|
|
IGBT FS7 1200V 25A SCR IGBT TO247 3L COPACK
- FGHL25T120RWD
- onsemi
-
1:
5,13 €
-
3 174Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-FGHL25T120RWD
Naujas Produktas
|
onsemi
|
IGBT FS7 1200V 25A SCR IGBT TO247 3L COPACK
|
|
3 174Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 45
|
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 32MOHM 650V M3S
- NTHL032N065M3S
- onsemi
-
1:
9,27 €
-
2 721Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-NTHL032N065M3S
Naujas Produktas
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 32MOHM 650V M3S
|
|
2 721Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 45
|
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 23MOHM 650V M3S
- NVHL023N065M3S
- onsemi
-
1:
14,40 €
-
450Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-NVHL023N065M3S
Naujas Produktas
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 23MOHM 650V M3S
|
|
450Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 45
|
|
|
|
|
IGBT 650V/75A Insulated Gate Bipolar Transistor
- PTGH7565S1_T0_00201
- Panjit
-
1:
8,78 €
-
900Prieinamumas
|
„Mouser“ Dalies Nr.
241-PTGH7565S1T00201
|
Panjit
|
IGBT 650V/75A Insulated Gate Bipolar Transistor
|
|
900Prieinamumas
|
|
|
8,78 €
|
|
|
6,21 €
|
|
|
5,16 €
|
|
|
4,30 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT IXYH30N120C4H1
- IXYH30N120C4H1
- IXYS
-
1:
11,23 €
-
288Prieinamumas
|
„Mouser“ Dalies Nr.
576-IXYH30N120C4H1
|
IXYS
|
IGBT IXYH30N120C4H1
|
|
288Prieinamumas
|
|
|
11,23 €
|
|
|
6,77 €
|
|
|
5,94 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
- BIDW75N65EH5
- Bourns
-
1:
7,01 €
-
5 809Prieinamumas
|
„Mouser“ Dalies Nr.
652-BIDW75N65EH5
|
Bourns
|
IGBT IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
|
|
5 809Prieinamumas
|
|
|
7,01 €
|
|
|
4,06 €
|
|
|
3,41 €
|
|
|
3,24 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs POWER MOSFET TRANSISTOR DTMOS TO-247 PD=211W F=1MHZ
- TK080N60Z1,S1F
- Toshiba
-
1:
6,51 €
-
149Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
757-TK080N60Z1S1F
Naujas Produktas
|
Toshiba
|
MOSFETs POWER MOSFET TRANSISTOR DTMOS TO-247 PD=211W F=1MHZ
|
|
149Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT NGW60T65M3DFP/SOT429/TO247-3L
- NGW60T65M3DFPQ
- Nexperia
-
1:
5,43 €
-
239Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
771-NGW60T65M3DFPQ
Naujas Produktas
|
Nexperia
|
IGBT NGW60T65M3DFP/SOT429/TO247-3L
|
|
239Prieinamumas
|
|
|
5,43 €
|
|
|
3,64 €
|
|
|
3,64 €
|
|
|
2,28 €
|
|
Min.: 1
Daugkart.: 1
:
30
|
|
|
|
|
IGBT NGW75T65M3DFP/SOT429/TO247-3L
- NGW75T65M3DFPQ
- Nexperia
-
1:
5,86 €
-
240Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
771-NGW75T65M3DFPQ
Naujas Produktas
|
Nexperia
|
IGBT NGW75T65M3DFP/SOT429/TO247-3L
|
|
240Prieinamumas
|
|
|
5,86 €
|
|
|
3,94 €
|
|
|
3,94 €
|
|
|
2,53 €
|
|
Min.: 1
Daugkart.: 1
:
30
|
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW95R060PFD7XKSA1
- Infineon Technologies
-
1:
12,96 €
-
940Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW95R060PFD7XKS
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
940Prieinamumas
|
|
|
12,96 €
|
|
|
7,89 €
|
|
|
7,07 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCR RECT 1.2KV 100A SCR AUTO
- VS-100TPS12LHM3
- Vishay
-
1:
8,92 €
-
424Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-100TPS12LHM3
|
Vishay
|
SCR RECT 1.2KV 100A SCR AUTO
|
|
424Prieinamumas
|
|
|
8,92 €
|
|
|
5,63 €
|
|
|
4,55 €
|
|
|
4,51 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs Power MOSFET N-Channel
- TK39N60W5,S1VF
- Toshiba
-
1:
8,08 €
-
2 346Prieinamumas
-
1 200Pagal užsakymą
|
„Mouser“ Dalies Nr.
757-TK39N60W5S1VF
|
Toshiba
|
MOSFETs Power MOSFET N-Channel
|
|
2 346Prieinamumas
1 200Pagal užsakymą
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGWA30M65DF2AG
- STMicroelectronics
-
1:
3,82 €
-
540Prieinamumas
-
600Tikėtina 2027-08-06
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
511-STGWA30M65DF2AG
Naujas Produktas
|
STMicroelectronics
|
IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
540Prieinamumas
600Tikėtina 2027-08-06
|
|
|
3,82 €
|
|
|
2,62 €
|
|
|
1,95 €
|
|
|
1,63 €
|
|
|
1,42 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC
- CDMS24720-170 SL PBFREE
- Central Semiconductor
-
1:
92,11 €
-
30Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
610-CDMS24720-170SL
Naujas Produktas
|
Central Semiconductor
|
SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC
|
|
30Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT IGBT7 PR7 optimized for boost PFC stage like RAC/CAC and HVAC applications
- IKWH30N67PR7XKSA1
- Infineon Technologies
-
1:
3,09 €
-
154Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IKWH30N67PR7XKSA
Naujas Produktas
|
Infineon Technologies
|
IGBT IGBT7 PR7 optimized for boost PFC stage like RAC/CAC and HVAC applications
|
|
154Prieinamumas
|
|
|
3,09 €
|
|
|
1,68 €
|
|
|
1,37 €
|
|
|
1,14 €
|
|
|
1,07 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT IGBT7 PR7 optimized for boost PFC stage like RAC/CAC and HVAC applications
- IKWH40N67PR7XKSA1
- Infineon Technologies
-
1:
3,34 €
-
497Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IKWH40N67PR7XKSA
Naujas Produktas
|
Infineon Technologies
|
IGBT IGBT7 PR7 optimized for boost PFC stage like RAC/CAC and HVAC applications
|
|
497Prieinamumas
|
|
|
3,34 €
|
|
|
1,82 €
|
|
|
1,49 €
|
|
|
1,24 €
|
|
|
1,19 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT IGBT7 PR7 optimized for boost PFC stage like RAC/CAC and HVAC applications
- IKWH50N67PR7XKSA1
- Infineon Technologies
-
1:
3,58 €
-
536Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IKWH50N67PR7XKSA
Naujas Produktas
|
Infineon Technologies
|
IGBT IGBT7 PR7 optimized for boost PFC stage like RAC/CAC and HVAC applications
|
|
536Prieinamumas
|
|
|
3,58 €
|
|
|
1,97 €
|
|
|
1,61 €
|
|
|
1,50 €
|
|
|
1,30 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT IGBT7 PR7 optimized for boost PFC stage like RAC/CAC and HVAC applications
- IKWH60N67PR7XKSA1
- Infineon Technologies
-
1:
3,73 €
-
348Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IKWH60N67PR7XKSA
Naujas Produktas
|
Infineon Technologies
|
IGBT IGBT7 PR7 optimized for boost PFC stage like RAC/CAC and HVAC applications
|
|
348Prieinamumas
|
|
|
3,73 €
|
|
|
2,06 €
|
|
|
1,69 €
|
|
|
1,41 €
|
|
|
1,38 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT IGBT7 PR7 optimized for boost PFC stage like RAC/CAC and HVAC applications
- IKWH70N67PR7XKSA1
- Infineon Technologies
-
1:
3,79 €
-
328Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IKWH70N67PR7XKSA
Naujas Produktas
|
Infineon Technologies
|
IGBT IGBT7 PR7 optimized for boost PFC stage like RAC/CAC and HVAC applications
|
|
328Prieinamumas
|
|
|
3,79 €
|
|
|
2,09 €
|
|
|
1,81 €
|
|
|
1,44 €
|
|
|
1,41 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs N-ch MOSFET, 600 V, 0.024 Ohm10V, TO-247, DTMOS6
- TK024N60Z1,S1F
- Toshiba
-
1:
12,02 €
-
51Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
757-TK024N60Z1S1F
Naujas Produktas
|
Toshiba
|
MOSFETs N-ch MOSFET, 600 V, 0.024 Ohm10V, TO-247, DTMOS6
|
|
51Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-247 PD=297W F=1MHZ
- TK040N60Z1,S1F
- Toshiba
-
1:
12,01 €
-
107Prieinamumas
-
270Tikėtina 2026-08-21
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
757-TK040N60Z1S1F
Naujas Produktas
|
Toshiba
|
MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-247 PD=297W F=1MHZ
|
|
107Prieinamumas
270Tikėtina 2026-08-21
|
|
|
12,01 €
|
|
|
8,41 €
|
|
|
7,32 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs POWER MOSFET TRANSISTOR TO-247 PD=242W F=1MHZ
- TK063N60Z1,S1F
- Toshiba
-
1:
6,54 €
-
53Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
757-TK063N60Z1S1F
Naujas Produktas
|
Toshiba
|
MOSFETs POWER MOSFET TRANSISTOR TO-247 PD=242W F=1MHZ
|
|
53Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs TO247 650V 1.69A N-CH
- TK068N65Z5,S1F
- Toshiba
-
1:
8,84 €
-
85Prieinamumas
-
60Tikėtina 2026-11-25
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
757-TK068N65Z5S1F
Naujas Produktas
|
Toshiba
|
MOSFETs TO247 650V 1.69A N-CH
|
|
85Prieinamumas
60Tikėtina 2026-11-25
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs POWER MOSFET TRANSISTOR DTMOS TO-247 PD=150W F=1MHZ
- TK125N60Z1,S1F
- Toshiba
-
1:
5,23 €
-
135Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
757-TK125N60Z1S1F
Naujas Produktas
|
Toshiba
|
MOSFETs POWER MOSFET TRANSISTOR DTMOS TO-247 PD=150W F=1MHZ
|
|
135Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai RECT 1.2KV 18A RDL SIC SKY
- TRS10N120HB,S1Q
- Toshiba
-
1:
6,73 €
-
36Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
757-TRS10N120HBS1Q
Naujas Produktas
|
Toshiba
|
SiC SCHOTTKY diodai RECT 1.2KV 18A RDL SIC SKY
|
|
36Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Lietuva
