TO-252-3 Puslaidininkiai

Rezultatai: 1 288
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS
ROHM Semiconductor MOSFETs Pch -60V -48A, TO-252 (DPAK), Power MOSFET for Automotive 1 388Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor MOSFETs Nch 60V 40A, TO-252 (DPAK), Power MOSFET for Automotive 2 180Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor MOSFETs Pch -80V -10A TO-252, Power MOSFET 2 490Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor MOSFETs TO252 P-CH 80V 4.5A 2 380Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500
ROHM Semiconductor MOSFETs Nch 100V 36A, TO-252 (DPAK), Power MOSFET for Automotive 2 184Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Nexperia GaN FET GANE240-700BBA/SOT428/DPAK 2 488Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Texas Instruments LDO įtampos reguliatoriai Automotive 450-mA of f-battery (42V) low 2 426Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 1 001
: 2 500

Texas Instruments LDO įtampos reguliatoriai Automotive 450-mA of f-battery (42V) low 2 479Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 1 001
: 2 500



Diodes Incorporated SiC SCHOTTKY diodai SiC SBD 650V 1000V TO252 T&R 2.5K 2 495Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Diodes Incorporated SiC SCHOTTKY diodai SiC SBD 650V 1000V TO252 T&R 2.5K 2 229Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500



Diodes Incorporated SiC SCHOTTKY diodai SiC SBD 650V 1000V TO252 T&R 2.5K 2 500Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Bourns SiC SCHOTTKY diodai 650V 8A High Surge SiC diode in TO252 4 945Prieinamumas
Min.: 1
Daugkart.: 1
: 5 000

Bourns SiC SCHOTTKY diodai RECT 650V 10A SM SCHOTTKY 4 965Prieinamumas
Min.: 1
Daugkart.: 1
: 5 000

ROHM Semiconductor Dvipoliai tranzistoriai – BJT PNP, TO-252 (DPAK), -120V -3A, Power Transistor for Automotive 4 583Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor MOSFETs 600V 10A TO-252, High-speed switching Power MOSFET 2 415Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor MOSFETs TO252 650V 42A N-CH MOSFET 4 936Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor MOSFETs 650V 1.7A TO-252, Low-noise Power MOSFET 3 457Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor MOSFETs Nch 40V 80A, TO-252 (DPAK), Power MOSFET for Automotive 2 272Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor MOSFETs Nch 40V 80A, TO-252 (DPAK), Power MOSFET for Automotive 2 480Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor MOSFETs Transistor, MOSFET Pch, -100V(Vdss), -20A(Id), (4.5V, 6.0V Drive) 2 467Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor MOSFETs TO252 100V 35A N-CH MOSFET 3 796Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor MOSFETs Nch 100V 59A, TO-252 (DPAK), Power MOSFET for Automotive 2 705Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 4 797Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500


STMicroelectronics LDO įtampos reguliatoriai VOLTAGE REGULATOR 21 292Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

STMicroelectronics Linijiniai įtampos reguliatoriai 1.2-37V Adj Positive 73 477Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500