|
|
MOSFETs N-Ch 650V 11.4A D2PAK-2
- IPB65R310CFDAATMA1
- Infineon Technologies
-
1:
3,05 €
-
2 513Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB65R310CFDAATM
|
Infineon Technologies
|
MOSFETs N-Ch 650V 11.4A D2PAK-2
|
|
2 513Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
11.4 A
|
280 mOhms
|
20 V
|
3.5 V
|
41 nC
|
- 40 C
|
+ 150 C
|
104.2 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 600V 31A D2PAK-2 CoolMOS CPA
- IPB60R099CPAATMA1
- Infineon Technologies
-
1:
7,54 €
-
465Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB60R099CPAATMA
|
Infineon Technologies
|
MOSFETs N-Ch 600V 31A D2PAK-2 CoolMOS CPA
|
|
465Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
90 mOhms
|
20 V
|
2.5 V
|
80 nC
|
- 40 C
|
+ 150 C
|
255 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 650V 99.6A D2PAK-2
- IPB65R110CFDAATMA1
- Infineon Technologies
-
1:
6,14 €
-
1 448Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB65R110CFDAATM
|
Infineon Technologies
|
MOSFETs N-Ch 650V 99.6A D2PAK-2
|
|
1 448Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
31.2 A
|
99 mOhms
|
20 V
|
3.5 V
|
118 nC
|
- 40 C
|
+ 150 C
|
277.8 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 600V 60A TO247-3 CoolMOS CPA
- IPW60R045CPA
- Infineon Technologies
-
1:
14,68 €
-
468Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW60R045CPA
|
Infineon Technologies
|
MOSFETs N-Ch 600V 60A TO247-3 CoolMOS CPA
|
|
468Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
60 A
|
45 mOhms
|
20 V
|
3 V
|
190 nC
|
- 40 C
|
+ 150 C
|
431 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 31.2A TO247-3
- IPW65R110CFDA
- Infineon Technologies
-
1:
7,21 €
-
529Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW65R110CFDA
|
Infineon Technologies
|
MOSFETs N-Ch 650V 31.2A TO247-3
|
|
529Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
31.2 A
|
99 mOhms
|
20 V
|
3.5 V
|
118 nC
|
- 40 C
|
+ 150 C
|
277.8 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 6A D2PAK-2
- IPB65R660CFDAATMA1
- Infineon Technologies
-
1:
2,36 €
-
913Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB65R660CFDAATM
|
Infineon Technologies
|
MOSFETs N-Ch 650V 6A D2PAK-2
|
|
913Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
6 A
|
594 mOhms
|
20 V
|
3.5 V
|
20 nC
|
- 40 C
|
+ 150 C
|
62.5 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs AUTOMOTIVE_COOLMOS
- IPW60R099CPA
- Infineon Technologies
-
1:
8,32 €
-
267Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW60R099CPA
|
Infineon Technologies
|
MOSFETs AUTOMOTIVE_COOLMOS
|
|
267Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
90 mOhms
|
20 V
|
2.5 V
|
80 nC
|
- 40 C
|
+ 150 C
|
255 W
|
Enhancement
|
AEC-Q101
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 600V 31A D2PAK-2 CoolMOS CPA
- IPB60R099CPA
- Infineon Technologies
-
1:
7,77 €
-
2 186Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB60R099CPA
|
Infineon Technologies
|
MOSFETs N-Ch 600V 31A D2PAK-2 CoolMOS CPA
|
|
2 186Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
90 mOhms
|
20 V
|
2.5 V
|
80 nC
|
- 40 C
|
+ 150 C
|
255 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 650V 57.2A D2PAK-2
- IPB65R190CFDA
- Infineon Technologies
-
1:
4,40 €
-
982Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB65R190CFDA
|
Infineon Technologies
|
MOSFETs N-Ch 650V 57.2A D2PAK-2
|
|
982Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
17.5 A
|
171 mOhms
|
20 V
|
3.5 V
|
68 nC
|
- 40 C
|
+ 150 C
|
151 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs AUTOMOTIVE_COOLMOS
- IPW60R099CPAFKSA1
- Infineon Technologies
-
1:
8,51 €
-
486Prieinamumas
|
„Mouser“ Dalies Nr.
726-PW60R099CPAFKSA1
|
Infineon Technologies
|
MOSFETs AUTOMOTIVE_COOLMOS
|
|
486Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
90 mOhms
|
20 V
|
2.5 V
|
80 nC
|
- 40 C
|
+ 150 C
|
255 W
|
Enhancement
|
AEC-Q101
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 31.2A TO220-3
- IPP65R110CFDAAKSA1
- Infineon Technologies
-
1:
6,67 €
-
1 942Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPP65R110CFDAAKS
|
Infineon Technologies
|
MOSFETs N-Ch 650V 31.2A TO220-3
|
|
1 942Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
31.2 A
|
110 mOhms
|
20 V
|
3 V
|
118 nC
|
- 40 C
|
+ 150 C
|
277.8 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 57.2A D2PAK-2
- IPB65R190CFDAATMA1
- Infineon Technologies
-
1:
4,14 €
-
775Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB65R190CFDAATM
|
Infineon Technologies
|
MOSFETs N-Ch 650V 57.2A D2PAK-2
|
|
775Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
17.5 A
|
171 mOhms
|
20 V
|
3.5 V
|
68 nC
|
- 40 C
|
+ 150 C
|
151 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 650V 11.4A D2PAK-2
- IPB65R310CFDA
- Infineon Technologies
-
1:
3,11 €
-
10Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB65R310CFDA
|
Infineon Technologies
|
MOSFETs N-Ch 650V 11.4A D2PAK-2
|
|
10Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
11.4 A
|
280 mOhms
|
20 V
|
3.5 V
|
41 nC
|
- 40 C
|
+ 150 C
|
104.2 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 650V 63.3A TO247-3
- IPW65R048CFDA
- Infineon Technologies
-
1:
10,11 €
-
178Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW65R048CFDA
|
Infineon Technologies
|
MOSFETs N-Ch 650V 63.3A TO247-3
|
|
178Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
63.3 A
|
43 mOhms
|
20 V
|
3.5 V
|
270 nC
|
- 40 C
|
+ 150 C
|
500 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 43.3A TO247-3
- IPW65R080CFDA
- Infineon Technologies
-
1:
7,98 €
-
272Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW65R080CFDA
|
Infineon Technologies
|
MOSFETs N-Ch 650V 43.3A TO247-3
|
|
272Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
43.3 A
|
72 mOhms
|
20 V
|
3.5 V
|
161 nC
|
- 40 C
|
+ 150 C
|
391 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 31.2A TO247-3
- IPW65R110CFDAFKSA1
- Infineon Technologies
-
1:
7,21 €
-
13Prieinamumas
-
480Tikėtina 2027-06-17
|
„Mouser“ Dalies Nr.
726-IPW65R110CFDAFKS
|
Infineon Technologies
|
MOSFETs N-Ch 650V 31.2A TO247-3
|
|
13Prieinamumas
480Tikėtina 2027-06-17
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
31.2 A
|
99 mOhms
|
20 V
|
3.5 V
|
118 nC
|
- 40 C
|
+ 150 C
|
277.8 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 22.4A TO247-3
- IPW65R150CFDAFKSA1
- Infineon Technologies
-
1:
5,00 €
-
371Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW65R150CFDAFKS
|
Infineon Technologies
|
MOSFETs N-Ch 650V 22.4A TO247-3
|
|
371Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
22.4 A
|
150 mOhms
|
20 V
|
3.5 V
|
86 nC
|
- 40 C
|
+ 150 C
|
195.3 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 43.3A TO247-3
- IPW65R080CFDAFKSA1
- Infineon Technologies
-
1:
7,96 €
-
3 600Pagal užsakymą
|
„Mouser“ Dalies Nr.
726-IPW65R080CFDAFKS
|
Infineon Technologies
|
MOSFETs N-Ch 650V 43.3A TO247-3
|
|
3 600Pagal užsakymą
Pagal užsakymą:
3 120 Tikėtina 2027-06-17
240 Tikėtina 2027-07-01
240 Tikėtina 2027-07-22
Gamintojo numatytas pristatymo laikas
25 Savaičių
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
43.3 A
|
72 mOhms
|
20 V
|
3.5 V
|
161 nC
|
- 40 C
|
+ 150 C
|
391 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 6A DPAK-2
- IPD65R660CFDA
- Infineon Technologies
-
1:
2,14 €
-
10 000Pagal užsakymą
|
„Mouser“ Dalies Nr.
726-IPD65R660CFDA
|
Infineon Technologies
|
MOSFETs N-Ch 650V 6A DPAK-2
|
|
10 000Pagal užsakymą
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
6 A
|
594 mOhms
|
20 V
|
3.5 V
|
20 nC
|
- 40 C
|
+ 150 C
|
62.5 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 650V 63.3A TO247-3
- IPW65R048CFDAFKSA1
- Infineon Technologies
-
1:
10,04 €
-
240Tikėtina 2027-05-20
|
„Mouser“ Dalies Nr.
726-IPW65R048CFDAFKS
|
Infineon Technologies
|
MOSFETs N-Ch 650V 63.3A TO247-3
|
|
240Tikėtina 2027-05-20
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
63.3 A
|
43 mOhms
|
20 V
|
3.5 V
|
270 nC
|
- 40 C
|
+ 150 C
|
500 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 99.6A D2PAK-2
- IPB65R110CFDA
- Infineon Technologies
-
1 000:
2,65 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 8 Savaičių
|
„Mouser“ Dalies Nr.
726-IPB65R110CFDA
|
Infineon Technologies
|
MOSFETs N-Ch 650V 99.6A D2PAK-2
|
|
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 8 Savaičių
|
|
Min.: 1 000
Daugkart.: 1 000
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
31.2 A
|
99 mOhms
|
20 V
|
3.5 V
|
118 nC
|
- 40 C
|
+ 150 C
|
277.8 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Reel
|
|
|
|
MOSFETs N-Ch 650V 6A DPAK-2
- SP000928260
- Infineon Technologies
-
2 500:
0,591 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 24 Savaičių
|
„Mouser“ Dalies Nr.
726-SP000928260
|
Infineon Technologies
|
MOSFETs N-Ch 650V 6A DPAK-2
|
|
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 24 Savaičių
|
|
Min.: 2 500
Daugkart.: 2 500
:
2 500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
6 A
|
594 mOhms
|
20 V
|
3.5 V
|
20 nC
|
- 40 C
|
+ 150 C
|
62.5 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Reel
|
|
|
|
MOSFETs N-Ch 650V 8.7A DPAK-2
- SP000928262
- Infineon Technologies
-
2 500:
0,813 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 52 Savaičių
|
„Mouser“ Dalies Nr.
726-SP000928262
|
Infineon Technologies
|
MOSFETs N-Ch 650V 8.7A DPAK-2
|
|
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 52 Savaičių
|
|
Min.: 2 500
Daugkart.: 2 500
:
2 500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
8.7 A
|
420 mOhms
|
20 V
|
4 V
|
32 nC
|
- 55 C
|
+ 175 C
|
83.3 W
|
Enhancement
|
AEC-Q100
|
CoolMOS
|
Reel
|
|