|
|
MOSFETs N-Channel 55V AEC-Q101 Qualified
- SQD30N05-20L_GE3
- Vishay Semiconductors
-
1:
2,01 €
-
30 676Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQD30N05-20L_GE3
|
Vishay Semiconductors
|
MOSFETs N-Channel 55V AEC-Q101 Qualified
|
|
30 676Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
MOSFETs Dual N-Ch 40V AEC-Q101 Qualified
- SQJ868EP-T1_GE3
- Vishay / Siliconix
-
1:
1,69 €
-
50 752Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQJ868EP-T1_GE3
|
Vishay / Siliconix
|
MOSFETs Dual N-Ch 40V AEC-Q101 Qualified
|
|
50 752Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
- SQJA38EP-T1_GE3
- Vishay / Siliconix
-
1:
1,56 €
-
52 049Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQJA38EP-T1_GE3
|
Vishay / Siliconix
|
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
|
|
52 049Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Lygintuvai 600V 15A TO-220 Fred Pt
- VS-15ETL06-M3
- Vishay Semiconductors
-
1:
3,57 €
-
15 564Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-15ETL06-M3
|
Vishay Semiconductors
|
Lygintuvai 600V 15A TO-220 Fred Pt
|
|
15 564Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 20V Vds 12V Vgs PowerPAK 1212-8
- SI7106DN-T1-GE3
- Vishay Semiconductors
-
1:
2,67 €
-
3 000Turimos Atsargos
|
„Mouser“ Dalies Nr.
781-SI7106DN-T1-GE3
|
Vishay Semiconductors
|
MOSFETs 20V Vds 12V Vgs PowerPAK 1212-8
|
|
3 000Turimos Atsargos
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 60V 50A 136W AEC-Q101 Qualified
- SQD50N06-09L_GE3
- Vishay Semiconductors
-
1:
5,38 €
-
28 903Prieinamumas
|
„Mouser“ Dalies Nr.
781-SQD50N06-09L_GE3
|
Vishay Semiconductors
|
MOSFETs 60V 50A 136W AEC-Q101 Qualified
|
|
28 903Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
MOSFETs TO263 100V 28A N-CH MOSFET
- IRF540STRLPBF
- Vishay Semiconductors
-
1:
2,73 €
-
18 563Prieinamumas
|
„Mouser“ Dalies Nr.
844-IRF540STRLPBF
|
Vishay Semiconductors
|
MOSFETs TO263 100V 28A N-CH MOSFET
|
|
18 563Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
|
|
IGBT 650V40A FS4 IGBT TO-247LL
- AFGHL40T65SQD
- onsemi
-
1:
6,55 €
-
6 377Prieinamumas
|
„Mouser“ Dalies Nr.
863-AFGHL40T65SQD
|
onsemi
|
IGBT 650V40A FS4 IGBT TO-247LL
|
|
6 377Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 1200V 10A AUTO SIC SBD
- FFSH10120A-F085
- onsemi
-
1:
8,68 €
-
3 444Prieinamumas
|
„Mouser“ Dalies Nr.
863-FFSH10120A-F085
|
onsemi
|
SiC SCHOTTKY diodai 1200V 10A AUTO SIC SBD
|
|
3 444Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs SUPERFET3 650V
- NTHL110N65S3F
- onsemi
-
1:
9,06 €
-
9 449Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTHL110N65S3F
|
onsemi
|
MOSFETs SUPERFET3 650V
|
|
9 449Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs AFSM T6 40V LL NCH
- NVMTS0D4N04CLTXG
- onsemi
-
1:
11,00 €
-
15 174Prieinamumas
|
„Mouser“ Dalies Nr.
863-NVMTS0D4N04CLTXG
|
onsemi
|
MOSFETs AFSM T6 40V LL NCH
|
|
15 174Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 3 000
:
3 000
|
|
|
|
|
MOSFETs N-Ch 60V 1.1mOhm 200nC 2.9V Hexfet
- IRF7749L1TRPBF
- Infineon Technologies
-
1:
6,45 €
-
33 604Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
942-IRF7749L1TRPBF
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 60V 1.1mOhm 200nC 2.9V Hexfet
|
|
33 604Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
4 000
|
|
|
|
|
MOSFETs 600V, 52A, 72mOhm N-Channel Mosfet
- FCH072N60F
- onsemi
-
1:
10,29 €
-
7 651Prieinamumas
|
„Mouser“ Dalies Nr.
512-FCH072N60F
|
onsemi
|
MOSFETs 600V, 52A, 72mOhm N-Channel Mosfet
|
|
7 651Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 450
|
|
|
|
|
MOSFETs -20V P-Channel 2.5V PowerTrench MOSFET
- FDC608PZ
- onsemi
-
1:
0,817 €
-
139 849Prieinamumas
|
„Mouser“ Dalies Nr.
512-FDC608PZ
|
onsemi
|
MOSFETs -20V P-Channel 2.5V PowerTrench MOSFET
|
|
139 849Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 3 000
:
3 000
|
|
|
|
|
MOSFETs 200V NChannel UniFET
- FDD18N20LZ
- onsemi
-
1:
2,69 €
-
49 696Prieinamumas
|
„Mouser“ Dalies Nr.
512-FDD18N20LZ
|
onsemi
|
MOSFETs 200V NChannel UniFET
|
|
49 696Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 500
:
2 500
|
|
|
|
|
MOSFETs 100V N-Channel PowerTrench
- FDD86102
- onsemi
-
1:
2,52 €
-
18 610Prieinamumas
|
„Mouser“ Dalies Nr.
512-FDD86102
|
onsemi
|
MOSFETs 100V N-Channel PowerTrench
|
|
18 610Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 500
:
2 500
|
|
|
|
|
MOSFETs 30V/20V N-Ch PowerTrench SyncFET
- FDMS7678
- onsemi
-
1:
1,21 €
-
70 572Prieinamumas
|
„Mouser“ Dalies Nr.
512-FDMS7678
|
onsemi
|
MOSFETs 30V/20V N-Ch PowerTrench SyncFET
|
|
70 572Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
IGBT EcoSPARK2 300mJ 400V N-Chan Ignition IGB
- FGD3040G2-F085
- onsemi
-
1:
2,33 €
-
25 030Prieinamumas
|
„Mouser“ Dalies Nr.
512-FGD3040G2_F085
|
onsemi
|
IGBT EcoSPARK2 300mJ 400V N-Chan Ignition IGB
|
|
25 030Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 500
:
2 500
|
|
|
|
|
IGBT 600V/60A Field Stop IGBT ver. 2
- FGH60N60SMD
- onsemi
-
1:
6,99 €
-
6 855Prieinamumas
|
„Mouser“ Dalies Nr.
512-FGH60N60SMD
|
onsemi
|
IGBT 600V/60A Field Stop IGBT ver. 2
|
|
6 855Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 450
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 2a/30V Schottky
- SS23
- onsemi
-
1:
0,628 €
-
114 857Prieinamumas
|
„Mouser“ Dalies Nr.
512-SS23
|
onsemi
|
SCHOTTKY Diodes ir Lygintuvai 2a/30V Schottky
|
|
114 857Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs MOSFETBVDSS: 41V-60V
- DMP6180SK3Q-13
- Diodes Incorporated
-
1:
1,14 €
-
83 060Prieinamumas
|
„Mouser“ Dalies Nr.
621-DMP6180SK3Q-13
|
Diodes Incorporated
|
MOSFETs MOSFETBVDSS: 41V-60V
|
|
83 060Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 500
:
2 500
|
|
|
|
|
Lygintuvai 2.5 Amp 1500 Volt
- BY228GP-E3/54
- Vishay Semiconductors
-
1:
3,71 €
-
17 609Prieinamumas
|
„Mouser“ Dalies Nr.
625-BY228GP-E3
|
Vishay Semiconductors
|
Lygintuvai 2.5 Amp 1500 Volt
|
|
17 609Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 400
|
|
|
|
|
IGBT 75 Amps 1200V
- IXDN75N120
- IXYS
-
1:
42,80 €
-
1 279Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXDN75N120
|
IXYS
|
IGBT 75 Amps 1200V
|
|
1 279Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 10 Amps 800V 1.1 Rds
- IXFA10N80P
- IXYS
-
1:
5,67 €
-
8 779Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXFA10N80P
|
IXYS
|
MOSFETs 10 Amps 800V 1.1 Rds
|
|
8 779Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai 200 Amps 100V 0.0075 Rds
- IXFN200N10P
- IXYS
-
1:
28,54 €
-
1 264Prieinamumas
-
650Tikėtina 2026-11-05
|
„Mouser“ Dalies Nr.
747-IXFN200N10P
|
IXYS
|
MOSFET moduliai 200 Amps 100V 0.0075 Rds
|
|
1 264Prieinamumas
650Tikėtina 2026-11-05
|
|
Min.: 1
Daugkart.: 1
|
|
|