions.
Features
- 48V GaN discrete transistor
- At 8.7dB OBO
- 41.8dBm avg. (15W)
- 16dB gain
- 58% drain efficiency (Doherty)
- 2496-2690MHz
- 50.5dBm peak (110W)
- DFN 7 x 6.5 over-molded plastic package
- Asymmetric – 1.9:1 ratio, input and output pre-matched
Typical Lineup
Paskelbta: 2022-04-26
| Atnaujinta: 2022-06-24