Coherent High-Speed Indium Phosphide (InP) Photodiodes

Coherent High-Speed Indium Phosphide (InP) Photodiodes are designed for use in next-generation 800G and 1.6T transceivers with 200Gb/s PAM4 optical lanes. These photodiodes offer both singlet and 1x4 array configurations with integrated lenses. These RoHS-compliant devices provide efficient optical coupling and compatibility with all major four-channel and eight-channel transimpedance amplifiers (TIA). The flip-chip pad configurations are engineered to meet the demanding requirements of longwave fiber-optic communication systems, especially data center applications. Coherent High-Speed Indium Phosphide (InP) Photodiodes feature a wide optical response from 900nm to 1650nm, high responsivity at 1310nm, low capacitance of 50fF, and low dark current.

Features

  • For use in next-generation of 800G and 1.6T transceivers with 200Gb/s PAM4 optical lanes
  • Singlet and 1x4 array configurations with integrated lenses
  • Efficient optical coupling
  • Wide optical response
  • High responsivity
  • Low capacitance
  • Low dark current
  • Flip-chip pad configurations
  • Compatibility with all major 4-channel and 8-channel TIA
  • High bandwidth
  • RoHS compliant

Applications

  • Longwave fiber-optic communication systems
  • Data centers

Specifications

  • 900nm to 1650nm optical response
  • 1310nm responsivity
  • 3dB bandwidth >50GHz
  • 50fF capacitance
Paskelbta: 2024-11-21 | Atnaujinta: 2025-01-07