|
|
SiC SCHOTTKY diodai RECT 1.2KV 32A RDL SIC SKY
- TRS20N120HB,S1Q
- Toshiba
-
1:
9,74 €
-
24Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
757-TRS20N120HBS1Q
Naujas Produktas
|
Toshiba
|
SiC SCHOTTKY diodai RECT 1.2KV 32A RDL SIC SKY
|
|
24Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 1200 V/30 A SiC Schottky Barrier Diode, TO-247
- TRS30N120HB,S1Q
- Toshiba
-
1:
14,84 €
-
28Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
757-TRS30N120HBS1Q
Naujas Produktas
|
Toshiba
|
SiC SCHOTTKY diodai 1200 V/30 A SiC Schottky Barrier Diode, TO-247
|
|
28Prieinamumas
|
|
|
14,84 €
|
|
|
10,08 €
|
|
|
8,38 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT NGW30T65M3DFP/SOT429/TO247-3L
- NGW30T65M3DFPQ
- Nexperia
-
1:
3,56 €
-
247Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
771-NGW30T65M3DFPQ
Naujas Produktas
|
Nexperia
|
IGBT NGW30T65M3DFP/SOT429/TO247-3L
|
|
247Prieinamumas
|
|
|
3,56 €
|
|
|
2,34 €
|
|
|
2,34 €
|
|
|
1,36 €
|
|
|
1,31 €
|
|
Min.: 1
Daugkart.: 1
:
30
|
|
|
|
|
IGBT NGW40T65H3DFP/SOT429/TO247-3L
- NGW40T65H3DFPQ
- Nexperia
-
1:
4,08 €
-
226Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
771-NGW40T65H3DFPQ
Naujas Produktas
|
Nexperia
|
IGBT NGW40T65H3DFP/SOT429/TO247-3L
|
|
226Prieinamumas
|
|
|
4,08 €
|
|
|
2,69 €
|
|
|
2,69 €
|
|
|
1,58 €
|
|
|
1,56 €
|
|
Min.: 1
Daugkart.: 1
:
30
|
|
|
|
|
IGBT NGW50T65M3DFP/SOT429/TO247-3L
- NGW50T65M3DFPQ
- Nexperia
-
1:
5,20 €
-
244Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
771-NGW50T65M3DFPQ
Naujas Produktas
|
Nexperia
|
IGBT NGW50T65M3DFP/SOT429/TO247-3L
|
|
244Prieinamumas
|
|
|
5,20 €
|
|
|
3,48 €
|
|
|
3,48 €
|
|
|
2,15 €
|
|
Min.: 1
Daugkart.: 1
:
30
|
|
|
|
|
IGBT NGW75T65H3DFP/SOT429/TO247-3L
- NGW75T65H3DFPQ
- Nexperia
-
1:
5,86 €
-
243Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
771-NGW75T65H3DFPQ
Naujas Produktas
|
Nexperia
|
IGBT NGW75T65H3DFP/SOT429/TO247-3L
|
|
243Prieinamumas
|
|
|
5,86 €
|
|
|
3,94 €
|
|
|
3,94 €
|
|
|
2,52 €
|
|
Min.: 1
Daugkart.: 1
:
30
|
|
|
|
|
SiC MOSFET 1700V 1000mR, TO247-3L, Industrial Grade
- AMR1k0V170E1
- APC-E
-
1:
4,74 €
-
300Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
896-AMR1K0V170E1
Naujas Produktas
|
APC-E
|
SiC MOSFET 1700V 1000mR, TO247-3L, Industrial Grade
|
|
300Prieinamumas
|
|
|
4,74 €
|
|
|
2,66 €
|
|
|
2,13 €
|
|
|
1,82 €
|
|
|
1,68 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 1200V 20A, TO247-3L, Industrial Grade
- ASA020V120E5
- APC-E
-
1:
5,62 €
-
244Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
896-ASA020V120E5
Naujas Produktas
|
APC-E
|
SiC SCHOTTKY diodai 1200V 20A, TO247-3L, Industrial Grade
|
|
244Prieinamumas
|
|
|
5,62 €
|
|
|
3,21 €
|
|
|
2,65 €
|
|
|
2,25 €
|
|
|
2,12 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 1200V 30A, TO247-3L, Industrial Grade
- ASA030V120E5
- APC-E
-
1:
7,08 €
-
274Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
896-ASA030V120E5
Naujas Produktas
|
APC-E
|
SiC SCHOTTKY diodai 1200V 30A, TO247-3L, Industrial Grade
|
|
274Prieinamumas
|
|
|
7,08 €
|
|
|
3,88 €
|
|
|
3,56 €
|
|
|
3,05 €
|
|
|
2,89 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 1200V 40A, TO247-3L, Industrial Grade
- ASA040V120E5
- APC-E
-
1:
7,73 €
-
271Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
896-ASA040V120E5
Naujas Produktas
|
APC-E
|
SiC SCHOTTKY diodai 1200V 40A, TO247-3L, Industrial Grade
|
|
271Prieinamumas
|
|
|
7,73 €
|
|
|
4,66 €
|
|
|
3,91 €
|
|
|
3,37 €
|
|
|
3,35 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT 650V/40A Insulated Gate Bipolar Transistor
- PTGH4065S1_T0_00201
- Panjit
-
1:
3,60 €
-
834Prieinamumas
|
„Mouser“ Dalies Nr.
241-PTGH4065S1T00201
|
Panjit
|
IGBT 650V/40A Insulated Gate Bipolar Transistor
|
|
834Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
6,16 €
-
518Prieinamumas
|
„Mouser“ Dalies Nr.
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBT Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
518Prieinamumas
|
|
|
6,16 €
|
|
|
4,15 €
|
|
|
3,01 €
|
|
|
2,98 €
|
|
|
2,70 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
- STWA65N023M9
- STMicroelectronics
-
1:
13,47 €
-
253Prieinamumas
|
„Mouser“ Dalies Nr.
511-STWA65N023M9
|
STMicroelectronics
|
MOSFETs N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
|
|
253Prieinamumas
|
|
|
13,47 €
|
|
|
7,62 €
|
|
|
7,30 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT IXYH40N120B4H1
- IXYH40N120B4H1
- IXYS
-
1:
12,93 €
-
321Prieinamumas
|
„Mouser“ Dalies Nr.
576-IXYH40N120B4H1
|
IXYS
|
IGBT IXYH40N120B4H1
|
|
321Prieinamumas
|
|
|
12,93 €
|
|
|
7,89 €
|
|
|
7,25 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT IXYH40N120C4H1
- IXYH40N120C4H1
- IXYS
-
1:
12,93 €
-
363Prieinamumas
|
„Mouser“ Dalies Nr.
576-IXYH40N120C4H1
|
IXYS
|
IGBT IXYH40N120C4H1
|
|
363Prieinamumas
|
|
|
12,93 €
|
|
|
7,89 €
|
|
|
7,24 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT IXYH55N120B4H1
- IXYH55N120B4H1
- IXYS
-
1:
17,39 €
-
315Prieinamumas
|
„Mouser“ Dalies Nr.
576-IXYH55N120B4H1
|
IXYS
|
IGBT IXYH55N120B4H1
|
|
315Prieinamumas
|
|
|
17,39 €
|
|
|
10,89 €
|
|
|
10,61 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT IGBT Discrete 650V, 40A, Medium speed switching in TO-247-3L
- BIDW40N65ES5
- Bourns
-
1:
5,01 €
-
2 830Prieinamumas
|
„Mouser“ Dalies Nr.
652-BIDW40N65ES5
|
Bourns
|
IGBT IGBT Discrete 650V, 40A, Medium speed switching in TO-247-3L
|
|
2 830Prieinamumas
|
|
|
5,01 €
|
|
|
2,84 €
|
|
|
2,39 €
|
|
|
2,27 €
|
|
|
2,24 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT IGBT Discrete 650V, 40A, High speed switching in TO-247-3L
- BIDW40N65H5
- Bourns
-
1:
5,01 €
-
2 967Prieinamumas
|
„Mouser“ Dalies Nr.
652-BIDW40N65H5
|
Bourns
|
IGBT IGBT Discrete 650V, 40A, High speed switching in TO-247-3L
|
|
2 967Prieinamumas
|
|
|
5,01 €
|
|
|
2,84 €
|
|
|
2,39 €
|
|
|
2,24 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L
- BIDW75N65ES5
- Bourns
-
1:
7,01 €
-
2 773Prieinamumas
|
„Mouser“ Dalies Nr.
652-BIDW75N65ES5
|
Bourns
|
IGBT IGBT Discrete 650V, 75A, Medium speed switching in TO-247-3L
|
|
2 773Prieinamumas
|
|
|
7,01 €
|
|
|
4,06 €
|
|
|
3,41 €
|
|
|
3,24 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT 1200 V, 120 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package
- IKQ120N120CS7XKSA1
- Infineon Technologies
-
1:
9,41 €
-
531Prieinamumas
|
„Mouser“ Dalies Nr.
726-IKQ120N120CS7XKS
|
Infineon Technologies
|
IGBT 1200 V, 120 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package
|
|
531Prieinamumas
|
|
|
9,41 €
|
|
|
6,93 €
|
|
|
5,93 €
|
|
|
5,56 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT IGBT PRODUCTS
- IKW40N120H3FKSA1
- Infineon Technologies
-
1:
6,53 €
-
523Prieinamumas
|
„Mouser“ Dalies Nr.
726-IKW40N120H3FKSA1
|
Infineon Technologies
|
IGBT IGBT PRODUCTS
|
|
523Prieinamumas
|
|
|
6,53 €
|
|
|
4,21 €
|
|
|
3,54 €
|
|
|
3,20 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R015M2HXKSA1
- Infineon Technologies
-
1:
16,05 €
-
235Prieinamumas
-
480Tikėtina 2026-09-07
|
„Mouser“ Dalies Nr.
726-IMW65R015M2HXKSA
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
235Prieinamumas
480Tikėtina 2026-09-07
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R040M2HXKSA1
- Infineon Technologies
-
1:
9,08 €
-
346Prieinamumas
-
240Tikėtina 2027-06-10
|
„Mouser“ Dalies Nr.
726-IMW65R040M2HXKSA
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
346Prieinamumas
240Tikėtina 2027-06-10
|
|
|
9,08 €
|
|
|
5,37 €
|
|
|
4,56 €
|
|
|
4,45 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R050M2HXKSA1
- Infineon Technologies
-
1:
7,80 €
-
884Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMW65R050M2HXKSA
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
884Prieinamumas
|
|
|
7,80 €
|
|
|
4,98 €
|
|
|
4,21 €
|
|
|
4,06 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET SIC DISCRETE
- IMWH170R1K0M1XKSA1
- Infineon Technologies
-
1:
5,73 €
-
397Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMWH170R1K0M1XKS
|
Infineon Technologies
|
SiC MOSFET SIC DISCRETE
|
|
397Prieinamumas
|
|
|
5,73 €
|
|
|
3,59 €
|
|
|
2,77 €
|
|
|
2,45 €
|
|
|
2,18 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Lietuva
