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Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu.
Qty. RoHS
Vishay Semiconductors SCHOTTKY Diodes ir Lygintuvai 7A, 100V, DFN3820A TRENCH SKY RECT.
Duomenų Lapas
17 463Prieinamumas
Min.: 1
Daugkart.: 1
: 14 000

Vishay SCHOTTKY Diodes ir Lygintuvai 8A, 100V DFN33A TMBS RECT
Duomenų Lapas
5 962Prieinamumas
„MouseReel“ galima
Min.: 1
Daugkart.: 1
: 6 000

Vishay SCHOTTKY Diodes ir Lygintuvai 9A, 100V DFN33A TMBS RECT
Duomenų Lapas
5 953Prieinamumas
„MouseReel“ galima
Min.: 1
Daugkart.: 1
: 6 000

Vishay SCHOTTKY Diodes ir Lygintuvai 9A, 100V DFN33A TMBS RECT
Duomenų Lapas
5 570Prieinamumas
„MouseReel“ galima
Min.: 1
Daugkart.: 1
: 6 000

Vishay SCHOTTKY Diodes ir Lygintuvai 9A, 100V DFN33A TMBS RECT
Duomenų Lapas
5 825Prieinamumas
„MouseReel“ galima
Min.: 1
Daugkart.: 1
: 6 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai RECT 100V 2A SM SKY BARRI
Duomenų Lapas
5 848Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai RECT 100V 10A SM SKY BARRI
Duomenų Lapas
3 700Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai RECT 100V 3A SM SKY BARRI
Duomenų Lapas
3 950Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai RECT 100V 5A SM SKY BARRI
Duomenų Lapas
4 000Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
Duomenų Lapas
2 583Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
Duomenų Lapas
7 534Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai RECT 100V 12A SM SKY BARRI
Duomenų Lapas
3 950Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai RECT 100V 12A SM SKY BARRI
Duomenų Lapas
3 568Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai RECT 100V 15A SM SKY BARRI
Duomenų Lapas
5 557Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai RECT 100V 15A SM SKY BARRI
Duomenų Lapas
4 095Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Duomenų Lapas
4 797Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati
Duomenų Lapas
4 497Prieinamumas
2 500Tikėtina 2026-10-26
Min.: 1
Daugkart.: 1
: 2 500

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
Duomenų Lapas
1 900Prieinamumas
„MouseReel“ galima
Min.: 1
Daugkart.: 1
: 1 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Duomenų Lapas
1 970Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
Duomenų Lapas
2 000Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Duomenų Lapas
1 988Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD: The YQ30NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Duomenų Lapas
1 886Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai RECT 100V 3A SM SKY BARRI
Duomenų Lapas
3 832Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai RECT 100V 5A SM SKY BARRI
Duomenų Lapas
5 900Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

ROHM Semiconductor SCHOTTKY Diodes ir Lygintuvai RECT 100V 5A SM SKY BARRI
Duomenų Lapas
3 900Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000