650V Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density, demanded by various applications. These MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology, delivering high-speed performance. The 650V SiC MOSFETs offer the best-in-class 20mΩ to 55mΩ low on-resistance range. These MOSFETs feature a peak efficiency above 97% at 137W/inch³ power density. The 650V SiC MOSFETs come in a thermally enhanced, rugged, high-speed, surface-mount TOLL package. Typical applications include AI data center power supplies, EV charging, energy storage systems, and solar solutions.

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Qty. RoHS ECAD modelis Montavimo stilius
Pakuotė / Korpusas
Kanalų skaičius
Vds - nutekėjimo-šaltinio pramušimo įtampa
svar. – nuolatinio išleidimo srovė
RDS On - Drain-Source Varža
Kanalas Mode
GeneSiC Semiconductor SiC MOSFET 650V 20mohm TO-247-4 G3F SiC MOSFET 1 103Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 1 Channel 650 V 90 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 20mohm TO-LL G3F SiC MOSFET 1 678Prieinamumas
Min.: 1
Daugkart.: 1
: 1 200

SMD/SMT TO-LL 650 V 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 20mohm TO-263-7 G3F SiC MOSFET 648Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 1 Channel 650 V 100 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 27mohm TO-263-7 G3F SiC MOSFET 778Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 1 Channel 650 V 78 A 27 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 27mohm TO-247-4 G3F SiC MOSFET 458Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 1 Channel 650 V 70 A 27 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 27mohm TO-LL G3F SiC MOSFET 1 200Prieinamumas
Min.: 1
Daugkart.: 1
: 1 200

SMD/SMT TO-LL 650 V 27 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-247-3 G3F SiC MOSFET 1 133Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 1 Channel 650 V 52 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-263-7 G3F SiC MOSFET 750Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 1 Channel 650 V 57 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-247-4 G3F SiC MOSFET 1 050Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 1 Channel 650 V 52 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-LL G3F SiC MOSFET 1 055Prieinamumas
Min.: 1
Daugkart.: 1
: 1 200

SMD/SMT TO-LL 650 V 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-247-3 G3F SiC MOSFET 1 129Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 1 Channel 650 V 42 A 55 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-263-7 G3F SiC MOSFET 740Prieinamumas
Min.: 1
Daugkart.: 1
: 800

GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-247-4 G3F SiC MOSFET 1 056Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 1 Channel 650 V 42 A 55 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-LL G3F SiC MOSFET 1 200Prieinamumas
Min.: 1
Daugkart.: 1
: 1 200