High-Density SiC Power Modules

ROHM Semiconductor High-Density Silicon Carbide (SiC) Power Modules are designed to support high-efficiency power conversion in automotive and industrial applications. The lineup includes several package platforms such as TRCDRIVE pack™, HSDIP20, and DOT-247, each optimized for different power classes and system requirements. These packages integrate SiC MOSFETs into compact module structures that enable high power density, stable switching performance, and efficient thermal management. Depending on the package, configurations such as 2-in-1, 4-in-1, and 6-in-1 are available, providing flexibility for a wide range of power conversion and motor drive applications.

Rezultatai: 6
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ROHM Semiconductor MOSFET moduliai 1200V, 70A, Full-bridge, Automotive / Industrial Grade SiC Power Module 60Prieinamumas
Min.: 1
Daugkart.: 1
SiC 4 Channel 1.2 kV 70 A 25 mOhms - 4 V, + 21 V 4.8 V - 40 C + 175 C 385 W Bulk
ROHM Semiconductor MOSFET moduliai 1200V, 106A, Half-bridge, SiC Power Module 223Prieinamumas
Min.: 1
Daugkart.: 1
SiC DOT-247-7 N-Channel 2 Channel 1.2 kV 106 A 15 mOhms - 4 V, + 21 V 4.8 V - 40 C + 175 C 361 W Tube
ROHM Semiconductor MOSFET moduliai half-bridge module consisting of SiC-MOSFETs, suitable for Automotive application, Inverter, Converter, and (Hybrid) electrical vehicles EV/HEV. 80Prieinamumas
Min.: 1
Daugkart.: 1
SiC Press Fit N-Channel 2 Channel 1.2 kV 394 A 8.6 mOhms - 4 V, + 21 V 4.8 V - 40 C + 175 C 1.667 kW Bulk
ROHM Semiconductor MOSFET moduliai 750V, 47A, 3-Phase-bridge, Automotive / Industrial Grade SiC Power Module 60Prieinamumas
Min.: 1
Daugkart.: 1
SiC HSDIP-20 N-Channel 6 Channel 750 V 47 A 37 mOhms - 4 V, + 21 V 4.8 V - 40 C + 175 C 227 W Bulk
ROHM Semiconductor MOSFET moduliai 750V, 90A, Full-bridge, Automotive / Industrial Grade SiC Power Module 56Prieinamumas
Min.: 1
Daugkart.: 1
SiC HSDIP-20 N-Channel 4 Channel 750 V 90 A 19 mOhms - 4 V, + 21 V 4.8 V - 40 C + 175 C 385 W Bulk
ROHM Semiconductor MOSFET moduliai 750V, 90A, 3-Phase-bridge, Automotive / Industrial Grade SiC Power Module 60Prieinamumas
Min.: 1
Daugkart.: 1
SiC HSDIP-20 N-Channel 6 Channel 750 V 90 A 19 mOhms - 4 V, + 21 V 4.8 V - 40 C + 175 C 385 W Bulk