Rezultatai: 24
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Montavimo stilius Pakuotė / Korpusas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Prekinis pavadinimas
onsemi SiC MOSFET SIC MOS D2PAK-7L 40MOHM 1200V 947Prieinamumas
Pjaunama Juosta
18,13 €
13,62 €
12,89 €
Ritė
12,89 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 357 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 40MOHM 1200V 1 341Prieinamumas
18,19 €
12,82 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 650V 1 046Prieinamumas
16,46 €
11,64 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V 1 789Prieinamumas
Pjaunama Juosta
8,12 €
4,75 €
4,44 €
4,20 €
Ritė
4,20 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 19.5 A 224 mOhms - 15 V, + 25 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement EliteSiC

onsemi SiC MOSFET 60MOHM 900V 1 017Prieinamumas
9,98 €
6,91 €
6,73 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS 20MOHM 900V 1 858Prieinamumas
Pjaunama Juosta
24,02 €
18,64 €
17,64 €
Ritė
17,64 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 900 V 112 A 28 mOhms - 8 V, + 22 V 4.3 V 200 nC - 55 C + 175 C 477 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 650V 425Prieinamumas
11,38 €
6,79 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 650 V 66 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 291 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 650V 497Prieinamumas
8,72 €
5,79 €
5,45 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 650 V 47 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 650V 1 589Prieinamumas
10,41 €
7,21 €
7,06 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 650 V 55 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 187 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 650V 372Prieinamumas
9,41 €
6,11 €
5,79 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 650 V 33 A 70 mOhms - 18 V, + 18 V 4.3 V 74 nC - 55 C + 175 C 88 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 650V 794Prieinamumas
Pjaunama Juosta
11,09 €
7,25 €
6,91 €
6,86 €
Ritė
6,86 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 121 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 650V 202Prieinamumas
24,74 €
17,37 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 650 V 142 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 150 C 500 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOSFET 900V TO247-4L 60MOHM 314Prieinamumas
10,35 €
7,22 €
7,07 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 650V 2 260Prieinamumas
Pjaunama Juosta
27,99 €
22,41 €
19,38 €
18,35 €
Ritė
17,15 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 650 V 145 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 250 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS 20MW 1200V 2 068Prieinamumas
Pjaunama Juosta
33,51 €
25,34 €
25,33 €
23,99 €
Ritė
23,99 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 98 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 468 W Enhancement EliteSiC

onsemi SiC MOSFET 20MW 1200V 573Prieinamumas
33,24 €
23,44 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS 60MOHM 900V 330Prieinamumas
Pjaunama Juosta
11,43 €
7,34 €
6,94 €
Ritė
6,94 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 900 V 44 A 84 mOhms - 8 V, + 22 V 4.3 V 88 nC - 55 C + 175 C 211 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V 439Prieinamumas
Pjaunama Juosta
11,76 €
7,00 €
6,62 €
Ritė
6,62 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 30 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 179 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V 166Prieinamumas
29,53 €
23,55 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 102 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 510 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART 1 664Prieinamumas
8,86 €
6,26 €
5,21 €
4,64 €
4,35 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC

onsemi SiC MOSFET 20MOHM 900V 210Prieinamumas
25,60 €
17,82 €
17,54 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 503 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V 813Prieinamumas
20,07 €
12,65 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V 415Prieinamumas
450Tikėtina 2026-11-09
8,64 €
4,74 €
4,37 €
4,25 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V 172Prieinamumas
11,24 €
6,24 €
5,96 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 29 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC