|
|
Lygintuvai 6A 600V 59ns Ultrafast
- VS-6EWL06FN-M3
- Vishay Semiconductors
-
1:
1,57 €
-
2 215Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-6EWL06FN-M3
|
Vishay Semiconductors
|
Lygintuvai 6A 600V 59ns Ultrafast
|
|
2 215Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
LDO įtampos reguliatoriai 2.5V 3.0A Positive
- LD1085D2M25R
- STMicroelectronics
-
1:
1,63 €
-
1 461Prieinamumas
|
„Mouser“ Dalies Nr.
511-LD1085D2M25-TR
|
STMicroelectronics
|
LDO įtampos reguliatoriai 2.5V 3.0A Positive
|
|
1 461Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
Linijiniai įtampos reguliatoriai 6V 500mA Fixed Pos V oltage Regulator
- UA78M06CKVURG3
- Texas Instruments
-
1:
0,843 €
-
1 895Prieinamumas
|
„Mouser“ Dalies Nr.
595-UA78M06CKVURG3
|
Texas Instruments
|
Linijiniai įtampos reguliatoriai 6V 500mA Fixed Pos V oltage Regulator
|
|
1 895Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 40V Vr; 6A Io TO-252 SBD
- RB095BGE-40TL
- ROHM Semiconductor
-
1:
1,31 €
-
2 394Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB095BGE-40TL
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai 40V Vr; 6A Io TO-252 SBD
|
|
2 394Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode 100V 15A, TO-252, Cathode Common, Low IR
- RBQ15BGE10ATL
- ROHM Semiconductor
-
1:
2,77 €
-
982Prieinamumas
|
„Mouser“ Dalies Nr.
755-RBQ15BGE10ATL
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode 100V 15A, TO-252, Cathode Common, Low IR
|
|
982Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Nch 250V 4A TO-252 (DPAK)
- RD3U040CNTL1
- ROHM Semiconductor
-
1:
1,93 €
-
1 654Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3U040CNTL1
|
ROHM Semiconductor
|
MOSFETs Nch 250V 4A TO-252 (DPAK)
|
|
1 654Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs TO252 250V 4.1A N-CH MOSFET
- RD3U041AAFRATL
- ROHM Semiconductor
-
1:
2,05 €
-
1 528Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3U041AAFRATL
|
ROHM Semiconductor
|
MOSFETs TO252 250V 4.1A N-CH MOSFET
|
|
1 528Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Lygintuvai Ultrafast 5A 600V 59ns
- VS-5EWL06FNTR-M3
- Vishay Semiconductors
-
1:
1,57 €
-
1 674Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-5EWL06FNTR-M3
|
Vishay Semiconductors
|
Lygintuvai Ultrafast 5A 600V 59ns
|
|
1 674Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
Lygintuvai 5A 600V 14ns Hyperfast
- VS-5EWX06FN-M3
- Vishay Semiconductors
-
1:
1,58 €
-
2 546Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-5EWX06FN-M3
|
Vishay Semiconductors
|
Lygintuvai 5A 600V 14ns Hyperfast
|
|
2 546Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 30V Vr 5A Io SBD TO-252(DPAK) 5A IF
- RB078BM30SFHTL
- ROHM Semiconductor
-
1:
2,16 €
-
4 728Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
755-RB078BM30SFHTL
NRND
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai 30V Vr 5A Io SBD TO-252(DPAK) 5A IF
|
|
4 728Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 200V, 20A SBD Super Low IR Type
- RB218BM200TL
- ROHM Semiconductor
-
1:
2,50 €
-
2 497Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
755-RB218BM200TL
NRND
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai 200V, 20A SBD Super Low IR Type
|
|
2 497Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 200V, 20A SBD Super Low IR Type
- RB218BM200FHTL
- ROHM Semiconductor
-
1:
2,65 €
-
2 797Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
755-RB218BM200FHTL
NRND
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai 200V, 20A SBD Super Low IR Type
|
|
2 797Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 200V, 10A SBD Super Low IR Type
- RB088BM200TL
- ROHM Semiconductor
-
1:
2,31 €
-
4 269Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
755-RB088BM200TL
NRND
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai 200V, 10A SBD Super Low IR Type
|
|
4 269Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 60V Vr 6A Io SBD TO-252(DPAK) 3A IF
- RB098BM-60FHTL
- ROHM Semiconductor
-
1:
1,47 €
-
3 837Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
755-RB098BM-60FHTL
NRND
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai 60V Vr 6A Io SBD TO-252(DPAK) 3A IF
|
|
3 837Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
IGBT IGBT w/ INTG DIODE 600V 8A
- IKD04N60RFATMA1
- Infineon Technologies
-
1:
1,42 €
-
2 192Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IKD04N60RFATMA1
NRND
|
Infineon Technologies
|
IGBT IGBT w/ INTG DIODE 600V 8A
|
|
2 192Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
IGBT IGBT w/ INTG DIODE 600V 5A
- IKD03N60RFATMA1
- Infineon Technologies
-
1:
1,36 €
-
2 526Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IKD03N60RFATMA1
NRND
|
Infineon Technologies
|
IGBT IGBT w/ INTG DIODE 600V 5A
|
|
2 526Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
IGBT IGBT PRODUCTS TrenchStop RC
- IKD15N60RF
- Infineon Technologies
-
1:
2,26 €
-
1 609Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IKD15N60RF
NRND
|
Infineon Technologies
|
IGBT IGBT PRODUCTS TrenchStop RC
|
|
1 609Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Dvipoliai tranzistoriai – BJT NPN VCE 0.4V IC 3A Tstg 1.0 VCEO 80V
- 2SC3303-Y(T6L1,NQ)
- Toshiba
-
1:
1,99 €
-
1 020Prieinamumas
-
2 000Tikėtina 2027-02-15
|
„Mouser“ Dalies Nr.
757-2SC3303-YT6L1NQ
|
Toshiba
|
Dvipoliai tranzistoriai – BJT NPN VCE 0.4V IC 3A Tstg 1.0 VCEO 80V
|
|
1 020Prieinamumas
2 000Tikėtina 2027-02-15
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
MOSFETs Transistor MOSFET, Nch 525V 5A 1st Gen, for Auto w/ESD Protect
- R6004END3TL1
- ROHM Semiconductor
-
1:
2,12 €
-
4 014Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6004END3TL1
|
ROHM Semiconductor
|
MOSFETs Transistor MOSFET, Nch 525V 5A 1st Gen, for Auto w/ESD Protect
|
|
4 014Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Transistor MOSFET, Nch 600V 9A 3rd Gen, Low Noise
- R6009END3TL1
- ROHM Semiconductor
-
1:
2,97 €
-
2 228Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6009END3TL1
|
ROHM Semiconductor
|
MOSFETs Transistor MOSFET, Nch 600V 9A 3rd Gen, Low Noise
|
|
2 228Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs 600V Vdss; 4A Id 60W Pd; TO-252
- R6004JND3TL1
- ROHM Semiconductor
-
1:
2,38 €
-
2 394Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6004JND3TL1
|
ROHM Semiconductor
|
MOSFETs 600V Vdss; 4A Id 60W Pd; TO-252
|
|
2 394Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
IGBT IGBT 500V 27A 1.3V 300mJ
- FGD3050G2V
- onsemi
-
1:
2,69 €
-
1 245Prieinamumas
|
„Mouser“ Dalies Nr.
863-FGD3050G2V
|
onsemi
|
IGBT IGBT 500V 27A 1.3V 300mJ
|
|
1 245Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Transistor MOSFET, Nch 600V 11A 3rd Gen, Low Noise
- R6011END3TL1
- ROHM Semiconductor
-
1:
3,42 €
-
2 230Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6011END3TL1
|
ROHM Semiconductor
|
MOSFETs Transistor MOSFET, Nch 600V 11A 3rd Gen, Low Noise
|
|
2 230Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Transistor MOSFET, Nch 600V 9A 3rd Gen, Fast Recover
- R6009JND3TL1
- ROHM Semiconductor
-
1:
3,04 €
-
2 280Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6009JND3TL1
|
ROHM Semiconductor
|
MOSFETs Transistor MOSFET, Nch 600V 9A 3rd Gen, Fast Recover
|
|
2 280Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Transistor MOSFET, Nch 600V 11A 3rd Gen, Fast Switch
- R6011KND3TL1
- ROHM Semiconductor
-
1:
3,42 €
-
2 292Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6011KND3TL1
|
ROHM Semiconductor
|
MOSFETs Transistor MOSFET, Nch 600V 11A 3rd Gen, Fast Switch
|
|
2 292Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|