|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
17,67 €
-
1 558Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R022M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1 558Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 50
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
25,94 €
-
496Prieinamumas
-
240Tikėtina 2027-05-27
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R012M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
496Prieinamumas
240Tikėtina 2027-05-27
|
|
|
25,94 €
|
|
|
17,14 €
|
|
|
15,04 €
|
|
|
14,88 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
19,31 €
-
609Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R017M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
609Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
14,69 €
-
451Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R026M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
451Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
12,34 €
-
1 001Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R034M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
1 001Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 70
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
9,58 €
-
739Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R053M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
739Prieinamumas
|
|
|
9,58 €
|
|
|
6,02 €
|
|
|
5,09 €
|
|
|
4,52 €
|
|
|
4,28 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
- IMZC120R040M2HXKSA1
- Infineon Technologies
-
1:
10,27 €
-
1 992Pagal užsakymą
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R040M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
|
|
1 992Pagal užsakymą
Pagal užsakymą:
1 272 Tikėtina 2026-10-29
Gamintojo numatytas pristatymo laikas
45 Savaičių
|
|
|
10,27 €
|
|
|
6,13 €
|
|
|
5,29 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
48 A
|
40 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
- IMZC120R078M2HXKSA1
- Infineon Technologies
-
1:
9,06 €
-
480Tikėtina 2026-08-07
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R078M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
|
|
480Tikėtina 2026-08-07
|
|
|
9,06 €
|
|
|
5,91 €
|
|
|
4,74 €
|
|
|
3,86 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
28 A
|
78 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
21 nC
|
- 55 C
|
+ 175 C
|
143 W
|
Enhancement
|
CoolSiC
|
|
Lietuva