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Ketvirtosios kartos 600 V E serijos galios MOSFET „PowerPAK”® 8 x 8LR pakuotėje.

Features TrenchFET^® Gen V power technology ideal for synchronous rectification and automation.

TrenchFET® Gen V power MOSFET utilizing source flip technology that enhances thermal performance.

Evaluate the SIP32433A, SIP32433B, SIP32434A, and SIP32434B single-channel eFuse load switches.

Integrate multiple control and protection features.

Integrate multiple control and protection features.

AEC-Q101-qualified fast body diode MOSFET with reduced t_rr, Q_rr, and I_RRM, and an ultra-low FOM.

Increases power conversion efficiency with a very low R_DS x Q_g figure-of-merit (FOM).

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