4th Generation EF Series MOSFETs

Vishay / Siliconix 4th Generation EF Series MOSFETs offer an extremely low figure-of-merit (FOM) rating for high-performance switching and high efficiency. The MOSFET FOM is calculated as ON-resistance (R(DS)ON) multiplied by gate charge (Qg). Built on Vishay 4th generation super-junction technology, these MOSFETs feature a low typical ON-resistance range of 0.088Ω to 0.225Ω at VGS=10V and a gate charge down to 21nC. For improved switching performance, these devices provide low effective output capacitances (Co(er) and Co(tr)). These values translate into reduced conduction and switching losses to save energy. Vishay / Siliconix 4th Generation EF Series MOSFETs are offered in PowerPAK® 8x8 and TO-220AB packages. The series is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.

Rezultatai: 22
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Montavimo stilius Pakuotė / Korpusas Tranzistoriaus poliškumas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Prekinis pavadinimas Pakavimas
Vishay Semiconductors MOSFETs TO247 600V 41A N-CH MOSFET 852Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole N-Channel 1 Channel 600 V 41 A 68 mOhms 30 V 5 V 27 nC - 55 C + 150 C 250 W Enhancement
Vishay Semiconductors MOSFETs TO220 600V 29A N-CH MOSFET 1 559Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 29 A 88 mOhms 30 V 5 V 35 nC - 55 C + 150 C 208 W Enhancement TrenchFET
Vishay Semiconductors MOSFETs TO220 600V 16A N-CH MOSFET 1 161Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole N-Channel 1 Channel 600 V 16 A 68 mOhms 30 V 5 V 51 nC - 55 C + 150 C 39 W Enhancement
Vishay Semiconductors MOSFETs TO220 600V 18A N-CH MOSFET 1 286Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 18 A 225 mOhms 30 V 5 V 65 nC - 55 C + 150 C 223 W Enhancement TrenchFET
Vishay / Siliconix MOSFETs TO220 600V 8.4A N-CH MOSFET 1 516Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 8.4 A 193 mOhms 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay / Siliconix MOSFETs PWRPK 600V 23A N-CH MOSFET 2 647Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT PowerPAK 8 x 8 N-Channel 1 Channel 600 V 23 A 109 mOhms 30 V 5 V 31 nC - 55 C + 150 C 156 W Enhancement TrenchFET Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFETs PWRPK 600V 16A N-CH MOSFET 2 478Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT PowerPAK 8 x 8 N-Channel 1 Channel 600 V 16 A 168 mOhms 30 V 5 V 21 nC - 55 C + 150 C 114 W Enhancement TrenchFET Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFETs TO220 600V 25A N-CH MOSFET 489Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 25 A 109 mOhms 30 V 5 V 31 nC - 55 C + 150 C 179 W Enhancement TrenchFET
Vishay Semiconductors MOSFETs TOLL 600V 47A E SERIES 5 044Prieinamumas
2 000Tikėtina 2027-02-15
Min.: 1
Daugkart.: 1
Maks.: 2 000
: 2 000

Si SMD/SMT SO-8 N-Channel 1 Channel 80 V 66 A 12.5 mOhms 20 V 2.5 V 45 nC - 55 C + 175 C 135 W Enhancement Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFETs TO247 600V 61A N-CH MOSFET 373Prieinamumas
500Tikėtina 2027-04-01
Min.: 1
Daugkart.: 1
Maks.: 1 000

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61 A 40 mOhms 30 V 3 V 84 nC - 55 C + 150 C 357 W Enhancement Tube
Vishay / Siliconix MOSFETs 600V PowerPAK 8x8 N-CHANNEL 1 819Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT PowerPAK-8 x 8 N-Channel 1 Channel 600 V 36 A 71 mOhms 30 V 5 V 50 nC - 55 C + 150 C 202 W Enhancement Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFETs TO220 600V 41A N-CH MOSFET 733Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole N-Channel 1 Channel 600 V 41 A 68 mOhms 30 V 5 V 51 nC - 55 C + 150 C 250 W Enhancement
Vishay / Siliconix MOSFETs E Series Pwr MOSFET w/Fast Body Diode 415Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole N-Channel 1 Channel 600 V 29 A 100 mOhms 30 V 5 V 35 nC - 55 C + 150 C 35 W Enhancement Tube
Vishay Semiconductors MOSFETs TO252 600V 19A N-CH MOSFET 69Prieinamumas
3 000Tikėtina 2026-09-21
Min.: 1
Daugkart.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 19 A 201 mOhms 30 V 3 V 21 nC - 55 C + 150 C 156 W Enhancement
Vishay Semiconductors MOSFETs TO247 600V 25A N-CH MOSFET 353Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole N-Channel 1 Channel 600 V 25 A 125 mOhms 30 V 5 V 31 nC - 55 C + 150 C 179 W Enhancement
Vishay / Siliconix MOSFETs TO247 600V 8.4A N-CH MOSFET 332Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 8.4 A 168 mOhms 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay Semiconductors MOSFETs PWRPK 600V 21A N-CH MOSFET 1 375Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT SO-8 N-Channel 1 Channel 40 V 35.4 A 2.3 mOhms 30 V 2.5 V 70 nC - 55 C + 150 C 65.7 W Enhancement Reel, Cut Tape
Vishay Semiconductors MOSFETs N-CHANNEL 600V
2 000Pagal užsakymą
Min.: 1
Daugkart.: 1

Si SMD/SMT TO-263AB-4 N-Channel 1 Channel 600 V 46 A 55 mOhms 30 V 5 V 63 nC - 55 C + 150 C 278 W Enhancement Tube
Vishay Semiconductors MOSFETs TO263 600V 41A N-CH MOSFET
2 000Tikėtina 2027-04-23
Min.: 1
Daugkart.: 1

Si SMD/SMT N-Channel 1 Channel 600 V 41 A 68 mOhms 30 V 5 V 51 nC - 55 C + 150 C 250 W Enhancement
Vishay Semiconductors MOSFETs TO263 600V 25A N-CH MOSFET
1 000Tikėtina 2026-11-02
Min.: 1
Daugkart.: 1

Si SMD/SMT N-Channel 1 Channel 600 V 25 A 125 mOhms 30 V 5 V 31 nC - 55 C + 150 C 179 W Enhancement
Vishay / Siliconix MOSFETs TO263 600V 8.4A N-CH MOSFET
953Tikėtina 2026-12-21
Min.: 1
Daugkart.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 8.4 A 168 mOhms 30 V 5 V 32 nC - 55 C + 150 C 156 W Enhancement Tube
Vishay Semiconductors MOSFETs TO220 600V 11A N-CH MOSFET 1 000Turimos Atsargos
Min.: 1 000
Daugkart.: 1 000

Si Through Hole N-Channel 1 Channel 600 V 11 A 125 mOhms 30 V 5 V 31 nC - 55 C + 150 C 179 W Enhancement