|
|
SiC MOSFET SIC MOS TO247-3L 650V
- NTHL075N065SC1
- onsemi
-
1:
7,59 €
-
625Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTHL075N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 650V
|
|
625Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
38 A
|
85 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
61 nC
|
- 55 C
|
+ 175 C
|
148 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 70MOHM 1200V M3
- NVH4L070N120M3S
- onsemi
-
1:
14,99 €
-
217Prieinamumas
|
„Mouser“ Dalies Nr.
863-NVH4L070N120M3S
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 70MOHM 1200V M3
|
|
217Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
29 A
|
64.8 mOhms
|
- 8 V, + 22 V
|
3.37 V
|
47.9 nC
|
- 55 C
|
+ 175 C
|
163 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS D2PAK-7L 650V
- NTBG060N065SC1
- onsemi
-
1:
10,55 €
-
312Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTBG060N065SC1
|
onsemi
|
SiC MOSFET SIC MOS D2PAK-7L 650V
|
|
312Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
1 Channel
|
650 V
|
46 A
|
70 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
170 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 650V
- NTHL060N065SC1
- onsemi
-
1:
8,72 €
-
497Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTHL060N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 650V
|
|
497Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
47 A
|
70 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 650V
- NTH4L015N065SC1
- onsemi
-
1:
24,74 €
-
202Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTH4L015N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 650V
|
|
202Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
142 A
|
18 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
283 nC
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS D2PAK-7L 650V
- NTBG015N065SC1
- onsemi
-
1:
27,99 €
-
3 232Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTBG015N065SC1
|
onsemi
|
SiC MOSFET SIC MOS D2PAK-7L 650V
|
|
3 232Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
1 Channel
|
650 V
|
145 A
|
18 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
283 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-3L 70MOHM 1200V M3
- NTHL070N120M3S
- onsemi
-
1:
8,20 €
-
329Prieinamumas
-
1 350Pagal užsakymą
|
„Mouser“ Dalies Nr.
863-NTHL070N120M3S
|
onsemi
|
SiC MOSFET SIC MOS TO247-3L 70MOHM 1200V M3
|
|
329Prieinamumas
1 350Pagal užsakymą
Turime sandėlyje:
329 Galime išsiųsti iš karto
Pagal užsakymą:
900 Tikėtina 2027-04-06
450 Tikėtina 2027-04-09
Gamintojo numatytas pristatymo laikas
50 Savaičių
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
37 A
|
91 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
49 nC
|
- 55 C
|
+ 175 C
|
252 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS 60MOHM 900V
- NTBG060N090SC1
- onsemi
-
1:
11,43 €
-
330Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTBG060N090SC1
|
onsemi
|
SiC MOSFET SIC MOS 60MOHM 900V
|
|
330Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
SMD/SMT
|
D2PAK-7
|
1 Channel
|
900 V
|
44 A
|
84 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
88 nC
|
- 55 C
|
+ 175 C
|
211 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TO247-4L 70MOHM 1200V M3
- NTH4L070N120M3S
- onsemi
-
1:
9,31 €
-
13Prieinamumas
-
450Tikėtina 2027-02-09
|
„Mouser“ Dalies Nr.
863-NTH4L070N120M3S
|
onsemi
|
SiC MOSFET SIC MOS TO247-4L 70MOHM 1200V M3
|
|
13Prieinamumas
450Tikėtina 2027-02-09
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
37 A
|
91 mOhms
|
- 10 V, + 22 V
|
4.4 V
|
49 nC
|
- 55 C
|
+ 175 C
|
252 W
|
Enhancement
|
EliteSiC
|
|
|
|
SiC MOSFET SIC MOS TOLL 650V
- NTBL045N065SC1
- onsemi
-
1:
11,71 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 52 Savaičių
|
„Mouser“ Dalies Nr.
863-NTBL045N065SC1
|
onsemi
|
SiC MOSFET SIC MOS TOLL 650V
|
|
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 52 Savaičių
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
SMD/SMT
|
PSOF-8
|
1 Channel
|
650 V
|
73 A
|
50 mOhms
|
- 8 V, + 22 V
|
4.3 V
|
105 nC
|
- 55 C
|
+ 175 C
|
348 W
|
Enhancement
|
EliteSiC
|
|