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EPC EPC2302 Enhancement-Mode GaN Power Transistor

Efficient Power Conversion (EPC) EPC2302 Enhancement-Mode Gallium Nitride (GaN) Power Transistor is engineered for high-frequency DC-DC applications to/from 40V to 60V and 48V BLDC motor drives. This eGaN® transistor features 1.8mΩ maximum drain-source on resistance RDS(on) and 100V drain-source breakdown voltage (continuous) VDS in a low inductance 3mm x 5mm QFN package. The package has side-wettable flanks and an exposed top for excellent thermal management. The thermal resistance to the case top is ~0.2°C/W, offering excellent thermal behavior and easy cooling. The EPC2302 enhancement-mode power transistor from EPC enables efficient operation in many topologies while improving efficiency and saving space.

Features

  • Ultra-high efficiency - lower conduction and switching losses
  • No reverse recovery
  • Ultra-low QG
  • Excellent thermal performance
  • Small footprint for higher power density
  • Enhanced thermal-max package
  • Application notes
    • Easy-to-use and reliable gate, gate drive ON = 5V typical, OFF = 0V (negative voltage not needed)
    • Top of FET is electrically connected to source

Applications

  • AC-DC chargers, SMPS, adapters, and power supplies
  • High frequency DC-DC conversion input (buck, boost, buck-boost, and LLC)
  • Motor drives
  • High-power density DC-DC modules
  • Synchronous rectification
  • Solar maximum power point tracking (MPPT)

Specifications

  • 100VDS (continuous)
  • 1.4mΩ typical and 1.8mΩ maximum RDS(on)
  • 3mm x 5mm QFN package
  • Exposed top for top-side thermal management
  • Moisture sensitivity level (MSL) 2
  • Thermally enhanced package with exposed top (Rthjc = 0.2°/W) and wettable flank

Characteristics

Performance Graph - EPC EPC2302 Enhancement-Mode GaN Power Transistor
Paskelbta: 2026-02-13 | Atnaujinta: 2026-02-13