|
|
GaN FET GaN HEMT Die DC-18GHz, 70 Watt
- CGHV1J070D-GP4
- MACOM
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
941-CGHV1J070D
|
MACOM
|
GaN FET GaN HEMT Die DC-18GHz, 70 Watt
|
|
|
|
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
RD MOSFET tranzistoriai
- MWT-PH7F71
- CML Micro
-
1:
72,10 €
-
3Prieinamumas
|
„Mouser“ Dalies Nr.
938-MWT-PH7F71
|
CML Micro
|
RD MOSFET tranzistoriai
|
|
3Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
10
|
|
RF MOSFETs
|
GaAs
|
SMD/SMT
|
Die
|
|
|
|
GaN FET GaN HEMT Die DC-4.0GHz, 320 Watt
- CGHV40320D-GP4
- MACOM
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
941-CGHV40320D
|
MACOM
|
GaN FET GaN HEMT Die DC-4.0GHz, 320 Watt
|
|
|
|
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
RD MOSFET tranzistoriai Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
- MWT-PH8F
- CML Micro
-
10:
108,26 €
-
100Prieinamumas
|
„Mouser“ Dalies Nr.
938-MWT-PH8F
|
CML Micro
|
RD MOSFET tranzistoriai Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
|
|
100Prieinamumas
|
|
Min.: 10
Daugkart.: 10
|
|
RF MOSFETs
|
GaAs
|
|
Die
|
|
|
|
RD MOSFET tranzistoriai Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
- MWT-PH9F
- CML Micro
-
10:
81,42 €
-
100Prieinamumas
|
„Mouser“ Dalies Nr.
938-MWT-PH9F
|
CML Micro
|
RD MOSFET tranzistoriai Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
|
|
100Prieinamumas
|
|
Min.: 10
Daugkart.: 10
|
|
RF MOSFETs
|
GaAs
|
|
Die
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Diode,Schottky,ZBD,Chip
MACOM MA4E931Z2-1261A
- MA4E931Z2-1261A
- MACOM
-
100:
9,14 €
-
800Prieinamumas
|
„Mouser“ Dalies Nr.
937-MA4E931Z2-1261A
|
MACOM
|
SCHOTTKY Diodes ir Lygintuvai Diode,Schottky,ZBD,Chip
|
|
800Prieinamumas
|
|
Min.: 100
Daugkart.: 100
|
|
Schottky Diodes & Rectifiers
|
|
SMD/SMT
|
Die
|
|
|
|
GaN FET GaN HEMT Die DC-18GHz, 25 Watt
- CGHV1J025D-GP4
- MACOM
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
941-CGHV1J025D
|
MACOM
|
GaN FET GaN HEMT Die DC-18GHz, 25 Watt
|
|
|
|
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
RD MOSFET tranzistoriai Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
- MWT-PH15F
- CML Micro
-
10:
124,19 €
-
100Prieinamumas
|
„Mouser“ Dalies Nr.
938-MWT-PH15F
|
CML Micro
|
RD MOSFET tranzistoriai Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
|
|
100Prieinamumas
|
|
Min.: 10
Daugkart.: 10
|
|
RF MOSFETs
|
GaAs
|
|
Die
|
|
|
|
RD MOSFET tranzistoriai Low Noise pHEMT Devices
- MWT-LN600
- CML Micro
-
10:
29,33 €
-
100Prieinamumas
|
„Mouser“ Dalies Nr.
938-MWT-LN600
|
CML Micro
|
RD MOSFET tranzistoriai Low Noise pHEMT Devices
|
|
100Prieinamumas
|
|
Min.: 10
Daugkart.: 10
|
|
RF MOSFETs
|
GaAs
|
|
Die
|
|
|
|
RD MOSFET tranzistoriai Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
- MWT-PH11F
- CML Micro
-
10:
116,49 €
-
90Prieinamumas
|
„Mouser“ Dalies Nr.
938-MWT-PH11F
|
CML Micro
|
RD MOSFET tranzistoriai Narrow and Broad Band High Efficiency Amplifier, High Power Amplifier, and Oscillator Applications
|
|
90Prieinamumas
|
|
Min.: 10
Daugkart.: 10
|
|
RF MOSFETs
|
GaAs
|
|
Die
|
|
|
|
GaN FET GaN HEMT Die DC-6.0GHz, 60 Watt
- CGH60060D-GP4
- MACOM
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
941-CGH60060D
|
MACOM
|
GaN FET GaN HEMT Die DC-6.0GHz, 60 Watt
|
|
|
|
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
RD MOSFET tranzistoriai
- MWT-PH8F71
- CML Micro
-
1:
117,73 €
-
10Prieinamumas
|
„Mouser“ Dalies Nr.
938-MWT-PH8F71
|
CML Micro
|
RD MOSFET tranzistoriai
|
|
10Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
10
|
|
RF MOSFETs
|
GaAs
|
SMD/SMT
|
Die
|
|
|
|
GaN FET DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
- TGF2023-2-10
- Qorvo
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
772-TGF2023-2-10
|
Qorvo
|
GaN FET DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
|
|
|
|
|
|
GaN FETs
|
GaN-on-SiC
|
|
Die
|
|
|
|
GaN FET DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
- TGF2954
- Qorvo
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
772-TGF2954
|
Qorvo
|
GaN FET DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm
|
|
|
|
|
|
GaN FETs
|
GaN-on-SiC
|
SMD/SMT
|
Die
|
|
|
|
RD MOSFET tranzistoriai
CML Micro MWT-PH27F71
- MWT-PH27F71
- CML Micro
-
1:
48,19 €
-
3Prieinamumas
|
„Mouser“ Dalies Nr.
938-MWT-PH27F71
|
CML Micro
|
RD MOSFET tranzistoriai
|
|
3Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
10
|
|
RF MOSFETs
|
GaAs
|
SMD/SMT
|
Die
|
|
|
|
GaN FET 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
- EPC2090
- EPC
-
1:
3,59 €
-
2 376Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
65-EPC2090
Naujas Produktas
|
EPC
|
GaN FET 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
|
|
2 376Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
GaN FET 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
- EPC2091
- EPC
-
1:
8,37 €
-
990Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
65-EPC2091
Naujas Produktas
|
EPC
|
GaN FET 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
|
|
990Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Diode,Schottky,GaAs,FlipChip,Single
- MA4E1317
- MACOM
-
100:
4,65 €
-
3 900Prieinamumas
-
6 000Tikėtina 2026-11-20
|
„Mouser“ Dalies Nr.
937-MA4E1317
|
MACOM
|
SCHOTTKY Diodes ir Lygintuvai Diode,Schottky,GaAs,FlipChip,Single
|
|
3 900Prieinamumas
6 000Tikėtina 2026-11-20
|
|
Min.: 100
Daugkart.: 100
|
|
Schottky Diodes & Rectifiers
|
GaAs
|
SMD/SMT
|
Die
|
|
|
|
GaN FET GaN HEMT Die DC-6.0GHz, 8 Watt
- CGH60008D-GP4
- MACOM
-
10:
27,19 €
-
560Prieinamumas
|
„Mouser“ Dalies Nr.
941-CGH60008D
|
MACOM
|
GaN FET GaN HEMT Die DC-6.0GHz, 8 Watt
|
|
560Prieinamumas
|
|
Min.: 10
Daugkart.: 10
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
GaN FET EPC eGaN FET,100 V, 10.5 milliohm at 5 V, CuPillar 2.15 x 1.25
- EPC2044
- EPC
-
1:
2,27 €
-
2 500Prieinamumas
|
„Mouser“ Dalies Nr.
65-EPC2044
|
EPC
|
GaN FET EPC eGaN FET,100 V, 10.5 milliohm at 5 V, CuPillar 2.15 x 1.25
|
|
2 500Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
GaN FETs
|
|
SMD/SMT
|
Die
|
|
|
|
GaN FET EPC eGaN Symetrical Half Bridge80 V, 5.5 milliohm at 5 V, BGA 6.05 x 2.3
- EPC2103
- EPC
-
1:
9,90 €
-
734Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2103
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN Symetrical Half Bridge80 V, 5.5 milliohm at 5 V, BGA 6.05 x 2.3
|
|
734Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
500
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
GaN FET GaN HEMT Die DC-8.0GHz, 15 Watt
- CG2H80015D-GP4
- MACOM
-
10:
94,24 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
941-CG2H80015D-GP4
|
MACOM
|
GaN FET GaN HEMT Die DC-8.0GHz, 15 Watt
|
|
30Prieinamumas
|
|
Min.: 10
Daugkart.: 10
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
GaN FET GaN HEMT Die DC-8.0GHz, 30 Watt
- CG2H80030D-GP4
- MACOM
-
10:
104,07 €
-
20Prieinamumas
|
„Mouser“ Dalies Nr.
941-CG2H80030D
|
MACOM
|
GaN FET GaN HEMT Die DC-8.0GHz, 30 Watt
|
|
20Prieinamumas
|
|
Min.: 10
Daugkart.: 10
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
GaN FET GaN HEMT Die DC-8.0GHz, 60 Watt
- CG2H80060D-GP4
- MACOM
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
941-CG2H80060D-GP4
|
MACOM
|
GaN FET GaN HEMT Die DC-8.0GHz, 60 Watt
|
|
|
|
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
|
|
|
RD MOSFET tranzistoriai Narrow and Broad Band Linear Amplifier and Oscillator Applications
- MWT-5F
- CML Micro
-
1:
60,04 €
-
20Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
938-MWT-5F
NRND
|
CML Micro
|
RD MOSFET tranzistoriai Narrow and Broad Band Linear Amplifier and Oscillator Applications
|
|
20Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
RF MOSFETs
|
GaAs
|
|
Die
|
|