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|
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
- SQJ858AEP-T1_NE3
- Vishay Semiconductors
-
1:
1,58 €
-
1 601Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
78-SQJ858AEP-T1_NE3
Naujas Produktas
|
Vishay Semiconductors
|
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
|
|
1 601Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 3 000
|
|
|
|
|
Gate Tvarkyklės DUAL 5 A HIGH SPEED LOW-SIDE MOSFET DRIVERS WITH ENABLE FOR AUTOMOTIVE (AECQ100 GRADE 1)
- NCV81071AZR2G
- onsemi
-
1:
1,53 €
-
2 198Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-NCV81071AZR2G
Naujas Produktas
|
onsemi
|
Gate Tvarkyklės DUAL 5 A HIGH SPEED LOW-SIDE MOSFET DRIVERS WITH ENABLE FOR AUTOMOTIVE (AECQ100 GRADE 1)
|
|
2 198Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 300
:
3 000
|
|
|
|
|
MOSFETs 30V Vds 20V Vgs TSOP-6
- SI3424CDV-T1-GE3
- Vishay Semiconductors
-
1:
0,602 €
-
347 967Prieinamumas
|
„Mouser“ Dalies Nr.
78-SI3424CDV-T1-GE3
|
Vishay Semiconductors
|
MOSFETs 30V Vds 20V Vgs TSOP-6
|
|
347 967Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs N-CH 650V 10A TO-252
- XP65SL380DH
- YAGEO XSemi
-
1:
2,06 €
-
2 999Prieinamumas
|
„Mouser“ Dalies Nr.
603-XP65SL380DH
|
YAGEO XSemi
|
MOSFETs N-CH 650V 10A TO-252
|
|
2 999Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs TSON N-CH 60V 20A
- XPN12006NC,L1XHQ
- Toshiba
-
1:
1,63 €
-
56 440Prieinamumas
|
„Mouser“ Dalies Nr.
757-XPN12006NCL1XHQ
|
Toshiba
|
MOSFETs TSON N-CH 60V 20A
|
|
56 440Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
5 000
|
|
|
|
|
MOSFETs 30V Vds +/-12V Vgs AEC-Q101 Qualified
- SQ1470AEH-T1_GE3
- Vishay Semiconductors
-
1:
0,791 €
-
201 379Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ1470AEH-T1_GE3
|
Vishay Semiconductors
|
MOSFETs 30V Vds +/-12V Vgs AEC-Q101 Qualified
|
|
201 379Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Gate Tvarkyklės DUAL NON INVERT DRVR 8P SOIC Input CMOS
- IX4427N
- IXYS Integrated Circuits
-
1:
1,03 €
-
30 816Prieinamumas
|
„Mouser“ Dalies Nr.
849-IX4427N
|
IXYS Integrated Circuits
|
Gate Tvarkyklės DUAL NON INVERT DRVR 8P SOIC Input CMOS
|
|
30 816Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs -20V P-Channel 2.5V PowerTrench MOSFET
- FDC608PZ
- onsemi
-
1:
0,817 €
-
139 851Prieinamumas
|
„Mouser“ Dalies Nr.
512-FDC608PZ
|
onsemi
|
MOSFETs -20V P-Channel 2.5V PowerTrench MOSFET
|
|
139 851Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 3 000
:
3 000
|
|
|
|
|
MOSFET moduliai MBLOC 150V 400A N-CH X4CLASS
- IXTN400N15X4
- IXYS
-
1:
46,81 €
-
344Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXTN400N15X4
|
IXYS
|
MOSFET moduliai MBLOC 150V 400A N-CH X4CLASS
|
|
344Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs -30V Vds; +/-25V Vgs PowerPAK 1212-8SH
- SISH101DN-T1-GE3
- Vishay Semiconductors
-
1:
1,31 €
-
45 416Prieinamumas
|
„Mouser“ Dalies Nr.
78-SISH101DN-T1-GE3
|
Vishay Semiconductors
|
MOSFETs -30V Vds; +/-25V Vgs PowerPAK 1212-8SH
|
|
45 416Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Gate Tvarkyklės SIC MOSFET DRIVER
- NCP51705MNTXG
- onsemi
-
1:
4,14 €
-
9 769Prieinamumas
|
„Mouser“ Dalies Nr.
863-NCP51705MNTXG
|
onsemi
|
Gate Tvarkyklės SIC MOSFET DRIVER
|
|
9 769Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 3 000
:
3 000
|
|
|
|
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
16,94 €
-
174Prieinamumas
|
„Mouser“ Dalies Nr.
511-SH63N65DM6AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
174Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
200
|
|
|
|
|
MOSFETs SOT23 P-CH 30V 4.2A
- SI2343CDS-T1-BE3
- Vishay / Siliconix
-
1:
0,817 €
-
130 228Prieinamumas
|
„Mouser“ Dalies Nr.
78-SI2343CDS-T1-BE3
|
Vishay / Siliconix
|
MOSFETs SOT23 P-CH 30V 4.2A
|
|
130 228Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs N-CHANNEL 60V
- SQS460EN-T1_BE3
- Vishay Semiconductors
-
1:
1,69 €
-
29 229Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQS460EN-T1_BE3
|
Vishay Semiconductors
|
MOSFETs N-CHANNEL 60V
|
|
29 229Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFET moduliai 500V 112A 0.039Ohm PolarP3 Power MOSFET
- IXFN132N50P3
- IXYS
-
1:
43,51 €
-
414Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXFN132N50P3
|
IXYS
|
MOSFET moduliai 500V 112A 0.039Ohm PolarP3 Power MOSFET
|
|
414Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs TO264 150V 400A N-CH 4CLASS
- IXTK400N15X4
- IXYS
-
1:
59,82 €
-
1 487Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXTK400N15X4
|
IXYS
|
MOSFETs TO264 150V 400A N-CH 4CLASS
|
|
1 487Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs P-CHANNEL 60 V
- SQ9407EY-T1_BE3
- Vishay Semiconductors
-
1:
1,58 €
-
61 081Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ9407EY-T1_BE3
|
Vishay Semiconductors
|
MOSFETs P-CHANNEL 60 V
|
|
61 081Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Dual N-Ch 40V AEC-Q101 Qualified
- SQJ868EP-T1_GE3
- Vishay / Siliconix
-
1:
1,69 €
-
50 752Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQJ868EP-T1_GE3
|
Vishay / Siliconix
|
MOSFETs Dual N-Ch 40V AEC-Q101 Qualified
|
|
50 752Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 60V 50A 136W AEC-Q101 Qualified
- SQD50N06-09L_GE3
- Vishay Semiconductors
-
1:
5,38 €
-
28 903Prieinamumas
|
„Mouser“ Dalies Nr.
781-SQD50N06-09L_GE3
|
Vishay Semiconductors
|
MOSFETs 60V 50A 136W AEC-Q101 Qualified
|
|
28 903Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
MOSFETs Dual P-Channel 60V AEC-Q101 Qualified
- SQ4961EY-T1_GE3
- Vishay / Siliconix
-
1:
2,01 €
-
22 029Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ4961EY-T1_GE3
|
Vishay / Siliconix
|
MOSFETs Dual P-Channel 60V AEC-Q101 Qualified
|
|
22 029Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs N-CHANNEL 20-V (D-S) 175C AEC-Q101
- SQA446CEJW-T1_GE3
- Vishay Semiconductors
-
1:
0,817 €
-
84 047Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQA446CEJW-T1_GE3
|
Vishay Semiconductors
|
MOSFETs N-CHANNEL 20-V (D-S) 175C AEC-Q101
|
|
84 047Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 3 000
:
3 000
|
|
|
|
|
MOSFETs 60V Vds -/+20V Vgs AEC-Q101 Qualified
- SQS460ENW-T1_GE3
- Vishay Semiconductors
-
1:
1,69 €
-
30 181Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQS460ENW-T1_GE3
|
Vishay Semiconductors
|
MOSFETs 60V Vds -/+20V Vgs AEC-Q101 Qualified
|
|
30 181Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Gate Tvarkyklės 1 INVRT, 1 NON INVRT 8P SOIC Input CMOS
- IX4428NTR
- IXYS Integrated Circuits
-
1:
0,963 €
-
70 700Prieinamumas
|
„Mouser“ Dalies Nr.
849-IX4428NTR
|
IXYS Integrated Circuits
|
Gate Tvarkyklės 1 INVRT, 1 NON INVRT 8P SOIC Input CMOS
|
|
70 700Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
MOSFETs 80V 4.8mOhm@10V 60A N-Ch MV T-FET
- SIR826DP-T1-GE3
- Vishay Semiconductors
-
1:
3,34 €
-
11 660Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIR826DP-T1-GE3
|
Vishay Semiconductors
|
MOSFETs 80V 4.8mOhm@10V 60A N-Ch MV T-FET
|
|
11 660Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 3 000
:
3 000
|
|
|
|
|
MOSFETs Dual P-Chnl 30-V D-S AEC-Q101 Qualified
- SQ4949EY-T1_GE3
- Vishay Semiconductors
-
1:
2,15 €
-
31 270Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ4949EY-T1_GE3
|
Vishay Semiconductors
|
MOSFETs Dual P-Chnl 30-V D-S AEC-Q101 Qualified
|
|
31 270Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|