Grįžti į Diodes Incorporated

Diodes Incorporated DMTH6004 N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMTH6004 N-channel Enhance Mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance. The DMTH6004 MOSFET provides a BVDSS voltage of 60V and is rated to +175°C. This MOSFET from Diodes Incorporated is ideal for high-efficiency power management applications such as a primary switch in isolated DC-DC, synchronous rectifier, and load switch.

Features

  • Rated to +175°C
  • 100% unclamped inductive switching ensures a reliable and robust end application
  • Low RDS(ON) minimizes power losses
  • Low Qg minimizes switching losses
  • Lead-free finish and RoHS compliant
  • Halogen and Antimony free green device
  • AEC-Q101 qualified standards for high-reliability

Specifications

  • Materials
    • POWERDI® 5060-8 case
    • Molded plastic and green molding compound case
    • 94V-0 UL flammability classification rating
    • Level 1 per J-STD-020 moisture sensitivity
    • Matte tin annealed over copper lead frame terminal finish
    • 0.097gm weight (approximate)
  • -55°C to +175°C operating and storage temperature range
  • Ratings
    • 60V drain-source voltage
    • ±20V gate-source voltage
    • 100A forward current
    • 120A pulsed drain current
    • 40A avalanche current
    • 160mJ avalanche energy
Paskelbta: 2016-05-02 | Atnaujinta: 2022-03-11