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MACOM CMPA0530002S GaN HEMT

MACOM CMPA0530002S Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) is specially designed for high efficiency, high gain, and wide bandwidth capabilities. The MACOM CMPA0530002S operates on a 28V rail while encased in a 3mm x 4mm, surface-mount, dual-flat-no-lead (DFN) package. The transistor can operate below 28V to as low as 20V VDD under reduced power, maintaining high gain and efficiency.

Features

  • 18dB small signal gain
  • 2.9W typical PSAT
  • Operation up to 28V
  • High breakdown voltage
  • High-temperature operation
  • 0.118" x 0.157" x 0.033" dimensions

Applications

  • Civil and military communications
  • Broadband amplifiers
  • Electronic warfare
  • Industrial scientific and medical
  • Radar

Development Tool

MACOM CMPA0530002S-AMP1 Application Circuit

Test board with a CMPA0530002S GaN HEMT installed, facilitates the evaluation of the CMPA0530002S.

Learn Moreabout MACOM CMPA0530002S-AMP1 Application Circuit View Productsrelated to MACOM CMPA0530002S-AMP1 Application Circuit

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Learn Moreabout MACOM CGHV60040D & CGHV60075D5 6GHz GaN HEMTs View Productsrelated to MACOM CGHV60040D & CGHV60075D5 6GHz GaN HEMTs
Paskelbta: 2021-06-15 | Atnaujinta: 2024-01-19