Results: 37
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Infineon Technologies MOSFETs CONSUMER 200In Stock
9 000Expected 11/26/2026
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 600 V 6 A 490 mOhms 20 V 3 V 9 nC - 40 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFETs CONSUMER 865In Stock
12 000Expected 10/22/2026
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 700 V 3 A 1.64 Ohms 16 V 2.5 V 3.8 nC - 40 C + 150 C 6 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs N-Ch 500V 13A TO220-3 CoolMOS CE 98In Stock
500Expected 11/12/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 13 A 280 mOhms 20 V 2.5 V 32.6 nC - 55 C + 150 C 92 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs CONSUMER 1 737In Stock
Min.: 1
Mult.: 1
: 3 000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 600 V 5 A 3.51 Ohms 20 V 2.5 V 9.4 nC - 40 C + 150 C 5 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs N-Ch 650V 20.7A TO220-3 818In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.7 A 190 mOhms 20 V 2.1 V 87 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_LEGACY
2 500Expected 4/1/2027
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 900 V 5.1 A 1.2 Ohms 20 V 3 V 28 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs N-Ch 600V 10.4A TO220FP-3
990Expected 10/29/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms 20 V 3.5 V 44 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs CONSUMER
2 500Expected 4/22/2027
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12.5 A 300 mOhms 16 V 2.5 V 16.4 nC - 40 C + 150 C 26.5 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs CONSUMER
2 462Expected 9/28/2026
Min.: 1
Mult.: 1
: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9.9 A 540 mOhms 20 V 2.5 V 20.5 nC - 40 C + 150 C 82 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs N-Ch 650V TO-220FP-3 Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 10.1 A 650 mOhms 20 V 3 V 23 nC - 40 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_LEGACY Non-Stocked Lead-Time 17 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-220FP-3 N-Channel 1 Channel CoolMOS Tube
Infineon Technologies MOSFETs LOW POWER_LEGACY Non-Stocked Lead-Time 13 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 5.1 A 1.2 Ohms 20 V 3.5 V 28 nC - 55 C + 150 C 83 W Enhancement Tube