Diodes Incorporated DXTN07x Bipolar Junction Transistors (BJTs)
Diodes Incorporated DXTN07x Bipolar Junction Transistors (BJTs) are offered in smaller, thermally efficient PowerDI®3333-8 packages. These Diodes Incorporated transistors are in a PowerDI3333 surface mount 3.3mm x 3.3mm x 0.8mm package. The package occupies 70% less printed circuit board (PCB) space than the traditional small-outline transistor (SOT223). PowerDI3333 packages increase PCB throughput with wettable flanks, which help facilitate high-speed, automatic optical inspection (AOI) of solder joints. These NPN and PNP transistors can perform functions such as linear or LDO regulation, gate driving of MOSFETs or insulated-gate bipolar transistors (IGBT), and load switches across industrial and consumer applications.
Features
- 3.3mm x 3.3mm x 0.8mm thermally efficient packaging
- Lead-free and fully RoHS compliant
- Wettable flank for improved optical inspection
- -100V to 100V breakdown voltage, collector-emitter, base open
- -3A to 3A high continuous current
- Rated to +175°C, ideal for a high-temperature environment
- Low saturation voltage VCE(sat) -400mV to 300mV at -1A
View Results ( 9 ) Page
| Dalies Numeris | Duomenų Lapas | Tranzistoriaus poliškumas | Collector- Base Voltage VCBO | Kolektoriaus ir Emiterio Stoties Įtampa | Gain Juostos pločio produktas fT |
|---|---|---|---|---|---|
| DXTP07040CFG-7 |  |
PNP | 50 V | 200 mV | 100 MHz |
| DXTP07100BFG-7 | |
PNP | 120 V | 260 mV | 140 MHz |
| DXTN07025BFG-7 | |
NPN | 35 V | 180 mV | 240 MHz |
| DXTN07060BFG-7 | |
NPN | 80 V | 200 mV | 175 MHz |
| DXTN07100BFG-7 | |
NPN | 120 V | 150 mV | 175 MHz |
| DXTP07040CFGQ-7 | |
PNP | 50 V | 200 mV | 100 MHz |
| DXTP07060BFG-7 | |
PNP | 80 V | 206 mV | 140 MHz |
| DXTN07045DFG-7 | |
NPN | 45 V | 140 mV | 150 MHz |
| DXTP07025BFG-7 | |
PNP | 35 V | 164 mV | 160 MHz |
Paskelbta: 2019-03-07
| Atnaujinta: 2023-07-17