SiC MOSFETs

Littelfuse SiC MOSFETs are optimized for high-frequency, high-efficiency applications. These robust SiC MOSFETs offer low gate charges, low output capacitance, and low gate resistance for high-frequency switching. These devices also feature extremely low drain-source on-state resistance. The low gate charge and on-resistance of these MOSFETs translate into lower conduction and switching losses, respectively. Littelfuse offers in-house designed, developed, and manufactured SiC MOSFETs with extremely low gate charge and output capacitance, industry-leading performance, and ruggedness at all temperatures. Littelfuse SiC MOSFETs are available in a range of varieties, including 1200V in 80mΩ, 120mΩ, and 160mΩ versions.

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Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS Gaminio tipas Montavimo stilius Pakuotė / Korpusas
IXYS SiC MOSFET TO247 1.7KV 4.4A N-CH SIC 1 753Prieinamumas
7,94 €
4,75 €
Min.: 1
Daugkart.: 1
SiC MOSFETS Through Hole TO-247-3
Littelfuse SiC SCHOTTKY diodai RECT 650V 20A SM SCHOTTKY 713Prieinamumas
Pjaunama Juosta
6,65 €
3,76 €
Ritė
3,76 €
Min.: 1
Daugkart.: 1
: 800
SiC Schottky Diodes SMD/SMT D2PAK-2 (TO-263-2)

IXYS SiC MOSFET 1200 V 160 mOhm SiC Mosfet 445Prieinamumas
13,90 €
11,25 €
10,49 €
8,41 €
7,44 €
Min.: 1
Daugkart.: 1
SiC MOSFETS Through Hole TO-247-3

IXYS SiC MOSFET 1200V 80mOhm SiC MOSFET 4Prieinamumas
21,52 €
17,23 €
14,90 €
13,19 €
Min.: 1
Daugkart.: 1
SiC MOSFETS Through Hole TO-247-3
Littelfuse SiC SCHOTTKY diodai 650V/8A SiC SBD?TO263-2LAEC-Q101 Ne Sandėlyje Esantys
SiC Schottky Diodes SMD/SMT D2PAK-2 (TO-263-2)