|
|
MOSFETs 100V 1.4A N-Channel MOSFET H-Bridge
- ZXMHC10A07T8TA
- Diodes Incorporated
-
1:
2,51 €
-
1 075Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
522-ZXMHC10A07T8TA
Netinkama eksploatuoti
|
Diodes Incorporated
|
MOSFETs 100V 1.4A N-Channel MOSFET H-Bridge
|
|
1 075Prieinamumas
|
|
|
2,51 €
|
|
|
1,32 €
|
|
|
1,08 €
|
|
|
0,886 €
|
|
|
0,772 €
|
|
|
Peržiūrėti
|
|
|
0,744 €
|
|
|
0,743 €
|
|
|
Pasiūlymas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
MOSFET moduliai PM-MOSFET-FREDFET-8-SP1
- APTM50H15FT1G
- Microchip Technology
-
1:
50,90 €
-
14Prieinamumas
|
„Mouser“ Dalies Nr.
494-APTM50H15FT1G
|
Microchip Technology
|
MOSFET moduliai PM-MOSFET-FREDFET-8-SP1
|
|
14Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai APM16 CAA H-BRIDGE SF3
- FAM65HR51DS2
- onsemi
-
1:
32,81 €
-
42Prieinamumas
|
„Mouser“ Dalies Nr.
863-FAM65HR51DS2
|
onsemi
|
MOSFET moduliai APM16 CAA H-BRIDGE SF3
|
|
42Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Igbt Moduliai MODULES IGBT - ECONO IGBT
- VS-GT51YF120NT
- Vishay Semiconductors
-
1:
81,09 €
-
21Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
78-VS-GT51YF120NT
Naujas Produktas
|
Vishay Semiconductors
|
Igbt Moduliai MODULES IGBT - ECONO IGBT
|
|
21Prieinamumas
|
|
|
81,09 €
|
|
|
67,46 €
|
|
|
62,32 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Igbt Moduliai MODULES IGBT - ECONO IGBT
- VS-GT76YF120NT
- Vishay Semiconductors
-
1:
105,42 €
-
18Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
78-VS-GT76YF120NT
Naujas Produktas
|
Vishay Semiconductors
|
Igbt Moduliai MODULES IGBT - ECONO IGBT
|
|
18Prieinamumas
|
|
|
105,42 €
|
|
|
87,69 €
|
|
|
81,01 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs Quad N-Ch Matched Pr VGS=0.0V
- ALD210808PCL
- Advanced Linear Devices
-
1:
9,14 €
-
20Prieinamumas
|
„Mouser“ Dalies Nr.
585-ALD210808PCL
|
Advanced Linear Devices
|
MOSFETs Quad N-Ch Matched Pr VGS=0.0V
|
|
20Prieinamumas
|
|
|
9,14 €
|
|
|
6,45 €
|
|
|
5,37 €
|
|
|
4,79 €
|
|
|
4,49 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai 750V, 90A, Full-bridge, Automotive / Industrial Grade SiC Power Module
- BST91B1P4K01-VC
- ROHM Semiconductor
-
1:
95,01 €
-
56Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
755-BST91B1P4K01-VC
Naujas Produktas
|
ROHM Semiconductor
|
MOSFET moduliai 750V, 90A, Full-bridge, Automotive / Industrial Grade SiC Power Module
|
|
56Prieinamumas
|
|
|
95,01 €
|
|
|
79,03 €
|
|
|
72,49 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai 15M OHM 1200V 40A M3S SIC FULL BRIDGE MODULE
- NXH015F120M3F1PTG
- onsemi
-
1:
58,54 €
-
67Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-XH015F120M3F1PTG
Naujas Produktas
|
onsemi
|
MOSFET moduliai 15M OHM 1200V 40A M3S SIC FULL BRIDGE MODULE
|
|
67Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 5
|
|
|
|
|
MOSFETs Quad P-Channel EPAD Matched Pair
- ALD310700SCL
- Advanced Linear Devices
-
1:
10,56 €
-
26Prieinamumas
|
„Mouser“ Dalies Nr.
585-ALD310700SCL
|
Advanced Linear Devices
|
MOSFETs Quad P-Channel EPAD Matched Pair
|
|
26Prieinamumas
|
|
|
10,56 €
|
|
|
6,75 €
|
|
|
5,61 €
|
|
|
5,45 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs Quad P-Channel EPAD Matched Pair
- ALD310702ASCL
- Advanced Linear Devices
-
1:
12,85 €
-
43Prieinamumas
|
„Mouser“ Dalies Nr.
585-ALD310702ASCL
|
Advanced Linear Devices
|
MOSFETs Quad P-Channel EPAD Matched Pair
|
|
43Prieinamumas
|
|
|
12,85 €
|
|
|
10,05 €
|
|
|
8,37 €
|
|
|
7,45 €
|
|
|
6,97 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Igbt Moduliai EasyPACK module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and PressFIT / NTC
- F3L340R12W3H7H11BPSA1
- Infineon Technologies
-
1:
104,74 €
-
7Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-F3L340R12W3H7H11
Naujas Produktas
|
Infineon Technologies
|
Igbt Moduliai EasyPACK module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and PressFIT / NTC
|
|
7Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Diskrečiųjų Puslaidininkių Moduliai EasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC
- F411MR12W3M1HB11BPSA1
- Infineon Technologies
-
1:
120,97 €
-
4Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-F411MR12W3M1HB11
Naujas Produktas
|
Infineon Technologies
|
Diskrečiųjų Puslaidininkių Moduliai EasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai 1200V 9mohm Full-Bridge SiCPAK G SiC Module
- G3F09MT12GB4
- GeneSiC Semiconductor
-
1:
239,33 €
-
95Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
905-G3F09MT12GB4
Naujas Produktas
|
GeneSiC Semiconductor
|
MOSFET moduliai 1200V 9mohm Full-Bridge SiCPAK G SiC Module
|
|
95Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai 1200V 9mohm Full-Bridge SiCPAK G SiC Module, TIM
- G3F09MT12GB4-T
- GeneSiC Semiconductor
-
1:
252,49 €
-
94Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
905-G3F09MT12GB4-T
Naujas Produktas
|
GeneSiC Semiconductor
|
MOSFET moduliai 1200V 9mohm Full-Bridge SiCPAK G SiC Module, TIM
|
|
94Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 60V N-Channel PowerTrench MOSFET
- FDMQ86530L
- onsemi
-
1:
4,40 €
-
10 236Prieinamumas
-
6 000Tikėtina 2026-09-22
|
„Mouser“ Dalies Nr.
512-FDMQ86530L
|
onsemi
|
MOSFETs 60V N-Channel PowerTrench MOSFET
|
|
10 236Prieinamumas
6 000Tikėtina 2026-09-22
|
|
|
4,40 €
|
|
|
2,89 €
|
|
|
2,16 €
|
|
|
1,81 €
|
|
|
1,81 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 530
:
3 000
|
|
|
|
|
MOSFETs 2PR N- & PCH ENHANCE MD MSFET w/DRAIN-DI
- TC7920K6-G
- Microchip Technology
-
1:
2,12 €
-
2 220Prieinamumas
|
„Mouser“ Dalies Nr.
689-TC7920K6-G
|
Microchip Technology
|
MOSFETs 2PR N- & PCH ENHANCE MD MSFET w/DRAIN-DI
|
|
2 220Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 300
|
|
|
|
|
MOSFETs 2PR N- & PCH ENHANCE MODE MOSFET
- TC8220K6-G
- Microchip Technology
-
1:
2,22 €
-
2 173Prieinamumas
|
„Mouser“ Dalies Nr.
689-TC8220K6-G
|
Microchip Technology
|
MOSFETs 2PR N- & PCH ENHANCE MODE MOSFET
|
|
2 173Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 300
|
|
|
|
|
MOSFET moduliai 1200V 18mohm Full-Bridge SiCPAK F SiC Module
- G3F18MT12FB4
- GeneSiC Semiconductor
-
1:
119,78 €
-
95Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
905-G3F18MT12FB4
Naujas Produktas
|
GeneSiC Semiconductor
|
MOSFET moduliai 1200V 18mohm Full-Bridge SiCPAK F SiC Module
|
|
95Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai 1200V 18mohm Full-Bridge SiCPAK F SiC Module. TIM
- G3F18MT12FB4-T
- GeneSiC Semiconductor
-
1:
126,37 €
-
96Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
905-G3F18MT12FB4-T
Naujas Produktas
|
GeneSiC Semiconductor
|
MOSFET moduliai 1200V 18mohm Full-Bridge SiCPAK F SiC Module. TIM
|
|
96Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Igbt Moduliai Automotive grade Easy modules for On Board Charger (OBC) and EV aux applications
- F435MR07W1D7S8B11ABPSA1
- Infineon Technologies
-
1:
48,48 €
-
19Prieinamumas
|
„Mouser“ Dalies Nr.
726-F435MR07W1D7S8B1
|
Infineon Technologies
|
Igbt Moduliai Automotive grade Easy modules for On Board Charger (OBC) and EV aux applications
|
|
19Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Dvipoliai tranzistoriai – BJT 16-SOIC NPN
- MMPQ2222A
- onsemi
-
1:
2,43 €
-
2 517Prieinamumas
-
20 000Tikėtina 2026-11-06
|
„Mouser“ Dalies Nr.
512-MMPQ2222A
|
onsemi
|
Dvipoliai tranzistoriai – BJT 16-SOIC NPN
|
|
2 517Prieinamumas
20 000Tikėtina 2026-11-06
|
|
|
2,43 €
|
|
|
1,57 €
|
|
|
1,12 €
|
|
|
1,12 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 220
:
2 500
|
|
|
|
|
Dvipoliai tranzistoriai – BJT 16-SOIC NPN
- MMPQ3904
- onsemi
-
1:
2,43 €
-
11 182Prieinamumas
|
„Mouser“ Dalies Nr.
512-MMPQ3904
|
onsemi
|
Dvipoliai tranzistoriai – BJT 16-SOIC NPN
|
|
11 182Prieinamumas
|
|
|
2,43 €
|
|
|
1,56 €
|
|
|
1,14 €
|
|
|
1,14 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 380
:
2 500
|
|
|
|
|
MOSFETs Mosfet H-Bridge 30/-30V 2.7/-2.1A
- ZXMHC3A01N8TC
- Diodes Incorporated
-
1:
1,50 €
-
21 592Prieinamumas
|
„Mouser“ Dalies Nr.
522-ZXMHC3A01N8TC
|
Diodes Incorporated
|
MOSFETs Mosfet H-Bridge 30/-30V 2.7/-2.1A
|
|
21 592Prieinamumas
|
|
|
1,50 €
|
|
|
0,955 €
|
|
|
0,633 €
|
|
|
0,498 €
|
|
|
0,455 €
|
|
|
0,455 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 1 660
:
2 500
|
|
|
|
|
MOSFETs MOSFET H-BRIDGE SOP-8L
- ZXMHC3F381N8TC
- Diodes Incorporated
-
1:
1,63 €
-
7 523Prieinamumas
|
„Mouser“ Dalies Nr.
522-ZXMHC3F381N8TC
|
Diodes Incorporated
|
MOSFETs MOSFET H-BRIDGE SOP-8L
|
|
7 523Prieinamumas
|
|
|
1,63 €
|
|
|
0,808 €
|
|
|
0,681 €
|
|
|
0,592 €
|
|
|
0,592 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 750
:
2 500
|
|
|
|
|
Dvipoliai tranzistoriai – BJT Matched Monolithic Quad Transistor
- MAT14ARZ-R7
- Analog Devices
-
1:
14,00 €
-
194Prieinamumas
|
„Mouser“ Dalies Nr.
584-MAT14ARZ-R7
|
Analog Devices
|
Dvipoliai tranzistoriai – BJT Matched Monolithic Quad Transistor
|
|
194Prieinamumas
|
|
|
14,00 €
|
|
|
9,88 €
|
|
|
8,48 €
|
|
|
7,20 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Lietuva
