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SiC MOSFET SIC MOSFET 900V TO247-4L 20MOHM
- NTH4L020N090SC1
- onsemi
-
1:
23,54 €
-
2 205Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTH4L020N090SC1
|
onsemi
|
SiC MOSFET SIC MOSFET 900V TO247-4L 20MOHM
|
|
2 205Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
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MOSFETs NFET SO8FL 30V 69A 4MOHM
- NTMFS4C06NT1G
- onsemi
-
1:
0,998 €
-
67 441Prieinamumas
|
„Mouser“ Dalies Nr.
863-NTMFS4C06NT1G
|
onsemi
|
MOSFETs NFET SO8FL 30V 69A 4MOHM
|
|
67 441Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 1 500
:
1 500
|
|
|
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MOSFETs MOSFT 55V 98A 8mOhm 97.3nC
- IRF3205PBF
- Infineon Technologies
-
1:
1,79 €
-
68 560Prieinamumas
|
„Mouser“ Dalies Nr.
942-IRF3205PBF
|
Infineon Technologies
|
MOSFETs MOSFT 55V 98A 8mOhm 97.3nC
|
|
68 560Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
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MOSFETs 30V P-Channel Enhancement Mode MOSFET
- PJQ4431EP-AU_R2_002A1
- Panjit
-
1:
1,14 €
-
3 929Prieinamumas
|
„Mouser“ Dalies Nr.
241-PJQ4431EP-AUR22A
|
Panjit
|
MOSFETs 30V P-Channel Enhancement Mode MOSFET
|
|
3 929Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
5 000
|
|
|
|
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SCHOTTKY Diodes ir Lygintuvai 100 V, 5 A Power Schottky Trench Rectifier
- STPST5H100SF
- STMicroelectronics
-
1:
0,774 €
-
11 015Prieinamumas
|
„Mouser“ Dalies Nr.
511-STPST5H100SF
|
STMicroelectronics
|
SCHOTTKY Diodes ir Lygintuvai 100 V, 5 A Power Schottky Trench Rectifier
|
|
11 015Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
6 000
|
|
|
|
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SCHOTTKY Diodes ir Lygintuvai 3A, 100V, DFN3820A TRENCH SKY RECT.
- V3NM103HM3/I
- Vishay Semiconductors
-
1:
0,74 €
-
23 819Prieinamumas
|
„Mouser“ Dalies Nr.
625-V3NM103HM3/I
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai 3A, 100V, DFN3820A TRENCH SKY RECT.
|
|
23 819Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
14 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 5A, 60V, DFN3820A TRENCH SKY RECT.
- V5NL63-M3/I
- Vishay Semiconductors
-
1:
0,722 €
-
15 526Prieinamumas
|
„Mouser“ Dalies Nr.
625-V5NL63-M3/I
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai 5A, 60V, DFN3820A TRENCH SKY RECT.
|
|
15 526Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
14 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 5A, 60V, DFN3820A TRENCH SKY RECT.
- V5NL63HM3/I
- Vishay Semiconductors
-
1:
0,843 €
-
27 275Prieinamumas
|
„Mouser“ Dalies Nr.
625-V5NL63HM3/I
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai 5A, 60V, DFN3820A TRENCH SKY RECT.
|
|
27 275Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
14 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 5A, 100V, DFN3820A TRENCH SKY RECT.
- V5NM103-M3/I
- Vishay Semiconductors
-
1:
0,731 €
-
25 722Prieinamumas
|
„Mouser“ Dalies Nr.
625-V5NM103-M3/I
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai 5A, 100V, DFN3820A TRENCH SKY RECT.
|
|
25 722Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
14 000
|
|
|
|
|
SiC MOSFET SIC_DISCRETE
- AIMBG120R080M1XTMA1
- Infineon Technologies
-
1:
8,02 €
-
1 985Prieinamumas
|
„Mouser“ Dalies Nr.
726-AIMBG120R080M1X1
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
1 985Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
MOSFETs TO220 650V 42A N-CH MOSFET
- R6014YNX3C16
- ROHM Semiconductor
-
1:
4,08 €
-
871Prieinamumas
|
„Mouser“ Dalies Nr.
755-R6014YNX3C16
|
ROHM Semiconductor
|
MOSFETs TO220 650V 42A N-CH MOSFET
|
|
871Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs Transistor, MOSFET Nch, 100V(Vdss), 105A(Id), (6.0V, 10V Drive)
- RX3P10BBHC16
- ROHM Semiconductor
-
1:
7,84 €
-
1 809Prieinamumas
|
„Mouser“ Dalies Nr.
755-RX3P10BBHC16
|
ROHM Semiconductor
|
MOSFETs Transistor, MOSFET Nch, 100V(Vdss), 105A(Id), (6.0V, 10V Drive)
|
|
1 809Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET TO247 1.2KV 31A N-CH SIC
- SCT3080KRC15
- ROHM Semiconductor
-
1:
12,83 €
-
491Prieinamumas
|
„Mouser“ Dalies Nr.
755-SCT3080KRC15
|
ROHM Semiconductor
|
SiC MOSFET TO247 1.2KV 31A N-CH SIC
|
|
491Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Vienspalviai šviesos diodai LED, Blue, 126mW, 20mA, 3.2V, Circular, Through-Hole
- SLR343BN2T3F
- ROHM Semiconductor
-
1:
1,04 €
-
3 642Prieinamumas
|
„Mouser“ Dalies Nr.
755-SLR343BN2T3F
|
ROHM Semiconductor
|
Vienspalviai šviesos diodai LED, Blue, 126mW, 20mA, 3.2V, Circular, Through-Hole
|
|
3 642Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Balti šviesos diodai White Surface Mount Chip LEDs with reflector and built-in protection diode featuring InGaN packed with resin containing phosphor.
- SMLK28WBNCW1
- ROHM Semiconductor
-
1:
1,86 €
-
5 970Prieinamumas
|
„Mouser“ Dalies Nr.
755-SMLK28WBNCW1
|
ROHM Semiconductor
|
Balti šviesos diodai White Surface Mount Chip LEDs with reflector and built-in protection diode featuring InGaN packed with resin containing phosphor.
|
|
5 970Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
Lygintuvai 8A, 400V, STD RECT, SMC
- S8G-E3/I
- Vishay Semiconductors
-
1:
0,946 €
-
9 220Prieinamumas
|
„Mouser“ Dalies Nr.
78-S8G-E3/I
|
Vishay Semiconductors
|
Lygintuvai 8A, 400V, STD RECT, SMC
|
|
9 220Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 500
|
|
|
|
|
Lygintuvai 8A, 400V, STD RECT, SMC
- S8GS-E3/I
- Vishay Semiconductors
-
1:
0,894 €
-
10 716Prieinamumas
|
„Mouser“ Dalies Nr.
78-S8GS-E3/I
|
Vishay Semiconductors
|
Lygintuvai 8A, 400V, STD RECT, SMC
|
|
10 716Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 500
|
|
|
|
|
Lygintuvai 8A, 800V, STD RECT, SMC
- S8K-E3/I
- Vishay Semiconductors
-
1:
0,946 €
-
12 426Prieinamumas
|
„Mouser“ Dalies Nr.
78-S8K-E3/I
|
Vishay Semiconductors
|
Lygintuvai 8A, 800V, STD RECT, SMC
|
|
12 426Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 500
|
|
|
|
|
Lygintuvai 8A, 1000V, STD RECT , SMC
- S8M-E3/I
- Vishay Semiconductors
-
1:
0,946 €
-
13 162Prieinamumas
|
„Mouser“ Dalies Nr.
78-S8M-E3/I
|
Vishay Semiconductors
|
Lygintuvai 8A, 1000V, STD RECT , SMC
|
|
13 162Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 500
|
|
|
|
|
MOSFETs 600V, 52A, 72mOhm N-Channel Mosfet
- FCH072N60F
- onsemi
-
1:
10,29 €
-
7 648Prieinamumas
|
„Mouser“ Dalies Nr.
512-FCH072N60F
|
onsemi
|
MOSFETs 600V, 52A, 72mOhm N-Channel Mosfet
|
|
7 648Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 450
|
|
|
|
|
MOSFETs -20V P-Channel 2.5V PowerTrench MOSFET
- FDC608PZ
- onsemi
-
1:
0,817 €
-
139 851Prieinamumas
|
„Mouser“ Dalies Nr.
512-FDC608PZ
|
onsemi
|
MOSFETs -20V P-Channel 2.5V PowerTrench MOSFET
|
|
139 851Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 3 000
:
3 000
|
|
|
|
|
MOSFETs 200V NChannel UniFET
- FDD18N20LZ
- onsemi
-
1:
2,69 €
-
49 699Prieinamumas
|
„Mouser“ Dalies Nr.
512-FDD18N20LZ
|
onsemi
|
MOSFETs 200V NChannel UniFET
|
|
49 699Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 500
:
2 500
|
|
|
|
|
MOSFETs 100V N-Channel PowerTrench
- FDD86102
- onsemi
-
1:
2,52 €
-
18 610Prieinamumas
|
„Mouser“ Dalies Nr.
512-FDD86102
|
onsemi
|
MOSFETs 100V N-Channel PowerTrench
|
|
18 610Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 500
:
2 500
|
|
|
|
|
MOSFETs 30V/20V N-Ch PowerTrench SyncFET
- FDMS7678
- onsemi
-
1:
1,21 €
-
70 572Prieinamumas
|
„Mouser“ Dalies Nr.
512-FDMS7678
|
onsemi
|
MOSFETs 30V/20V N-Ch PowerTrench SyncFET
|
|
70 572Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
IGBT EcoSPARK2 300mJ 400V N-Chan Ignition IGB
- FGD3040G2-F085
- onsemi
-
1:
2,33 €
-
25 030Prieinamumas
|
„Mouser“ Dalies Nr.
512-FGD3040G2_F085
|
onsemi
|
IGBT EcoSPARK2 300mJ 400V N-Chan Ignition IGB
|
|
25 030Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 500
:
2 500
|
|
|