Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Rezultatai: 1 446
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Diodes Incorporated MOSFETs 100V N-Ch Enh FET 20Vgss 2.6A 1.2W 38 150Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 390
: 3 000

Diodes Incorporated MOSFETs 100V 175c N-Ch FET 28mOhm 10V 55A 2 048Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Diodes Incorporated MOSFETs MOSFET BVDSS: 41V-60V PowerDI5060-8/SWP T&R 2.5K 3 368Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Diodes Incorporated MOSFETs 30V P-Ch Enh FET 20Vgss 0.9W -80A 8 651Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Diodes Incorporated MOSFETs P-Ch Enh Mode -30V Low Rdson -20Vgss 9 595Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 320
: 2 500

Diodes Incorporated MOSFETs MOSFET BVDSS: 61V-100V TO252 T&R 2.5K 7 403Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 140
: 2 500


Diodes Incorporated MOSFETs MOSFET BVDSS 2 442Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Diodes Incorporated MOSFETs 40V 175c N-Ch FET 3.7mOHm 10V 100A 5 000Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500
Diodes Incorporated MOSFETs 40V 175c N-Ch Enh 20Vgss 7.3mOhm 70A 6 923Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Diodes Incorporated MOSFETs MOSFET BVDSS: 61V-100V 2 016Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500


Diodes Incorporated MOSFETs N-Chan 60V MOSFET (UMOS) 16 988Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 220
: 1 000

Diodes Incorporated MOSFETs P-Chan 60V MOSFET (UMOS) 9 572Prieinamumas
7 500Tikėtina 2027-01-15
Min.: 1
Daugkart.: 1
Maks.: 140
: 2 500


Diodes Incorporated MOSFETs MOSFET BVDSS 76 810Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 3 000
: 3 000

Diodes Incorporated MOSFETs MOSFET BVDSS: 8V-24V SOT23 T&R 10K 76 013Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 1 130
: 10 000

Diodes Incorporated MOSFETs MOSFET P-CHAN. 19 788Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000


Diodes Incorporated MOSFETs MOSFET BVDSS: 25V-30V 8 550Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 210
: 2 500


Diodes Incorporated MOSFETs MOSFET BVDSS: 31V-40V 45 587Prieinamumas
24 000Tikėtina 2026-09-18
Min.: 1
Daugkart.: 1
Maks.: 3 000
: 3 000


Diodes Incorporated MOSFETs N-Chnl 60V 3 293Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 150
: 4 000


Diodes Incorporated MOSFETs 12V Enh Mode FET 32 281Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 550
: 3 000


Diodes Incorporated MOSFETs 30V N-Ch Enh Mode 26.5mOhm 12Vgs 570pF 46 824Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 950
: 10 000

Diodes Incorporated MOSFETs 40V N-Ch Enh Mode 30mOhm 10V 13.8A 11 043Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 440
: 2 500

Diodes Incorporated MOSFETs MOSFETBVDSS: 8V-24V 8 087Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Diodes Incorporated MOSFETs P-Ch Enh Mode FET 4 283Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 140
: 2 500
Diodes Incorporated MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6 T&R 3K 8 677Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000


Diodes Incorporated MOSFETs N-Chnl 60V 19 108Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 280
: 3 000