IXYS IXSJxN120R1K 1200V SiC Power MOSFETs
IXYS IXSJxN120R1K 1200V SiC Power MOSFETs feature up to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on). These IXYS SiC power MOSFETs offer a low gate charge of 79nC (IXSJ43N120R1K) or 155nC (IXS80N120R1K) and a low input capacitance of 2453pF (IXSJ43N120R1K) or 4556pF (IXSJ80N120R1K). The IXSJxN120R1K provides a 15V to 18V flexible gate voltage range and a recommended turn-off gate voltage of 0V. Applications include electric vehicle (EV) charging infrastructures, solar inverters, switch-mode power supplies, uninterruptible power supplies, motor drives, and more.
Features
- Up to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on)
- Low gate charge
- 79nC (IXSJ43N120R1K)
- 155nC (IXS80N120R1K)
- 15V to 18V flexible gate voltage range
- Low input capacitance
- 2453pF (IXSJ43N120R1K)
- 4556pF (IXSJ80N120R1K)
- 0V recommended turn-off gate voltage
Applications
- EV charging infrastructures
- Solar inverters
- Switch-mode power supplies
- Uninterruptible power supplies
- Motor drives
- DC/DC converters
- Battery chargers
- Induction heating
- High-frequency applications
Specifications
- -40°C to +150°C virtual junction temperature range
- Drain currents
- 46A (IXSJ43N120R1K)
- 80A (IXSJ80N120R1K)
- RDS(on) typical
- 18mΩ (IXSJ80N120R1K)
- 36mΩ (IXSJ43N120R1K)
Datasheets
Pinout Diagram (ISO247-4L)
Related MOSFETs
Littelfuse IXSJxN120R1 1200V SiC galios MOSFET
High-performance devices designed for demanding power conversion applications.
Paskelbta: 2025-08-06
| Atnaujinta: 2025-08-27