Automotive U-MOSVI Power MOSFETs

Toshiba Automotive U-MOSVI Power MOSFETs are -40V P-channel power MOSFETs for automotive applications. These devices feature a gate drive voltage of -4.5V compared with -6V for the conventional products in the DPAK+ package. This feature allows systems to be used even when the battery voltage drops. The Toshiba Automotive U-MOSVI Power MOSFETs feature low on-resistance.

Rezultatai: 20
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Toshiba MOSFETs 375W 1MHz Automotive; AEC-Q101 42 524Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Si SMD/SMT TO-220SM-3 P-Channel 1 Channel 40 V 200 A 1.8 mOhms - 20 V, 10 V 3 V 460 nC + 175 C 375 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs 68W 1MHz Automotive; AEC-Q101 46 180Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 40 A 9.1 mOhms - 20 V, 10 V 3 V 83 nC + 175 C 68 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFETs 27W 1MHz Automotive; AEC-Q101 44 969Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 8 A 104 mOhms - 20 V, 10 V 3 V 19 nC + 175 C 27 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs 27W 1MHz Automotive; AEC-Q101 17 733Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 10 A 44 mOhms - 20 V, 10 V 3 V 19 nC + 175 C 27 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFETs 100W 1MHz Automotive; AEC-Q101 4 069Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 80 A 5.2 mOhms - 20 V, 10 V 3 V 158 nC + 175 C 100 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFETs 90W 1MHz Automotive; AEC-Q101 3 960Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 50 A 13.8 mOhms - 20 V, 10 V 3 V 124 nC + 175 C 90 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFETs 100W 1MHz Automotive; AEC-Q101 2 738Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 60 A 11.2 mOhms - 20 V, 10 V 3 V 156 nC + 175 C 100 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs 170W 1MHz Automotive; AEC-Q101 12 150Prieinamumas
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT SOP-Advance-8 P-Channel 1 Channel 40 V 100 A 3.1 mOhms - 20 V, 10 V 2.1 V 230 nC + 175 C 170 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs 132W 1MHz Automotive; AEC-Q101 3 893Prieinamumas
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT SOP-Advance-8 P-Channel 1 Channel 40 V 60 A 4.7 mOhms - 20 V, 10 V 2.1 V 160 nC - 55 C + 175 C 132 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs 68W 1MHz Automotive; AEC-Q101 2 464Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 30 A 21.8 mOhms - 20 V, 10 V 3 V 80 nC + 175 C 68 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFETs AUTO AEC-Q SS MOS P-ch Low Voltage Gate Drive VDSS:-20V Ic:-0.8A SOT-723 6 373Prieinamumas
Min.: 1
Daugkart.: 1
: 8 000

Si SMD/SMT VESM-3 P-Channel 1 Channel 20 V 800 mA 480 mOhms - 8 V, 6 V 1 V 1.6 nC + 150 C 500 mW Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs AUTO AEC-Q SS MOS P-ch Logic-Level Gate Drive VDSS:-40V IC:-7A PD:1.5W TSOP6F 4 707Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT TSOP6F P-Channel 1 Channel 40 V 7 A 48 mOhms - 20 V, 10 V 2 V 24.2 nC + 150 C 1.5 W AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs 41W 1MHz Automotive; AEC-Q101 1 438Prieinamumas
6 000Pagal užsakymą
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 15 A 50 mOhms - 20 V, 10 V 3 V 36 nC + 175 C 41 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs 41W 1MHz Automotive; AEC-Q101 705Prieinamumas
6 000Tikėtina 2026-11-16
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 20 A 22.2 mOhms - 20 V, 10 V 3 V 37 nC + 175 C 41 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFETs 90W 1MHz Automotive; AEC-Q101 594Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 60 A 6.3 mOhms - 20 V, 10 V 3 V 125 nC + 175 C 90 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFETs 100W 1MHz Automotive; AEC-Q101 1 193Prieinamumas
5 000Tikėtina 2026-08-17
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT TSON-Advance-8 P-Channel 1 Channel 40 V 40 A 9.6 mOhms - 20 V, 10 V 2.1 V 64 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs 180W 1MHz Automotive; AEC-Q101
3 800Tikėtina 2026-09-11
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 90 A 4.3 mOhms - 20 V, 10 V 2 V 172 nC + 175 C 180 W Enhancement AEC-Q101 Reel, Cut Tape
Toshiba MOSFETs -60 V 27.3mOhm P-ch MOSFET AEC-Q TSON Advance(WF)
5 000Tikėtina 2026-08-07
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT TSON-8 P-Channel 1 Channel 60 V 25 A 27.3 mOhms - 20 V, 10 V 2.1 V 71 nC + 175 C 100 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs -60 V 52mOhm P-ch MOSFET AEC-Q TSON Advance(WF)
5 000Tikėtina 2027-01-13
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT TSON-8 P-Channel 1 Channel 60 V 15 A 52 mOhms - 20 V, 10 V 2.1 V 47 nC + 175 C 65 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFETs P-ch MOSFET, -30 V, -6.0 A, 0.042Ohm@10V, DFN2020B(WF)
36 000Pagal užsakymą
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT DFN2020B-6 P-Channel 1 Channel 30 V 24 A 144 mOhms - 12 V, 6 V 1.2 V 8.2 nC + 150 C 3.3 W Enhancement Reel, Cut Tape