|
|
MOSFETs IFX FET 60V
- IPB015N06NF2SATMA1
- Infineon Technologies
-
1:
4,90 €
-
2 057Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB015N06NF2SATM
|
Infineon Technologies
|
MOSFETs IFX FET 60V
|
|
2 057Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
|
|
MOSFETs TO220 650V 165A N-CH MOSFET
- R6055VNXC7G
- ROHM Semiconductor
-
1:
8,09 €
-
1 985Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6055VNXC7G
|
ROHM Semiconductor
|
MOSFETs TO220 650V 165A N-CH MOSFET
|
|
1 985Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs HSMT8 150V 25A N-CH
- RH6R025BHTB1
- ROHM Semiconductor
-
1:
2,41 €
-
5 433Prieinamumas
|
„Mouser“ Dalies Nr.
755-RH6R025BHTB1
|
ROHM Semiconductor
|
MOSFETs HSMT8 150V 25A N-CH
|
|
5 433Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs HSMT8 N-CH 60V 20A
- RQ3L070BGTB1
- ROHM Semiconductor
-
1:
1,36 €
-
4 193Prieinamumas
|
„Mouser“ Dalies Nr.
755-RQ3L070BGTB1
|
ROHM Semiconductor
|
MOSFETs HSMT8 N-CH 60V 20A
|
|
4 193Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs HS0P8 100V 60A N CHAN
- RS6P060BHTB1
- ROHM Semiconductor
-
1:
2,76 €
-
4 000Prieinamumas
|
„Mouser“ Dalies Nr.
755-RS6P060BHTB1
|
ROHM Semiconductor
|
MOSFETs HS0P8 100V 60A N CHAN
|
|
4 000Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs HSMT8 150V 35A N CHAN
- RS6R035BHTB1
- ROHM Semiconductor
-
1:
2,81 €
-
4 873Prieinamumas
|
„Mouser“ Dalies Nr.
755-RS6R035BHTB1
|
ROHM Semiconductor
|
MOSFETs HSMT8 150V 35A N CHAN
|
|
4 873Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 70A(Id), (4.5V Drive)
- RX3L07BBGC16
- ROHM Semiconductor
-
1:
4,11 €
-
1 889Prieinamumas
|
„Mouser“ Dalies Nr.
755-RX3L07BBGC16
|
ROHM Semiconductor
|
MOSFETs Transistor, MOSFET Nch, 60V(Vdss), 70A(Id), (4.5V Drive)
|
|
1 889Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs Transistor, MOSFET Nch, 150V(Vdss), 50A(Id), (6.0V, 10V Drive)
- RX3R05BBHC16
- ROHM Semiconductor
-
1:
4,52 €
-
1 796Prieinamumas
|
„Mouser“ Dalies Nr.
755-RX3R05BBHC16
|
ROHM Semiconductor
|
MOSFETs Transistor, MOSFET Nch, 150V(Vdss), 50A(Id), (6.0V, 10V Drive)
|
|
1 796Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Vienspalviai šviesos diodai Blue InGaN LED, 3.2V, 20mA, 2-Pin SMD
- SMLS14BNTT68
- ROHM Semiconductor
-
1:
1,09 €
-
8 168Prieinamumas
|
„Mouser“ Dalies Nr.
755-SMLS14BNTT68
|
ROHM Semiconductor
|
Vienspalviai šviesos diodai Blue InGaN LED, 3.2V, 20mA, 2-Pin SMD
|
|
8 168Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
Lygintuvai 8A, 600V, STD RECT , SMC
- S8J-E3/I
- Vishay Semiconductors
-
1:
0,946 €
-
12 810Prieinamumas
|
„Mouser“ Dalies Nr.
78-S8J-E3/I
|
Vishay Semiconductors
|
Lygintuvai 8A, 600V, STD RECT , SMC
|
|
12 810Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 500
|
|
|
|
|
Lygintuvai 8A, 1000V, STD RECT , SMC
- S8MS-E3/I
- Vishay Semiconductors
-
1:
0,894 €
-
11 770Prieinamumas
|
„Mouser“ Dalies Nr.
78-S8MS-E3/I
|
Vishay Semiconductors
|
Lygintuvai 8A, 1000V, STD RECT , SMC
|
|
11 770Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 500
|
|
|
|
|
MOSFETs P-Channel 80 V (D-S) MOSFET
- SIJ4819DP-T1-GE3
- Vishay / Siliconix
-
1:
2,81 €
-
12 579Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIJ4819DP-T1-GE3
|
Vishay / Siliconix
|
MOSFETs P-Channel 80 V (D-S) MOSFET
|
|
12 579Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 6 000
:
3 000
|
|
|
|
|
SiC SCHOTTKY diodai SIC-G3-SLIMDPAK 2L
- VS-3C08EV07T-M3/I
- Vishay Semiconductors
-
1:
3,41 €
-
8 492Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-3C08EV07T-M3/I
|
Vishay Semiconductors
|
SiC SCHOTTKY diodai SIC-G3-SLIMDPAK 2L
|
|
8 492Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
4 500
|
|
|
|
|
SiC SCHOTTKY diodai RECT 650V 16A SM POWER SIC
- VS-3C16ET07S2L-M3
- Vishay Semiconductors
-
1:
3,97 €
-
1 006Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-3C16ET07S2L-M3
|
Vishay Semiconductors
|
SiC SCHOTTKY diodai RECT 650V 16A SM POWER SIC
|
|
1 006Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
|
|
SiC SCHOTTKY diodai RECT 650V 20A RDL POWER SIC
- VS-3C20ET07T-M3
- Vishay Semiconductors
-
1:
6,11 €
-
775Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-3C20ET07T-M3
|
Vishay Semiconductors
|
SiC SCHOTTKY diodai RECT 650V 20A RDL POWER SIC
|
|
775Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 600V NCH FRFET
- FCB20N60FTM
- onsemi
-
1:
6,62 €
-
8 826Prieinamumas
|
„Mouser“ Dalies Nr.
512-FCB20N60FTM
|
onsemi
|
MOSFETs 600V NCH FRFET
|
|
8 826Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 800
:
800
|
|
|
|
|
MOSFETs SuperFET3 650V 67 mOhm
- FCPF067N65S3
- onsemi
-
1:
8,19 €
-
4 441Prieinamumas
|
„Mouser“ Dalies Nr.
512-FCPF067N65S3
|
onsemi
|
MOSFETs SuperFET3 650V 67 mOhm
|
|
4 441Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 80V, 300A, 1.1 mO, TO-LL N-Channel PowerTrench
- FDBL86361-F085
- onsemi
-
1:
6,82 €
-
8 686Prieinamumas
|
„Mouser“ Dalies Nr.
512-FDBL86361F085
|
onsemi
|
MOSFETs 80V, 300A, 1.1 mO, TO-LL<BR>N-Channel PowerTrench
|
|
8 686Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 000
:
2 000
|
|
|
|
|
MOSFETs 600V N-Channel Adv Q-FET C-Series
- FQD5N60CTM
- onsemi
-
1:
1,96 €
-
43 372Prieinamumas
|
„Mouser“ Dalies Nr.
512-FQD5N60CTM
|
onsemi
|
MOSFETs 600V N-Channel Adv Q-FET C-Series
|
|
43 372Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 500
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 1a 80V Rectifier Schottky Barrier
- SS18
- onsemi
-
1:
0,671 €
-
222 572Prieinamumas
|
„Mouser“ Dalies Nr.
512-SS18
|
onsemi
|
SCHOTTKY Diodes ir Lygintuvai 1a 80V Rectifier Schottky Barrier
|
|
222 572Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 7 500
:
7 500
|
|
|
|
|
Lygintuvai 3.0A 200V
- MURS320-13-F
- Diodes Incorporated
-
1:
0,92 €
-
206 707Prieinamumas
|
„Mouser“ Dalies Nr.
621-MURS320-13-F
|
Diodes Incorporated
|
Lygintuvai 3.0A 200V
|
|
206 707Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 500
:
3 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 3.0 Amp 40 Volt
- B340A-E3/61T
- Vishay Semiconductors
-
1:
0,55 €
-
282 392Prieinamumas
|
„Mouser“ Dalies Nr.
625-BD340A-E3/61T
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai 3.0 Amp 40 Volt
|
|
282 392Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 800
|
|
|
|
|
IGBT IGBT Discrete 600V, 5A in TO-252
- BIDD05N60T
- Bourns
-
1:
1,92 €
-
24 136Prieinamumas
|
„Mouser“ Dalies Nr.
652-BIDD05N60T
|
Bourns
|
IGBT IGBT Discrete 600V, 5A in TO-252
|
|
24 136Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs IFX FET >100-150V
- IPB048N15N5ATMA1
- Infineon Technologies
-
1:
6,31 €
-
5 796Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB048N15N5ATMA1
|
Infineon Technologies
|
MOSFETs IFX FET >100-150V
|
|
5 796Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
MOSFETs ISOPLUS N-CH 75V 120A
- FMM150-0075X2F
- IXYS
-
1:
25,21 €
-
2 211Prieinamumas
|
„Mouser“ Dalies Nr.
747-FMM150-0075X2F
|
IXYS
|
MOSFETs ISOPLUS N-CH 75V 120A
|
|
2 211Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|