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Diodes Incorporated DXTN80x NPN Bipolar Transistors

Diodes Incorporated DXTN80x NPN Bipolar Transistors offer a small form factor, thermally efficient PowerDI® 3333-8 package, allowing higher-density end products. The devices supply a >30V, 60V, or 100V collector-emitter voltage and a >8V emitter-base voltage. The DXTN80x is ideal for high-temperature environments, with a temperature rating of +175°C. The Diodes Inc. DXTN80x NPN bipolar transistors are excellent for motors, solenoids, relays, and actuator driver controls.

Features

  • BVCEO >30V, 60V, or 100V
  • BVEBO >8V
  • Continuous current IC from 5.5A to 10A
  • Peak pulse current ICM to 10A to 20A
  • Ultra-low saturation voltage VCE(sat) <30mV at 1A, <40mV at 1A, or <45mV at 1A
  • High Current RCE(sat) = 12mΩ, 16mΩ, or 23mΩ typical
  • Small form factor thermally efficient package enables higher density end products
  • Wettable flank for improved optical inspection
  • Rated to +175°C - ideal for high-temperature environments
  • Lead-free finish; RoHS compliant
  • Halogen and antimony-free - “Green” device

Applications

  • MOSFET and IGBT gate drivers
  • Load switches
  • Low-voltage regulation
  • DC to DC converters
  • Motors, solenoids, relays, and actuator driver controls

Specifications

  • PowerDI 3333-8 package
  • Package material of molded plastic, “Green” molding compound, UL flammability rating 94V-0
  • Moisture sensitivity of Level 1 per J-STD-020
  • Finish - matte tin terminals, solderable per MIL-STD-202, Method 208

Additional Resources

Associated Bipolar Transistors

Diodes Incorporated DXTP80x PNP Bipolar Transistors

PNP Bipolar Transistors offer a small form factor, thermally efficient PowerDI 3333-8 package.

Learn Moreabout Diodes Incorporated DXTP80x PNP Bipolar Transistors View Productsrelated to Diodes Incorporated DXTP80x PNP Bipolar Transistors

Package Style

Location Circuit - Diodes Incorporated DXTN80x NPN Bipolar Transistors
Paskelbta: 2025-09-09 | Atnaujinta: 2025-09-17