|
|
MOSFETs HIGH POWER_NEW
- IPW60R031CFD7XKSA1
- Infineon Technologies
-
1:
10,75 €
-
614Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW60R031CFD7XKS
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
614Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
63 A
|
26 mOhms
|
20 V
|
3.5 V
|
141 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW60R070CFD7XKSA1
- Infineon Technologies
-
1:
6,83 €
-
1 376Prieinamumas
-
2 640Tikėtina 2027-09-23
|
„Mouser“ Dalies Nr.
726-IPW60R070CFD7XKS
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
1 376Prieinamumas
2 640Tikėtina 2027-09-23
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
57 mOhms
|
20 V
|
3.5 V
|
67 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW60R090CFD7XKSA1
- Infineon Technologies
-
1:
6,05 €
-
2 756Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW60R090CFD7XKS
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
2 756Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
25 A
|
90 mOhms
|
20 V
|
3.5 V
|
51 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW65R041CFD7XKSA1
- Infineon Technologies
-
1:
9,40 €
-
284Prieinamumas
-
720Pagal užsakymą
|
„Mouser“ Dalies Nr.
726-IPW65R041CFD7XKS
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
284Prieinamumas
720Pagal užsakymą
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
700 V
|
68.5 A
|
41 mOhms
|
20 V
|
4 V
|
102 nC
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPB60R055CFD7ATMA1
- Infineon Technologies
-
1:
7,76 €
-
61Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IPB60R055CFD7ATM
NRND
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
61Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
38 A
|
55 mOhms
|
20 V
|
4.5 V
|
79 nC
|
- 55 C
|
+ 150 C
|
178 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW60R055CFD7XKSA1
- Infineon Technologies
-
1:
8,48 €
-
160Prieinamumas
-
240Tikėtina 2026-12-10
|
„Mouser“ Dalies Nr.
726-IPW60R055CFD7XKS
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
160Prieinamumas
240Tikėtina 2026-12-10
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
38 A
|
55 mOhms
|
20 V
|
3.5 V
|
79 nC
|
- 55 C
|
+ 150 C
|
178 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPA60R170CFD7XKSA1
- Infineon Technologies
-
1:
3,22 €
-
752Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPA60R170CFD7XKS
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
752Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
8 A
|
144 mOhms
|
20 V
|
3.5 V
|
28 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs LOW POWER_NEW
- IPA60R280CFD7XKSA1
- Infineon Technologies
-
1:
2,92 €
-
338Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPA60R280CFD7XKS
|
Infineon Technologies
|
MOSFETs LOW POWER_NEW
|
|
338Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
237 mOhms
|
20 V
|
3.5 V
|
18 nC
|
- 55 C
|
+ 150 C
|
24 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPP60R170CFD7XKSA1
- Infineon Technologies
-
1:
3,21 €
-
748Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPP60R170CFD7XKS
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
748Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
14 A
|
144 mOhms
|
20 V
|
3.5 V
|
28 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPP65R060CFD7XKSA1
- Infineon Technologies
-
1:
6,97 €
-
41Prieinamumas
-
500Tikėtina 2026-12-10
|
„Mouser“ Dalies Nr.
726-IPP65R060CFD7SA1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
41Prieinamumas
500Tikėtina 2026-12-10
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
36 A
|
60 mOhms
|
10 V
|
4.5 V
|
68 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW60R125CFD7XKSA1
- Infineon Technologies
-
1:
5,01 €
-
114Prieinamumas
-
240Tikėtina 2027-03-01
|
„Mouser“ Dalies Nr.
726-IPW60R125CFD7XKS
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
114Prieinamumas
240Tikėtina 2027-03-01
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
125 mOhms
|
20 V
|
3.5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW65R029CFD7XKSA1
- Infineon Technologies
-
1:
10,24 €
-
90Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW65R029CFD7XKS
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
90Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
700 V
|
69 A
|
29 mOhms
|
20 V
|
4.5 V
|
145 nC
|
- 55 C
|
+ 150 C
|
305 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPZA65R029CFD7XKSA1
- Infineon Technologies
-
1:
12,95 €
-
151Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPZA65R029CFD7XK
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
151Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
69 A
|
29 mOhms
|
20 V
|
4.5 V
|
145 nC
|
- 55 C
|
+ 150 C
|
305 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPT60R090CFD7XTMA1
- Infineon Technologies
-
1:
4,84 €
-
517Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPT60R090CFD7XTM
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
517Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
90 mOhms
|
20 V
|
4 V
|
42 nC
|
- 55 C
|
+ 150 C
|
160 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPT60R035CFD7XTMA1
- Infineon Technologies
-
1:
10,85 €
-
4 000Tikėtina 2027-02-04
|
„Mouser“ Dalies Nr.
726-IPT60R035CFD7XTM
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
4 000Tikėtina 2027-02-04
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
67 A
|
35 mOhms
|
20 V
|
4 V
|
109 nC
|
- 55 C
|
+ 150 C
|
351 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPP60R145CFD7XKSA1
- Infineon Technologies
-
1:
4,09 €
-
500Tikėtina 2027-06-03
|
„Mouser“ Dalies Nr.
726-IPP60R145CFD7XKS
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
500Tikėtina 2027-06-03
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
145 mOhms
|
20 V
|
3.5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPT60R125CFD7XTMA1
- Infineon Technologies
-
1:
4,17 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 19 Savaičių
|
„Mouser“ Dalies Nr.
726-IPT60R125CFD7XTM
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 19 Savaičių
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
21 A
|
125 mOhms
|
20 V
|
4 V
|
8 nC
|
- 55 C
|
+ 150 C
|
127 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW60R170CFD7XKSA1
- Infineon Technologies
-
1:
4,22 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 8 Savaičių
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
726-IPW60R170CFD7XKS
Netinkama eksploatuoti
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 8 Savaičių
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
14 A
|
144 mOhms
|
20 V
|
3.5 V
|
28 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolMOS
|
Tube
|
|