|
|
EEprom 1kx8 8k 32B Pg 1.8V
- 25AA080B-I/ST
- Microchip Technology
-
1:
0,654 €
-
464Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
579-25AA080B-I/ST
NRND
|
Microchip Technology
|
EEprom 1kx8 8k 32B Pg 1.8V
|
|
464Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
8 kbit
|
SPI
|
10 MHz
|
1 k x 8
|
TSSOP-8
|
50 ns
|
1.8 V
|
5.5 V
|
SMD/SMT
|
200 Year
|
- 40 C
|
+ 85 C
|
|
|
Tube
|
|
|
|
EEprom 256x8-128x16 - 1.8V
- 93AA56/P
- Microchip Technology
-
1:
0,731 €
-
414Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
579-93AA56/P
NRND
|
Microchip Technology
|
EEprom 256x8-128x16 - 1.8V
|
|
414Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
2 kbit
|
3-Wire, Microwire
|
2 MHz
|
256 x 8/128 x 16
|
PDIP-8
|
400 ns
|
1.8 V
|
5.5 V
|
Through Hole
|
200 Year
|
0 C
|
+ 70 C
|
93AA46
|
|
Tube
|
|
|
|
EEprom 516x8 Or 1024x8
- 93LC76-I/P
- Microchip Technology
-
1:
1,12 €
-
157Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
579-93LC76-I/P
NRND
|
Microchip Technology
|
EEprom 516x8 Or 1024x8
|
|
157Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
8 kbit
|
3-Wire, Microwire
|
3 MHz
|
1 k x 8/512 x 16
|
PDIP-8
|
100 ns
|
2.5 V
|
6 V
|
Through Hole
|
200 Year
|
- 40 C
|
+ 85 C
|
93LC76
|
|
Tube
|
|
|
|
EEprom 1 Mbit Serial
- M24M01-RMN6P
- STMicroelectronics
-
1:
1,67 €
-
3 846Prieinamumas
-
4 000Pagal užsakymą
|
„Mouser“ Dalies Nr.
511-M24M01-RMN6P
|
STMicroelectronics
|
EEprom 1 Mbit Serial
|
|
3 846Prieinamumas
4 000Pagal užsakymą
|
|
Min.: 1
Daugkart.: 1
|
|
|
1 Mbit
|
2-Wire, I2C
|
1 MHz
|
128 k x 8
|
SOIC-8
|
500 ns
|
1.8 V
|
5.5 V
|
SMD/SMT
|
200 Year
|
- 40 C
|
+ 85 C
|
M24M01-R
|
|
Tube
|
|
|
|
EEprom 1 Mbit SPI bus EEprom
- M95M01-RMN6P
- STMicroelectronics
-
1:
1,80 €
-
6 560Prieinamumas
|
„Mouser“ Dalies Nr.
511-M95M01-RMN6P
|
STMicroelectronics
|
EEprom 1 Mbit SPI bus EEprom
|
|
6 560Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
1 Mbit
|
SPI
|
16 MHz
|
128 k x 8
|
SOIC-8
|
25 ns
|
1.7 V
|
5.5 V
|
SMD/SMT
|
200 Year
|
- 40 C
|
+ 85 C
|
M95M01-R
|
|
Tube
|
|
|
|
EEprom 10MS IND TEMP 2.7V
- AT24C64B-10TU-2.7
- Microchip Technology
-
1:
0,826 €
-
2 645Prieinamumas
|
„Mouser“ Dalies Nr.
556-A24C64B10TU2.7
|
Microchip Technology
|
EEprom 10MS IND TEMP 2.7V
|
|
2 645Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
64 kbit
|
2-Wire, I2C
|
400 kHz
|
8 k x 8
|
TSSOP-8
|
900 ns
|
2.7 V
|
5.5 V
|
SMD/SMT
|
100 Year
|
- 40 C
|
+ 85 C
|
|
|
Tube
|
|
|
|
EEprom 8 NIPDAU LF 2.7V - 10MS 2.7V
- AT24C64BN-10SU-2.7
- Microchip Technology
-
1:
0,722 €
-
4 046Prieinamumas
|
„Mouser“ Dalies Nr.
556-A24C64BN10SU2.7
|
Microchip Technology
|
EEprom 8 NIPDAU LF 2.7V - 10MS 2.7V
|
|
4 046Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
64 kbit
|
2-Wire, I2C
|
400 kHz
|
8 k x 8
|
SOIC-Narrow-8
|
900 ns
|
2.7 V
|
5.5 V
|
SMD/SMT
|
100 Year
|
- 40 C
|
+ 85 C
|
|
|
Tube
|
|
|
|
EEprom 256K 5V SDP - 90NS
- AT28HC256-90LM/883
- Microchip Technology
-
1:
240,59 €
-
11Prieinamumas
|
„Mouser“ Dalies Nr.
556-A28HC25690LM883
|
Microchip Technology
|
EEprom 256K 5V SDP - 90NS
Norint eksportuoti šį produktą iš Jungtinių Amerikos Valstijų gali prireikti papildomų dokumentų.
|
|
11Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
256 kbit
|
Parallel
|
5 MHz
|
32 k x 8
|
LCC-32
|
90 ns
|
4.5 V
|
5.5 V
|
SMD/SMT
|
10 Year
|
- 55 C
|
+ 125 C
|
AT28HC256
|
|
Tube
|
|
|
|
EEprom SERIAL EEprom 128K (16K x 8) 2WIRE 1.7V
- AT24C128C-SSHM-B
- Microchip Technology
-
1:
0,344 €
-
5 320Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT24C128C-SSHM-B
|
Microchip Technology
|
EEprom SERIAL EEprom 128K (16K x 8) 2WIRE 1.7V
|
|
5 320Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
128 kbit
|
2-Wire, I2C
|
1 MHz
|
16 k x 8
|
SOIC-Narrow-8
|
450 ns
|
1.7 V
|
5.5 V
|
SMD/SMT
|
40 Year
|
- 40 C
|
+ 85 C
|
AT24C128C
|
|
Tube
|
|
|
|
EEprom 256K (32K X 8), 2-WI 1.8V
- AT24C256C-SSHL-B
- Microchip Technology
-
1:
0,482 €
-
16 690Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT24C256C-SSHL-B
|
Microchip Technology
|
EEprom 256K (32K X 8), 2-WI 1.8V
|
|
16 690Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
256 kbit
|
2-Wire, I2C
|
1 MHz
|
32 k x 8
|
SOIC-Narrow-8
|
450 ns
|
1.7 V
|
5.5 V
|
SMD/SMT
|
100 Year
|
- 40 C
|
+ 85 C
|
AT24C256C
|
|
Tube
|
|
|
|
EEprom 256K (32K X 8), 2-WI 1.8V
- AT24C256C-XHL-B
- Microchip Technology
-
1:
0,464 €
-
3 359Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT24C256C-XHL-B
|
Microchip Technology
|
EEprom 256K (32K X 8), 2-WI 1.8V
|
|
3 359Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
256 kbit
|
2-Wire, I2C
|
1 MHz
|
32 k x 8
|
TSSOP-8
|
450 ns
|
1.7 V
|
5.5 V
|
SMD/SMT
|
100 Year
|
- 40 C
|
+ 85 C
|
AT24C256C
|
|
Tube
|
|
|
|
EEprom SERIAL EEprom 64K 2-WIRE 1.7V
- AT24C64D-XHM-B
- Microchip Technology
-
1:
0,31 €
-
13 651Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT24C64D-XHM-B
|
Microchip Technology
|
EEprom SERIAL EEprom 64K 2-WIRE 1.7V
|
|
13 651Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
64 kbit
|
2-Wire, I2C
|
1 MHz
|
8 k x 8
|
TSSOP-8
|
550 ns
|
1.7 V
|
5.5 V
|
SMD/SMT
|
100 Year
|
- 40 C
|
+ 85 C
|
AT24C64D
|
|
Tube
|
|
|
|
EEprom SERIAL EEprom, 1M 2-WIR-8 EIAJ SOIC
- AT24CM01-SHD-B
- Microchip Technology
-
1:
0,98 €
-
1 900Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT24CM01-SHD-B
|
Microchip Technology
|
EEprom SERIAL EEprom, 1M 2-WIR-8 EIAJ SOIC
|
|
1 900Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
1 Mbit
|
2-Wire, I2C
|
1 MHz
|
128 k x 8
|
SOIJ-8
|
550 ns
|
2.5 V
|
5.5 V
|
SMD/SMT
|
40 Year
|
- 40 C
|
+ 85 C
|
|
|
Tube
|
|
|
|
EEprom SERIAL EEprom, 1M 2-WIR-8 EIAJ SOIC
- AT24CM01-SHM-B
- Microchip Technology
-
1:
0,98 €
-
3 005Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT24CM01-SHM-B
|
Microchip Technology
|
EEprom SERIAL EEprom, 1M 2-WIR-8 EIAJ SOIC
|
|
3 005Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
1 Mbit
|
2-Wire, I2C
|
1 MHz
|
128 k x 8
|
SOIJ-8
|
550 ns
|
1.7 V
|
5.5 V
|
SMD/SMT
|
40 Year
|
- 40 C
|
+ 85 C
|
|
|
Tube
|
|
|
|
EEprom SERIAL EEprom, 1M 2-WIR-8 SOIC
- AT24CM01-SSHD-B
- Microchip Technology
-
1:
0,877 €
-
13 371Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT24CM01-SSHD-B
|
Microchip Technology
|
EEprom SERIAL EEprom, 1M 2-WIR-8 SOIC
|
|
13 371Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
1 Mbit
|
2-Wire, I2C
|
1 MHz
|
128 k x 8
|
SOIC-Narrow-8
|
550 ns
|
2.5 V
|
5.5 V
|
SMD/SMT
|
40 Year
|
- 40 C
|
+ 85 C
|
|
|
Tube
|
|
|
|
EEprom SERIAL EEprom, 1M 2-WIR-8 SOIC
- AT24CM01-SSHM-B
- Microchip Technology
-
1:
0,877 €
-
3 654Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT24CM01-SSHM-B
|
Microchip Technology
|
EEprom SERIAL EEprom, 1M 2-WIR-8 SOIC
|
|
3 654Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
1 Mbit
|
2-Wire, I2C
|
1 MHz
|
128 k x 8
|
SOIC-Narrow-8
|
550 ns
|
1.7 V
|
5.5 V
|
SMD/SMT
|
40 Year
|
- 40 C
|
+ 85 C
|
|
|
Tube
|
|
|
|
EEprom S/N SEEprom 32K I2C1MHz 8-SOIC-N
- AT24CS32-SSHM-B
- Microchip Technology
-
1:
0,353 €
-
7 464Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT24CS32-SSHM-B
|
Microchip Technology
|
EEprom S/N SEEprom 32K I2C1MHz 8-SOIC-N
|
|
7 464Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
32 kbit
|
2-Wire, I2C
|
1 MHz
|
4 k x 8
|
SOIC-Narrow-8
|
550 ns
|
1.7 V
|
5.5 V
|
SMD/SMT
|
100 Year
|
- 40 C
|
+ 85 C
|
|
|
Tube
|
|
|
|
EEprom 128K Density SPI 16,384 x 8 Organ
- AT25128B-SSHL-B
- Microchip Technology
-
1:
0,619 €
-
4 230Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT25128B-SSHL-B
|
Microchip Technology
|
EEprom 128K Density SPI 16,384 x 8 Organ
|
|
4 230Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
128 kbit
|
3-Wire, SPI
|
20 MHz
|
16 k x 8
|
SOIC-Narrow-8
|
80 ns
|
1.8 V
|
5.5 V
|
SMD/SMT
|
100 Year
|
- 40 C
|
+ 85 C
|
AT25128B
|
|
Tube
|
|
|
|
EEprom SERIAL EEprom 16K (2K X 8) SPI 1.8V
- AT25160B-SSHL-B
- Microchip Technology
-
1:
0,387 €
-
3 918Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT25160B-SSHL-B
|
Microchip Technology
|
EEprom SERIAL EEprom 16K (2K X 8) SPI 1.8V
|
|
3 918Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
16 kbit
|
3-Wire, SPI
|
20 MHz
|
2 k x 8
|
SOIC-Narrow-8
|
80 ns
|
1.8 V
|
5.5 V
|
SMD/SMT
|
100 Year
|
- 40 C
|
+ 85 C
|
AT25160B
|
|
Tube
|
|
|
|
EEprom 1.7-5.5V, 20MHz, Ind Temp, 8-SOIC-N
- AT25M01-SSHM-B
- Microchip Technology
-
1:
1,39 €
-
945Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT25M01-SSHM-B
|
Microchip Technology
|
EEprom 1.7-5.5V, 20MHz, Ind Temp, 8-SOIC-N
|
|
945Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
1 Mbit
|
3-Wire, SPI
|
20 MHz
|
128 k x 8
|
SOIC-Narrow-8
|
80 ns
|
1.7 V
|
5.5 V
|
SMD/SMT
|
100 Year
|
- 40 C
|
+ 85 C
|
C/F
|
|
Tube
|
|
|
|
EEprom 1M 5V SDP - 150NS IND TEMP
- AT28C010-15JU
- Microchip Technology
-
1:
50,35 €
-
89Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT28C01015JU
|
Microchip Technology
|
EEprom 1M 5V SDP - 150NS IND TEMP
|
|
89Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
1 Mbit
|
Parallel
|
5 MHz
|
128 k x 8
|
PLCC-32
|
150 ns
|
4.5 V
|
5.5 V
|
SMD/SMT
|
10 Year
|
- 40 C
|
+ 85 C
|
AT28C010
|
|
Tube
|
|
|
|
EEprom 120NS IND TEMP PKG- 120NS IND TEMP
- AT28C010E-12JU
- Microchip Technology
-
1:
48,39 €
-
174Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT28C010E12JU
|
Microchip Technology
|
EEprom 120NS IND TEMP PKG- 120NS IND TEMP
|
|
174Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
1 Mbit
|
Parallel
|
5 MHz
|
128 k x 8
|
PLCC-32
|
120 ns
|
4.5 V
|
5.5 V
|
SMD/SMT
|
10 Year
|
- 40 C
|
+ 85 C
|
AT28C010
|
|
Tube
|
|
|
|
EEprom 1M 3V SDP - 200NS IND TEMP
- AT28LV010-20JU
- Microchip Technology
-
1:
45,69 €
-
147Prieinamumas
-
224Tikėtina 2027-01-04
|
„Mouser“ Dalies Nr.
556-AT28LV010-20JU
|
Microchip Technology
|
EEprom 1M 3V SDP - 200NS IND TEMP
|
|
147Prieinamumas
224Tikėtina 2027-01-04
|
|
Min.: 1
Daugkart.: 1
|
|
|
1 Mbit
|
Parallel
|
5 MHz
|
128 k x 8
|
PLCC-32
|
200 ns
|
3.135 V
|
3.465 V
|
SMD/SMT
|
10 Year
|
- 40 C
|
+ 85 C
|
|
|
Tube
|
|
|
|
EEprom 4K (512x8/256x16) 3-WIRE, NiPdAu, 1.7V
- AT93C66B-SSHM-B
- Microchip Technology
-
1:
0,275 €
-
5 743Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT93C66B-SSHM-B
|
Microchip Technology
|
EEprom 4K (512x8/256x16) 3-WIRE, NiPdAu, 1.7V
|
|
5 743Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
4 kbit
|
3-Wire, Microwire
|
2 MHz
|
512 x 8/256 x 16
|
SOIC-Narrow-8
|
250 ns
|
1.7 V
|
5.5 V
|
SMD/SMT
|
100 Year
|
- 40 C
|
+ 85 C
|
AT93C66B
|
|
Tube
|
|
|
|
EEprom 1024K 128KX8 1.8V SER EE
- 24AA1025-I/SM
- Microchip Technology
-
1:
3,51 €
-
2 912Prieinamumas
|
„Mouser“ Dalies Nr.
579-24AA1025-I/SM
|
Microchip Technology
|
EEprom 1024K 128KX8 1.8V SER EE
|
|
2 912Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
1 Mbit
|
2-Wire, I2C
|
400 kHz
|
128 k x 8
|
SOIJ-8
|
900 ns
|
1.7 V
|
5.5 V
|
SMD/SMT
|
200 Year
|
- 40 C
|
+ 85 C
|
|
|
Tube
|
|