It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

FM28V020-TGTR

Name: Infineon FM28V020-TGTR
Brand: Infineon Technologies
SKU: 877-FM28V020-TGTR
Price: 10.85 EUR
Availability: OutOfStock

Mouser No:

877-FM28V020-TGTR

Mfr. No:

FM28V020-TGTR

Mfr.:

Infineon Technologies

Description:

F-RAM 256Kb FRAM 2.0V-3.6V FRAM

Datasheet:

FM28V020-TGTR Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies FM28V020-TGTR

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	F-RAM
RoHS:
Memory Size:	256 kbit
Interface Type:	Parallel
Organisation:	32 k x 8
Package/Case:	TSOP-32
Access Time:	70 ns
Supply Voltage - Min:	2 V
Supply Voltage - Max:	3.6 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	FM28V020-TG
Packaging:	Reel
Brand:	Infineon Technologies
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Operating Supply Voltage:	3.3 V
Product Type:	FRAM
Factory Pack Quantity:	1500
Subcategory:	Memory & Data Storage

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

FM28V020-TGTR Datasheet (PDF)

Statement Regarding the RoHS Compliance of Cypress Products

Compliance Codes

TARIC:: 8542329000
CNHTS:: 8542319090
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 8542320905
KRHTS:: 8542321040
MXHTS:: 8471600499
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Taiwan
Country of Diffusion:: United States

The country is subject to change at the time of shipment.

Parallel F-RAM Non-Volatile Memory

Infineon Technologies Parallel F-RAM Non-Volatile Memory operates similarly to other RAM devices and can be used as a drop-in replacement for a standard SRAM in a system. These F-RAMs read and write similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. These features make these devices ideal for non-volatile memory applications requiring frequent or rapid writes.