|
|
SiC MOSFET SIC MOS TO247-4L 40MOHM 1200V M3
- NTH4L040N120M3S
- onsemi
-
1:
11,76 €
-
1 017Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTH4L040N120M3S
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 40MOHM 1200V M3
|
|
1 017Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 450
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
|
|
|
SiC MOSFET SIC MOS D2PAK-7L 650V
- NTBG015N065SC1
- onsemi
-
1:
23,61 €
-
3 250Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTBG015N065SC1
|
onsemi
|
SiC MOSFET SIC MOS D2PAK-7L 650V
|
|
3 250Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
SiC MOSFETS
|
|
SMD/SMT
|
D2PAK-7
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 650V
- NTHL075N065SC1
- onsemi
-
1:
7,59 €
-
639Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTHL075N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 650V
|
|
639Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-3
|
|
|
|
SiC MOSFET SIC 1700V MOS 28MO IN TO247-4L
- NTH4L028N170M1
- onsemi
-
1:
31,02 €
-
753Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
863-NTH4L028N170M1
NRND
|
onsemi
|
SiC MOSFET SIC 1700V MOS 28MO IN TO247-4L
|
|
753Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 450
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 14MOHM 1200V
- NTH4L014N120M3P
- onsemi
-
1:
26,36 €
-
432Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTH4L014N120M3P
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 14MOHM 1200V
|
|
432Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
|
|
|
SiC MOSFET SIC MOS 20MOHM 900V
- NTBG020N090SC1
- onsemi
-
1:
24,02 €
-
1 858Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTBG020N090SC1
|
onsemi
|
SiC MOSFET SIC MOS 20MOHM 900V
|
|
1 858Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
SiC MOSFETS
|
|
SMD/SMT
|
D2PAK-7
|
|
|
|
SiC MOSFET SIC MOS PQFN88 650V
- NTMT045N065SC1
- onsemi
-
1:
11,32 €
-
5 718Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTMT045N065SC1
|
onsemi
|
SiC MOSFET SIC MOS PQFN88 650V
|
|
5 718Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
TDFN-4
|
|
|
|
SiC SCHOTTKY diodai 1200V SiC SBD 30A
- FFSH30120ADN-F155
- onsemi
-
1:
14,51 €
-
511Prieinamumas
|
„Mouser“ Dalies Nr.
512-FFSH30120ADNF155
|
onsemi
|
SiC SCHOTTKY diodai 1200V SiC SBD 30A
|
|
511Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC Schottky Diodes
|
|
Through Hole
|
TO-247-3
|
|
|
|
SiC SCHOTTKY diodai SIC DIODE GEN2.0 1200V TO247-2L
- NDSH50120C
- onsemi
-
1:
16,80 €
-
386Prieinamumas
|
„Mouser“ Dalies Nr.
863-NDSH50120C
|
onsemi
|
SiC SCHOTTKY diodai SIC DIODE GEN2.0 1200V TO247-2L
|
|
386Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC Schottky Diodes
|
|
Through Hole
|
TO-247-2
|
|
|
|
SiC MOSFET SIC MOS TOLL 650V
- NTBL045N065SC1
- onsemi
-
1:
10,89 €
-
1 364Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTBL045N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TOLL 650V
|
|
1 364Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
PSOF-8
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 650V
- NTH4L015N065SC1
- onsemi
-
1:
24,74 €
-
202Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTH4L015N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 650V
|
|
202Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
|
|
|
IGBT FS4 LOW VCESAT IGBT 650V
- FGHL50T65LQDT
- onsemi
-
1:
4,14 €
-
446Prieinamumas
-
Specialus užsakymas gamykloje
|
„Mouser“ Dalies Nr.
863-FGHL50T65LQDT
Specialus užsakymas gamykloje
|
onsemi
|
IGBT FS4 LOW VCESAT IGBT 650V
|
|
446Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
IGBT 1200V/75A FS7 IGBT TP247
- FGY75T120SWD
- onsemi
-
1:
9,28 €
-
347Prieinamumas
|
„Mouser“ Dalies Nr.
863-FGY75T120SWD
|
onsemi
|
IGBT 1200V/75A FS7 IGBT TP247
|
|
347Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 450
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
MOSFET moduliai 8M 1200V 40A M3S SIC TNPC MODULE
- NXH008T120M3F2PTHG
- onsemi
-
1:
150,37 €
-
19Prieinamumas
-
80Tikėtina 2027-01-11
|
„Mouser“ Dalies Nr.
863-H008T120M3F2PTHG
|
onsemi
|
MOSFET moduliai 8M 1200V 40A M3S SIC TNPC MODULE
|
|
19Prieinamumas
80Tikėtina 2027-01-11
|
|
Min.: 1
Daugkart.: 1
Maks.: 20
|
|
MOSFET Modules
|
SiC
|
Press Fit
|
PIM-29
|
|
|
|
IGBT 650V 50A FS4 HYBRID IGBT INDUSTRIAL (TO247-4L)
- FGH4L50T65MQDC50
- onsemi
-
1:
8,31 €
-
182Prieinamumas
|
„Mouser“ Dalies Nr.
863-FGH4L50T65MQDC50
|
onsemi
|
IGBT 650V 50A FS4 HYBRID IGBT INDUSTRIAL (TO247-4L)
|
|
182Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-4LD
|
|
|
|
IGBT 1200V, 40A Trench Field Stop VII (FS7) Discrete IGBT
- FGHL40T120RWD
- onsemi
-
1:
7,14 €
-
245Prieinamumas
|
„Mouser“ Dalies Nr.
863-FGHL40T120RWD
|
onsemi
|
IGBT 1200V, 40A Trench Field Stop VII (FS7) Discrete IGBT
|
|
245Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
IGBT 1200V, 40A Field Stop VII (FS7) Discrete IGBT Fast Switching
- FGHL40T120SWD
- onsemi
-
1:
5,22 €
-
276Prieinamumas
|
„Mouser“ Dalies Nr.
863-FGHL40T120SWD
|
onsemi
|
IGBT 1200V, 40A Field Stop VII (FS7) Discrete IGBT Fast Switching
|
|
276Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
IGBT 1200V, 60A Trench Field Stop VII (FS7) Discrete IGBT
- FGHL60T120RWD
- onsemi
-
1:
9,45 €
-
92Prieinamumas
-
450Tikėtina 2026-12-29
|
„Mouser“ Dalies Nr.
863-FGHL60T120RWD
|
onsemi
|
IGBT 1200V, 60A Trench Field Stop VII (FS7) Discrete IGBT
|
|
92Prieinamumas
450Tikėtina 2026-12-29
|
|
Min.: 1
Daugkart.: 1
Maks.: 450
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
SiC MOSFET SIC MOS D2PAK-7L 70MOHM 1200V M3
- NTBG070N120M3S
- onsemi
-
1:
7,46 €
-
253Prieinamumas
-
800Tikėtina 2027-04-13
|
„Mouser“ Dalies Nr.
863-NTBG070N120M3S
|
onsemi
|
SiC MOSFET SIC MOS D2PAK-7L 70MOHM 1200V M3
|
|
253Prieinamumas
800Tikėtina 2027-04-13
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
SiC MOSFETS
|
|
SMD/SMT
|
D2PAK-7
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 22MOHM 1200V M3
- NTHL022N120M3S
- onsemi
-
1:
16,75 €
-
46Prieinamumas
-
450Tikėtina 2027-03-02
|
„Mouser“ Dalies Nr.
863-NTHL022N120M3S
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 22MOHM 1200V M3
|
|
46Prieinamumas
450Tikėtina 2027-03-02
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-3
|
|
|
|
SiC SCHOTTKY diodai SIC TO263 SBD 20A 1 200V
- FFSB20120A
- onsemi
-
1:
8,47 €
-
653Prieinamumas
|
„Mouser“ Dalies Nr.
863-FFSB20120A
|
onsemi
|
SiC SCHOTTKY diodai SIC TO263 SBD 20A 1 200V
|
|
653Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
SiC Schottky Diodes
|
|
SMD/SMT
|
D2PAK-3
|
|
|
|
SiC SCHOTTKY diodai 650V 6A SIC SBD GEN1.5
- FFSD0665B
- onsemi
-
1:
2,57 €
-
1 539Prieinamumas
-
2 500Tikėtina 2026-11-04
|
„Mouser“ Dalies Nr.
863-FFSD0665B
|
onsemi
|
SiC SCHOTTKY diodai 650V 6A SIC SBD GEN1.5
|
|
1 539Prieinamumas
2 500Tikėtina 2026-11-04
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 500
:
2 500
|
|
SiC Schottky Diodes
|
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
IGBT FS4 T TO247 50A 650V 4L
- FGH4L50T65SQD
- onsemi
-
1:
3,87 €
-
1 018Prieinamumas
|
„Mouser“ Dalies Nr.
863-FGH4L50T65SQD
|
onsemi
|
IGBT FS4 T TO247 50A 650V 4L
|
|
1 018Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-4
|
|
|
|
SiC SCHOTTKY diodai 650V 6A SIC SBD GEN1.5
- FFSB0665B
- onsemi
-
1:
2,67 €
-
708Prieinamumas
|
„Mouser“ Dalies Nr.
863-FFSB0665B
|
onsemi
|
SiC SCHOTTKY diodai 650V 6A SIC SBD GEN1.5
|
|
708Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
SiC Schottky Diodes
|
|
SMD/SMT
|
D2PAK-2
|
|
|
|
SiC SCHOTTKY diodai 650V 10A SIC GEN1.5
- FFSB1065B
- onsemi
-
1:
3,78 €
-
436Prieinamumas
|
„Mouser“ Dalies Nr.
863-FFSB1065B
|
onsemi
|
SiC SCHOTTKY diodai 650V 10A SIC GEN1.5
|
|
436Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
SiC Schottky Diodes
|
|
SMD/SMT
|
D2PAK-2
|
|