SiC MOSFET 1200V TO-247-4L, N, 120A, 1200V, 22.3m?, 175 Deg C
DIF120SIC022
Diotec Semiconductor
1:
26,74 €
438 Prieinamumas
"Mouser Naujiena"
„Mouser“ Dalies Nr.
637-DIF120SIC022
"Mouser Naujiena"
Diotec Semiconductor
SiC MOSFET 1200V TO-247-4L, N, 120A, 1200V, 22.3m?, 175 Deg C
438 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
1 Channel
1.2 kV
120 A
22.3 mOhms
- 4 V, + 18 V
4 V
269 nC
- 55 C
+ 175 C
340 W
Enhancement
DIF120SIC022
SiC MOSFET SiC MOSFET, TO-247-4L, 0, 120A, 1200V, 0.0223?, Automotive
DIF120SIC022-AQ
Diotec Semiconductor
1:
68,52 €
450 Prieinamumas
„Mouser“ Dalies Nr.
637-DIF120SIC022-AQ
Diotec Semiconductor
SiC MOSFET SiC MOSFET, TO-247-4L, 0, 120A, 1200V, 0.0223?, Automotive
450 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
1 Channel
1.2 kV
120 A
22.3 mOhms
- 4 V, + 18 V
4 V
269 nC
- 55 C
+ 175 C
340 W
Enhancement
DIF120SIC022-AQ
SiC MOSFET
DIF120SIC028
Diotec Semiconductor
1:
30,50 €
450 Prieinamumas
"Mouser Naujiena"
„Mouser“ Dalies Nr.
637-DIF120SIC028
"Mouser Naujiena"
Diotec Semiconductor
SiC MOSFET
450 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
1 Channel
1.2 kV
118 A
28 mOhms
- 5 V, + 20 V
4 V
373 nC
- 55 C
+ 175 C
715 W
Enhancement
DIF120SIC028
SiC MOSFET
DIF120SIC053
Diotec Semiconductor
1:
10,24 €
435 Prieinamumas
"Mouser Naujiena"
„Mouser“ Dalies Nr.
637-DIF120SIC053
"Mouser Naujiena"
Diotec Semiconductor
SiC MOSFET
435 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
1 Channel
1.2 kV
65 A
53 mOhms
- 4 V, + 18 V
4 V
121 nC
- 55 C
+ 175 C
278 W
Enhancement
DIF120SIC053
SiC MOSFET
DIF120SIC053-AQ
Diotec Semiconductor
1:
24,27 €
448 Prieinamumas
„Mouser“ Dalies Nr.
637-DIF120SIC053-AQ
Diotec Semiconductor
SiC MOSFET
448 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
1 Channel
1.2 kV
65 A
53 mOhms
- 4 V, + 18 V
4 V
121 nC
- 55 C
+ 175 C
278 W
Enhancement
SiC MOSFET SiC MOSFET, TO-247-3L, N, 150A, 650V, 15m?, 175DegC
DIW065SIC015
Diotec Semiconductor
1:
30,38 €
436 Prieinamumas
„Mouser“ Dalies Nr.
637-DIW065SIC015
Diotec Semiconductor
SiC MOSFET SiC MOSFET, TO-247-3L, N, 150A, 650V, 15m?, 175DegC
436 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
1 Channel
650 V
150 A
15 mOhms
- 4 V, + 15 V
4 V
236 nC
- 55 C
+ 175 C
550 W
Enhancement
DIW065SIC015
SiC MOSFET
DIW065SIC049
Diotec Semiconductor
1:
13,85 €
450 Prieinamumas
„Mouser“ Dalies Nr.
637-DIW065SIC049
Diotec Semiconductor
SiC MOSFET
450 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
1 Channel
650 V
60 A
49 mOhms
- 5 V, + 18 V
4 V
128 nC
- 55 C
+ 175 C
550 W
Enhancement
DIW065SIC049
SiC MOSFET
DIW065SIC080
Diotec Semiconductor
1:
8,99 €
447 Prieinamumas
„Mouser“ Dalies Nr.
637-DIW065SIC080
Diotec Semiconductor
SiC MOSFET
447 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
1 Channel
650 V
36 A
80 mOhms
- 5 V, + 18 V
4 V
75 nC
- 55 C
+ 175 C
175 W
Enhancement
DIW065SIC080
SiC MOSFET SiC MOSFET, TO-247-3L, 0, 120A, 1200V, 0.0223?, Automotive
DIW120SIC022-AQ
Diotec Semiconductor
1:
68,52 €
448 Prieinamumas
„Mouser“ Dalies Nr.
637-DIW120SIC022-AQ
Diotec Semiconductor
SiC MOSFET SiC MOSFET, TO-247-3L, 0, 120A, 1200V, 0.0223?, Automotive
448 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
1 Channel
1.2 kV
120 A
22.3 mOhms
- 4 V, + 18 V
4 V
269 nC
- 55 C
+ 175 C
340 W
Enhancement
DIW120SIC022-AQ
SiC MOSFET
DIW120SIC023-AQ
Diotec Semiconductor
1:
72,84 €
661 Prieinamumas
„Mouser“ Dalies Nr.
637-DIW120SIC023-AQ
Diotec Semiconductor
SiC MOSFET
661 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
1 Channel
1.2 kV
125 A
23 mOhms
- 4 V, + 18 V
2.9 V
121 nC
- 55 C
+ 175 C
600 W
Enhancement
SiC MOSFET
DIW120SIC059-AQ
Diotec Semiconductor
1:
22,32 €
445 Prieinamumas
„Mouser“ Dalies Nr.
637-DIW120SIC059-AQ
Diotec Semiconductor
SiC MOSFET
445 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
1 Channel
1.2 kV
65 A
53 mOhms
- 4 V, + 18 V
4 V
121 nC
- 55 C
+ 175 C
278 W
Enhancement