Rezultatai: 549
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Pakuotė / Korpusas Montavimo stilius Configuration Collector- Emitter Voltage VCEO Max Kolektoriaus ir Emiterio Stoties Įtampa Didžiausia vartų emiterio įtampa Nuolatinė kolektoriaus srovė esant 25 C Pd - skaidos galia Minimali darbinė temperatūra Didžiausia darbinė temperatūra Serija Pakavimas

IXYS IGBT GenX3 600V XPT IGBT 251Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 600 V 1.8 V - 20 V, 20 V 120 A 600 W - 55 C + 175 C IXXH50N60 Tube
IXYS IGBT 650V/240A TRENCH IGBT GENX4 XPT 140Prieinamumas
125Tikėtina 2026-10-28
Min.: 1
Daugkart.: 1

Si TO-264-3 Through Hole Single 650 V 2.1 V - 20 V, 20 V 250 A 880 W - 55 C + 175 C Trench Tube
IXYS IGBT TO263 2500V 8A XPT 663Prieinamumas
Min.: 1
Daugkart.: 1

TO-263HV-3 SMD/SMT Single 280 W - 55 C + 175 C Tube
IXYS IGBT 1700V/108A High Voltage XPT IGBT 334Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247AD-3 Through Hole Single 1.7 kV 4 V - 20 V, 20 V 100 A 937 W - 55 C + 175 C High Voltage Tube
IXYS IGBT XPT IGBT C3-Class 1200V/105A 568Prieinamumas
120Tikėtina 2027-03-01
Min.: 1
Daugkart.: 1

Si TO-247AD-3 Through Hole Single 1.2 kV 3.5 V - 20 V, 20 V 100 A 750 W - 55 C + 150 C IXYH50N120 Tube
IXYS IGBT XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247 223Prieinamumas
420Tikėtina 2027-04-12
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 140 A 650 W - 55 C + 175 C 1200V XPTTM Gen 10 Tube
IXYS IGBT TO268 900V 80A XPT 687Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247AD-3 Through Hole Single 900 V 2.7 V - 20 V, 20 V 165 A 830 W - 55 C + 175 C Planar Tube
IXYS IGBT XPT IGBT C3-Class 1200V/160A 119Prieinamumas
90Tikėtina 2027-04-05
Min.: 1
Daugkart.: 1

Si TO-247AD-3 Through Hole Single 1.2 kV 3.2 V - 20 V, 20 V 200 A 1.25 kW - 55 C + 150 C IXYH82N120 Tube
IXYS IGBT XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247 192Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 240 A 1.15 kW - 55 C + 175 C 1200V XPTTM Gen 9 Tube
IXYS IGBT 1200V 220A XPT IGBT 334Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-264-3 Through Hole Single 1.2 kV 3.2 V - 20 V, 20 V 240 A 1.5 kW - 55 C + 175 C Planar Tube

IXYS IGBT XPT 1200V IGBT GenX3 XPT IGBT 279Prieinamumas
Min.: 1
Daugkart.: 1

Si SOT-227B-4 Screw Mount Single 1.2 kV 3.5 V - 20 V, 20 V 160 A 830 W - 55 C + 175 C IXYN100N120 Tube
IXYS IGBT XPT 1200V IGBT GenX3 XPT IGBT 178Prieinamumas
Min.: 1
Daugkart.: 1

Si SOT-227B-4 Screw Mount Single 1.2 kV 3.5 V - 20 V, 20 V 140 A 690 W - 55 C + 150 C IXYN100N120 Tube
IXYS IGBT SOT227 650V 100A GENX3 471Prieinamumas
Min.: 1
Daugkart.: 1

Si Screw Mount Single 650 V 1.8 V - 20 V, 20 V 170 A 600 W - 55 C + 175 C Planar Tube
IXYS IGBT SOT227 1200V 110A GENX4 267Prieinamumas
Min.: 1
Daugkart.: 1

Si SOT-227B-4 Screw Mount Single 1.2 kV 1.8 V - 20 V, 20 V 275 A 830 W - 55 C + 175 C Trench Tube

IXYS IGBT XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT SOT227B 287Prieinamumas
Min.: 1
Daugkart.: 1

Si SOT-227-4 Screw Mount Single 1.2 kV 2.4 V - 20 V, 20 V 220 A 830 W - 55 C + 175 C 1200V XPTTM Gen 6 Tube
IXYS IGBT SOT227 600V 140A GENX3 192Prieinamumas
Min.: 1
Daugkart.: 1
Si SOT-227B-4 Screw Mount Single 600 V 1.77 V - 20 V, 20 V 250 A 830 W - 55 C + 175 C Tube
IXYS IGBT TO268 4500V 30A XPT 88Prieinamumas
300Tikėtina 2026-09-02
Min.: 1
Daugkart.: 1
Si D3PAK-3 (TO-268-3) SMD/SMT Single 4.5 kV 3.9 V - 20 V, 20 V 60 A 430 W - 55 C + 150 C Tube
IXYS IGBT PLUS247 1200V 120A GENX3 190Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-PLUS-3 Through Hole Single 1.2 kV 3.2 V - 20 V, 20 V 240 A 1.5 kW - 55 C + 175 C Planar Tube

IXYS IGBT PLUS247 1200V 140A GENX4 300Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.7 V - 20 V, 20 V 480 A 1.5 kW - 55 C + 175 C Trench Tube
IXYS IGBT Discrete IGBT XPT Gen 4 1200V TO268HV 135Prieinamumas
Min.: 1
Daugkart.: 1

Si D3PAK-3 (TO-268-3) SMD/SMT Single 1.2 kV 1.8 V - 20 V, 20 V 175 A 650 W - 55 C + 175 C Trench Tube

IXYS IGBT 10 Amps 1700V 2.3 Rds 180Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 1.7 kV 3.8 V - 20 V, 20 V 20 A 140 W - 55 C + 150 C IXBH10N170 Tube
IXYS IGBT 1700V 25A 12Prieinamumas
600Tikėtina 2026-09-02
Min.: 1
Daugkart.: 1

Si TO-247AD-3 Through Hole Single 1.7 kV 3.3 V - 20 V, 20 V 40 A 250 W - 55 C + 150 C IXBH16N170 Tube

IXYS IGBT 1700V 16A 11Prieinamumas
300Tikėtina 2026-12-28
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 1.7 kV 6 V - 20 V, 20 V 16 A 190 W - 55 C + 150 C IXBH16N170 Tube
IXYS IGBT TO247 2500V 2A IGBT 63Prieinamumas
300Tikėtina 2027-03-01
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 2.5 kV 3.8 V - 20 V, 20 V 5 A 32 W - 55 C + 150 C Tube
IXYS IGBT TO247 2500V 42A HI GAIN 5Prieinamumas
300Tikėtina 2026-08-31
Min.: 1
Daugkart.: 1

Si TO-247AD-3 Through Hole Single 2.5 kV 3 V - 25 V, 25 V 104 A 500 W - 55 C + 150 C Tube