1200V Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor 1200V Gen-3 Fast (G3F) SiC MOSFETs enable 22kW, 800V bi-directional on-board chargers for Electric Vehicles (EVs). These MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology, delivering high-speed performance. The 1200V SiC MOSFETs include 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling. These MOSFETs offer a low RDS(ON), superior power density, and cool-running performance. The 1200V SiC MOSFETs achieve up to 95.5% peak efficiency in EV charging and power conversion systems. These MOSFETs are ideal for applications, including EVs and DC-DC converters.

Rezultatai: 15
Pasirinkite Vaizdas Dalies Nr.
 Gam.
Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu.
Qty. RoHS ECAD modelis Montavimo stilius
Pakuotė / Korpusas
Tranzistoriaus poliškumas
Kanalų skaičius
Vds - nutekėjimo-šaltinio pramušimo įtampa
svar. – nuolatinio išleidimo srovė
RDS On - Drain-Source Varža
Kanalas Mode
GeneSiC Semiconductor SiC MOSFET 1200V 18mohm TO-263-7 G3F SiC MOSFET 753Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 34mohm TO-263-7 G3F SiC MOSFET 1 546Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-247-4 G3F SiC MOSFET 1 562Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 61 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 135mohm TO-263-7 G3F SiC MOSFET 1 495Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 135 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 18mohm TO-247-4 G3F SiC MOSFET
Duomenų Lapas
428Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 20mohm TO-247-4 G3F SiC MOSFET 536Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 109 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 25mohm TO-263-7 G3F SiC MOSFET 257Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 25mohm TO-247-4 G3F SiC MOSFET 247Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 34mohm TO-247-4 G3F SiC MOSFET 456Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-263-7 G3F SiC MOSFET 761Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 68 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 65mohm TO-263-7 G3F SiC MOSFET
Duomenų Lapas
1 560Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 65mohm TO-247-4 G3F SiC MOSFET 473Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 75mohm TO-263-7 G3F SiC MOSFET 572Prieinamumas
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 39 A 75 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 75mohm TO-247-4 G3F SiC MOSFET 1 685Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 35 A 75 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 20mohm TO-263-7 G3F SiC MOSFET 40Prieinamumas
800Tikėtina 2026-08-31
Min.: 1
Daugkart.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 123 A 20 mOhms Enhancement