GeneSiC Semiconductor GB01SLT Silicon Carbide Power Schottky Diodes

GeneSic Semiconductors GB01SLT Silicon Carbide (SiC) Schottky Diodes offer low standby power/switching losses, low leakage/recovery currents, and superior surge current capability. The GB01SLT SiC Schottky Diodes also provide extremely fast switching speeds and low device capacitance. Housed in a compact package, the 650V and 1200V diodes operate in a temperature range from -55°C to 175°C. The diodes supply a zero reverse current that does not change with the temperature. GB01SLT's exceptional switching characteristics allow the elimination or dramatic reduction of voltage balancing networks and snubber circuits. Applications include solar/wind turbine inverters, induction heating, motor drives, switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), power factor correction (PFC), and high voltage multipliers.