|
|
Dvipoliai tranzistoriai – BJT NPN 30V 5A 10W TO-252(DPAK)
- 2SCR572D3FRATL
- ROHM Semiconductor
-
1:
1,96 €
-
1 628Prieinamumas
|
„Mouser“ Dalies Nr.
755-2SCR572D3FRATL
|
ROHM Semiconductor
|
Dvipoliai tranzistoriai – BJT NPN 30V 5A 10W TO-252(DPAK)
|
|
1 628Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
LDO įtampos reguliatoriai LDO REG 1.2V 0.5A 3PIN
- BD12KA5FP-E2
- ROHM Semiconductor
-
1:
0,851 €
-
1 627Prieinamumas
|
„Mouser“ Dalies Nr.
755-BD12KA5FP-E2
|
ROHM Semiconductor
|
LDO įtampos reguliatoriai LDO REG 1.2V 0.5A 3PIN
|
|
1 627Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai RECT 40V 5A SM SKY BARRI
- RB088BGE-40TL
- ROHM Semiconductor
-
1:
1,94 €
-
2 003Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB088BGE-40TL
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai RECT 40V 5A SM SKY BARRI
|
|
2 003Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Lygintuvai 2x4A 200V Hyperfast 23ns FRED Pt
- VS-8CWH02FN-M3
- Vishay Semiconductors
-
1:
1,71 €
-
1 602Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-8CWH02FN-M3
|
Vishay Semiconductors
|
Lygintuvai 2x4A 200V Hyperfast 23ns FRED Pt
|
|
1 602Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Dvipoliai tranzistoriai – BJT 4A 100V 12.5W PNP
- MJD253T4G
- onsemi
-
1:
0,774 €
-
4 206Prieinamumas
|
„Mouser“ Dalies Nr.
863-MJD253T4G
|
onsemi
|
Dvipoliai tranzistoriai – BJT 4A 100V 12.5W PNP
|
|
4 206Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 500
:
2 500
|
|
|
|
|
LDO įtampos reguliatoriai 800mA LDO Linear Reg A 926-LM1117DTX25NO A 926-LM1117DTX25NOPB
- LM1117DT-2.5/NOPB
- Texas Instruments
-
1:
1,65 €
-
1 394Prieinamumas
|
„Mouser“ Dalies Nr.
926-LM1117DT25NOPB
|
Texas Instruments
|
LDO įtampos reguliatoriai 800mA LDO Linear Reg A 926-LM1117DTX25NO A 926-LM1117DTX25NOPB
|
|
1 394Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Linijiniai įtampos reguliatoriai 3-Term Pos Reg 0.5A 1.5V 35V
- NJM78M15SDL1-TE1
- Nisshinbo
-
1:
0,937 €
-
2 426Prieinamumas
|
„Mouser“ Dalies Nr.
513-NJM78M15SDL1-TE1
|
Nisshinbo
|
Linijiniai įtampos reguliatoriai 3-Term Pos Reg 0.5A 1.5V 35V
|
|
2 426Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
IGBT IGBT w/ INTG DIODE 600V 20A
- IKD10N60RATMA1
- Infineon Technologies
-
1:
1,67 €
-
2 293Prieinamumas
|
„Mouser“ Dalies Nr.
726-IKD10N60RATMA1
|
Infineon Technologies
|
IGBT IGBT w/ INTG DIODE 600V 20A
|
|
2 293Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Transistor MOSFET, Nch 650V 4A 3rd Gen, Low Noise
- R6504END3TL1
- ROHM Semiconductor
-
1:
2,07 €
-
1 375Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6504END3TL1
|
ROHM Semiconductor
|
MOSFETs Transistor MOSFET, Nch 650V 4A 3rd Gen, Low Noise
|
|
1 375Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Transistor MOSFET, Nch 650V 9A 3rd Gen, Fast Switch
- R6509KND3TL1
- ROHM Semiconductor
-
1:
2,37 €
-
4 925Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6509KND3TL1
|
ROHM Semiconductor
|
MOSFETs Transistor MOSFET, Nch 650V 9A 3rd Gen, Fast Switch
|
|
4 925Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs TO252 800V 2A N-CH
- R8002CND3FRATL
- ROHM Semiconductor
-
1:
3,41 €
-
2 807Prieinamumas
|
„Mouser“ Dalies Nr.
755-R8002CND3FRATL
|
ROHM Semiconductor
|
MOSFETs TO252 800V 2A N-CH
|
|
2 807Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai RECT 30V 3A SM SKY BARRI
- RB098BGE-30TL
- ROHM Semiconductor
-
1:
2,24 €
-
2 490Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB098BGE-30TL
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai RECT 30V 3A SM SKY BARRI
|
|
2 490Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode 30V, 10A, TO-252, Cathode Common, Low VF
- RBR10BGE30ATL
- ROHM Semiconductor
-
1:
1,89 €
-
1 417Prieinamumas
|
„Mouser“ Dalies Nr.
755-RBR10BGE30ATL
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode 30V, 10A, TO-252, Cathode Common, Low VF
|
|
1 417Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Nch 60V Vdss 15A ID TO-252(DPAK); TO-252
- RD3L150SNFRATL
- ROHM Semiconductor
-
1:
2,05 €
-
1 536Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3L150SNFRATL
|
ROHM Semiconductor
|
MOSFETs Nch 60V Vdss 15A ID TO-252(DPAK); TO-252
|
|
1 536Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Dvipoliai tranzistoriai – BJT 4A 100V 12.5W NPN
- MJD243G
- onsemi
-
1:
0,937 €
-
4 122Prieinamumas
|
„Mouser“ Dalies Nr.
863-MJD243G
|
onsemi
|
Dvipoliai tranzistoriai – BJT 4A 100V 12.5W NPN
|
|
4 122Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 300
|
|
|
|
|
LDO įtampos reguliatoriai ULTRA LOW IQ LDO
- NCV8664DT50RKG
- onsemi
-
1:
1,30 €
-
1 126Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
863-NCV8664DT50RKG
NRND
|
onsemi
|
LDO įtampos reguliatoriai ULTRA LOW IQ LDO
|
|
1 126Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
LDO įtampos reguliatoriai 1.8V 0.8A Positive
- LD1117DT18TR
- STMicroelectronics
-
1:
0,378 €
-
4 470Prieinamumas
|
„Mouser“ Dalies Nr.
511-LD1117DT18-TR
|
STMicroelectronics
|
LDO įtampos reguliatoriai 1.8V 0.8A Positive
|
|
4 470Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Dvipoliai tranzistoriai – BJT PNP -30V -5A 10W Pwr trnstr Low VCE
- 2SAR572D3TL1
- ROHM Semiconductor
-
1:
1,21 €
-
3 008Prieinamumas
|
„Mouser“ Dalies Nr.
755-2SAR572D3TL1
|
ROHM Semiconductor
|
Dvipoliai tranzistoriai – BJT PNP -30V -5A 10W Pwr trnstr Low VCE
|
|
3 008Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Transistor MOSFET, Nch 800V 7A 1st Gen, for Auto
- R8007AND3FRATL
- ROHM Semiconductor
-
1:
5,54 €
-
4 742Prieinamumas
|
„Mouser“ Dalies Nr.
755-R8007AND3FRATL
|
ROHM Semiconductor
|
MOSFETs Transistor MOSFET, Nch 800V 7A 1st Gen, for Auto
|
|
4 742Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Nch 200V 5A TO-252 (DPAK)
- RD3T050CNTL1
- ROHM Semiconductor
-
1:
1,72 €
-
2 079Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3T050CNTL1
|
ROHM Semiconductor
|
MOSFETs Nch 200V 5A TO-252 (DPAK)
|
|
2 079Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
IGBT 600 V, 15 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
- IKD15N60RC2ATMA1
- Infineon Technologies
-
1:
1,77 €
-
1 689Prieinamumas
|
„Mouser“ Dalies Nr.
726-IKD15N60RC2ATMA1
|
Infineon Technologies
|
IGBT 600 V, 15 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
|
|
1 689Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Transistor MOSFET, Nch 650V 9A 3rd Gen, Low Noise
- R6509END3TL1
- ROHM Semiconductor
-
1:
2,74 €
-
6 983Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6509END3TL1
|
ROHM Semiconductor
|
MOSFETs Transistor MOSFET, Nch 650V 9A 3rd Gen, Low Noise
|
|
6 983Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode 40V, 10A, TO-252, Cathode Common, Low VF
- RBR10BGE40ATL
- ROHM Semiconductor
-
1:
1,84 €
-
1 220Prieinamumas
|
„Mouser“ Dalies Nr.
755-RBR10BGE40ATL
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode 40V, 10A, TO-252, Cathode Common, Low VF
|
|
1 220Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Nch 200V 7.5A TO-252 (DPAK)
- RD3T075CNTL1
- ROHM Semiconductor
-
1:
1,74 €
-
2 379Prieinamumas
|
„Mouser“ Dalies Nr.
755-RD3T075CNTL1
|
ROHM Semiconductor
|
MOSFETs Nch 200V 7.5A TO-252 (DPAK)
|
|
2 379Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Lygintuvai Hyperfast 4A 200V 23ns
- VS-4EWH02FNTR-M3
- Vishay Semiconductors
-
1:
1,37 €
-
2 440Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-4EWH02FNTR-M3
|
Vishay Semiconductors
|
Lygintuvai Hyperfast 4A 200V 23ns
|
|
2 440Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|