|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R024M1HXKSA1
- Infineon Technologies
-
1:
39,07 €
-
951Prieinamumas
-
720Tikėtina 2026-08-31
|
„Mouser“ Dalies Nr.
726-IMYH200R024M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
951Prieinamumas
720Tikėtina 2026-08-31
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
89 A
|
33 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
137 nC
|
- 55 C
|
+ 150 C
|
576 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R100M1HXKSA1
- Infineon Technologies
-
1:
15,63 €
-
7 008Prieinamumas
-
10 320Tikėtina 2026-11-19
|
„Mouser“ Dalies Nr.
726-IMYH200R100M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
7 008Prieinamumas
10 320Tikėtina 2026-11-19
|
|
|
15,63 €
|
|
|
9,68 €
|
|
|
9,01 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
26 A
|
131 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
55 nC
|
- 55 C
|
+ 150 C
|
217 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R050M1HXKSA1
- Infineon Technologies
-
1:
21,54 €
-
877Prieinamumas
-
1 920Pagal užsakymą
|
„Mouser“ Dalies Nr.
726-IMYH200R050M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
877Prieinamumas
1 920Pagal užsakymą
Turime sandėlyje:
877 Galime išsiųsti iš karto
Pagal užsakymą:
480 Tikėtina 2026-09-24
1 440 Tikėtina 2026-10-15
Gamintojo numatytas pristatymo laikas
53 Savaičių
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
48 A
|
64 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
82 nC
|
- 55 C
|
+ 150 C
|
348 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R075M1HXKSA1
- Infineon Technologies
-
1:
17,91 €
-
911Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMYH200R075M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
911Prieinamumas
|
|
|
17,91 €
|
|
|
11,23 €
|
|
|
10,72 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
34 A
|
98 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
64 nC
|
- 55 C
|
+ 150 C
|
267 W
|
Enhancement
|
CoolSIC
|
|
|
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R012M1HXKSA1
- Infineon Technologies
-
1:
68,48 €
-
10Tikėtina 2026-09-03
|
„Mouser“ Dalies Nr.
726-IMYH200R012M1HXK
|
Infineon Technologies
|
SiC MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
10Tikėtina 2026-09-03
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
123 A
|
16.5 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
246 nC
|
- 55 C
|
+ 150 C
|
552 W
|
Enhancement
|
CoolSIC
|
|
Lietuva