CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

Results: 12
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Infineon Technologies GaN FETs HV GAN DISCRETES
Datasheet
4 511In Stock
Min.: 1
Mult.: 1
: 5 000

SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 2.6 nC - 55 C + 150 C 46 W Enhancement
Infineon Technologies GaN FETs HV GAN DISCRETES
Datasheet
4 825In Stock
Min.: 1
Mult.: 1
: 5 000

SMD/SMT HEMT 1 Channel 650 V 9.2 A 240 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 33 W Enhancement
Infineon Technologies GaN FETs HV GAN DISCRETES
Datasheet
4 726In Stock
Min.: 1
Mult.: 1
: 5 000

SMD/SMT HEMT 1 Channel 650 V 7.2 A 330 mOhms - 10 V 1.6 V 1.4 nC - 55 C + 150 C 28 W Enhancement
Infineon Technologies GaN FETs HV GAN DISCRETES
Datasheet
1 173In Stock
Min.: 1
Mult.: 1
: 1 800

SMD/SMT HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 125 W
Infineon Technologies GaN FETs HV GAN DISCRETES
Datasheet
1 495In Stock
Min.: 1
Mult.: 1
: 1 800

SMD/SMT HEMT 1 Channel 650 V 15 A 140 mOhms - 10 V 1.6 V 3.4 nC - 40 C + 150 C Enhancement
Infineon Technologies GaN FETs HV GAN DISCRETES
Datasheet
878In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT HEMT 1 Channel 650 V 61 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 181 W Enhancement
Infineon Technologies GaN FETs HV GAN DISCRETES
Datasheet
482In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 132 W Enhancement
Infineon Technologies GaN FETs HV GAN DISCRETES
Datasheet
1 268In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT HEMT 1 Channel 650 V 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 104 W Enhancement
Infineon Technologies GaN FETs HV GAN DISCRETES
Datasheet
613In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 83 W Enhancement
Infineon Technologies GaN FETs HV GAN DISCRETES
Datasheet
5In Stock
3 600Expected 12/16/2026
Min.: 1
Mult.: 1
: 1 800

SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 104 W Enhancement
Infineon Technologies GaN FETs HV GAN DISCRETES
Datasheet
5 493On Order
Min.: 1
Mult.: 1
: 1 800

SMD/SMT HEMT 1 Channel 650 V 67 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 219 W Enhancement
Infineon Technologies GaN FETs HV GAN DISCRETES
Datasheet
3 540Expected 8/27/2026
Min.: 1
Mult.: 1
: 1 800

SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C Enhancement